AUIRFP4310Z
G D S
Gate Drain Source
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRFP4310Z TO-247AC Tube 25 AUIRFP4310Z
VDSS 100V
RDS(on) typ. 4.8m
max. 6.0m
ID (Silicon Limited) 128A
ID (Package Limited) 120A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
1 2015-9-29
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
TO-247AC
D S
G
D
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 128
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 90
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 120
IDM Pulsed Drain Current 480
PD @TC = 25°C Maximum Power Dissipation 278 W
Linear Derating Factor 1.9 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 355
mJ
IAR Avalanche Current See Fig.14,15, 22a, 22b A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery 17 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.54
°C/W
RCS Case-to-Sink, Flat, Greased Surface 0.24 –––
RJA Junction-to-Ambient ––– 40