IXFH12N100P - IXYS - Datasheet.Live

VDSS = 1000V

ID25 = 12A

RDS(on) ≤≤

≤≤

≤ 1.05ΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 1000 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V

VGSS Continuous ± 30 V

VGSM Transient ± 40 V

ID25 TC= 25°C12A

IDM TC= 25°C, Pulse Width Limited by TJM 24 A

IAR TC= 25°C6A

EAS TC= 25°C 750 mJ

dv/dt IS≤ IDM, VDD ≤ VDSS,T

J ≤ 150°C 15 V/ns

PDTC= 25°C 463 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.

FCMounting Force (PLUS220) 11..65/2.5..14.6 N/lb.

Weight TO-247 6 g

PLUS220 types 4 g

IXFH12N100P

IXFV12N100P

IXFV12N100PS

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 1mA 1000 V

VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V

IGSS VGS = ± 30V, VDS = 0V ± 100 nA

IDSS VDS = VDSS, VGS = 0V 20 μA

TJ = 125°C 1.0 mA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.05 Ω

PolarTM HiPerFETTM

Power MOSFETs

Features

zLow RDS(on) and QG

zAvalanche Rated

zLow Package Inductance

zFast Intrinsic Rectifier

Advantages

zHigh Power Density

zEasy to Mount

zSpace Savings

Applications

zSwitch-Mode and Resonant-Mode

Power Supplies

zDC-DC Converters

zLaser Drivers

zAC and DC Motor Drives

zRobotics and Servo Controls

PLUS220 (IXFV)

GDSD (Tab)

PLUS220SMD (IXFV_S)

G

S

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

D (Tab)

G

S

D

D (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFH12N100P IXFV12N100P

IXFV12N100PS

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 20V, ID = 0.5 • ID25, Note 1 4.8 8.8 S

RGi Gate Input Resistance 1.9 Ω

Ciss 4080 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 246 pF

Crss 40 pF

td(on) 30 ns

tr 25 ns

td(off) 60 ns

tf 36 ns

Qg(on) 80 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 24 nC

Qgd 35 nC

RthJC 0.27 °C/W

RthCS (TO-247&PLUS220) 0.25 °C/W

Source-Drain Diode Characteristic Values

TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 12 A

ISM Repetitive, Pulse Width Limited by TJM 48 A

VSD IF = IS, VGS = 0V, Note 1 1.5 V

trr 300 ns

QRM 0.8 μC

IRM 7.9 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IF = 6A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 2Ω (External)

PLUS220 Outline

PLUS220SMD Outline

e

∅ P

TO-247 Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

IXFH12N100P IXFV12N100P

IXFV12N100PS

Fi g . 1. Ou tp u t C h ar acteri sti cs @ T

J

= 25ºC

0

2

4

6

8

10

12

0123456789101112

V

DS

- V olts

I

D

- Amperes

V

GS

= 10V

8V

5V

7V

6V

Fi g . 2. Extend ed Ou tp u t C har acter i sti cs @ T

J

= 25ºC

0

4

8

12

16

20

24

0 5 10 15 20 25 30

V

DS

- V olts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fi g . 3. Ou tp u t C h ar acteri sti cs @ T

J

= 125ºC

0

2

4

6

8

10

12

0 5 10 15 20 25 30

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 6A Value vs.

Junction T em perature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 12A

I

D

= 6A

Fig. 5. R

DS(on)

Norm alized to I

D

= 6A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

0 2 4 6 8 1012141618202224

I

D

- Ampere s

R

DS(on)

- Normalized

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maxim um Drain Current vs.

Case Temper atu r e

0

2

4

6

8

10

12

14

-50 -25 0 25 50 75 100 125 150

T

C

- Deg rees Cen tigrade

I

D

- Ampere s

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFH12N100P IXFV12N100P

IXFV12N100PS

IXYS REF: F_12N100P(75-744)4-01-08-A

Fig. 7. Input Admittance

0

2

4

6

8

10

12

14

16

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Vo lts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

2

4

6

8

10

12

14

16

18

0 2 4 6 8 10 12 14 16 18

I

D

- Amperes

g

f s - Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

5

10

15

20

25

30

35

40

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

V

SD

- Volt s

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

2

4

6

8

10

12

14

16

0 102030405060708090100110

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 500V

I

D

= 6A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- V olts

Capacitance - PicoFara ds

f

= 1 MHz

Ciss

Crss

Coss

Fig . 12. Maximu m Tr an s i ent Th ermal I mped an c e

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W