N-Channel JFET
Monolithic Dual
U440 / U441
FEATURES
••High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS
••Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical
••Low Noise
APPLICATIONS
••Diffe ren tial W i de band Amplifiers
••VHF/UHF Am plifiers
••Tes t and Measurement
••Multi-Chip/Hybrids
DESCRIPTION
The U440 Series is an N-Channel Monolithic Dual JFET
designed for high speed am plifier circuits. Featuring high gain
(> 6 mS typical), low leakage (< 1pA typ) and low noise. This
series is an ex cellent choice for diff er ent ial amplifier des igns.
ORDERING INFORMATION
Part Package Temparature Range
U440-1 Herm etic TO- 71 Package -55oC to +150oC
XU440-1 Sorte d Chips in Carrier s -55oC to +150oC
PIN CONFIGUR ATI O N
CORPORATION
S2 G1 D2 D1G2 S1
TO-71
1
2
3456
1
2
3
4
5
6
SOURCE 1
DRAIN 1
GATE 1
SOURCE 2
DRAIN 2
GATE 2
BOTTOM VIEW
CJ1
U440 / U441
CORPORATION
ABSOLUTE M AXIM UM R A T INGS (TA = 2 5oC unless otherwise not ed)
Param et er/Test Con ditio n Symbol Limit Unit
Gate- Dr ain Voltage VGD -25 V
Gate-Source Voltage VGS -25 V
Gate-Gate V oltage VGG ±50 V
Forwar d G ate Cur rent I G50 mA
Power Dissipat ion (per side) PD250 mW
(total) 350 mW
Power Der at ing (per side) 2 mW / oC
(total) 2.8 mW/ oC
Oper at ing J unct ion Temper at ur e TJ- 55 to 15 0 oC
Stor age Tempe ratu re Tstg -65 t o 200 oC
Lead Tempe ra tu re (1/1 6 " fr om case for 1 0 seconds) TL300 oC
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unless other wise no ted)
SYMBOL CHARACTERISTCS TYP1U440 U441 UNIT TEST CONDITIONS
MIN MAX MIN MAX
STATIC
V(BR)GSS Gate-Source Breakdown Voltage -35 -25 -25 VIG = -1µA, VDS = 0V
VGS(OFF) Gate-Source Cut off Voltage -3.5 -1 -6 -1 -6 VDS = 10V, ID = 1nA
IDSS Saturation Drain Current 215630630 mAV
DS = 10V, VGS = 0V
IGSS Gate Reverse Current -1 -500 -500 pA VGS = -15V, VDS = 0V
-2 nA TA = 150oC
IGGate Operating Current -1 -500 -500 pA VDG = 10V, ID = 5mA
-0.3 nA TA = 125oC
VGS(F) Gate-Source Forward V oltage 0.7 V IG = 1mA, VDS = 0V
DYNAMIC
gfs Common-Sourc e Forward Transconductance 6 4.5 9 4.5 9 mS VDG = 10V, ID = 5mA
f = 1kHz
gos Common-Source Output Conductance 70 200 200 µS
Ciss Common-Source Input Capacitance 3 pF VDG = 10V, ID = 5mA
f = 1MHz
Crss Common-Source Reverse Transfer Capacitance 1
enEquivalent Input Noise Voltage 4 nV/ Hz VDG = 10V, ID = 5mA
f = 10kHz
MATCHING
| VGS1-VGS2| Differential Gate-Source Voltage 6 10 20 mV VDG = 10V, ID = 5mA
∆ | VGS1-VGS2|
∆TGate-Source Voltage Differential Change with
Temperature 20 µV/ oCT = -55 to 25oCVDG =10V,
ID = 5mA
20 T = 25 to 125oC
IDSS1
IDSS2 Saturation Drain Current Ratio 0.97 VDS = 10V, VGS = 0V
gfs1
gfs2 Transconductance Ratio 0.97 VDG = 10V, ID = 5mA
f= 1 kHz
CMRR Common Mode Rejection Rati o 85 dB VDD = 5 to 10V, ID = 5mA
NOTES: 1 . For design aid only, not subject to product ion testing.
2. Pulse test; PW = 30 0µs, duty cycl e ≤ 3%.
