BUZ41A Semiconductor Data Sheet 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2256.1 Features * 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 1.500 (BUZ41 field effect transistor designed for applications such as * SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub* Nanosecond Switching Speeds relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject * Linear Transfer Characteristics (4.5A, This type can be operated directly from integrated circuits. * High Input Impedance 500V, Formerly developmental type TA17415. * Majority Carrier Device 1.500 Ordering Information * Related Literature Ohm, - TB334 "Guidelines for Soldering Surface Mount PACKAGE BRAND N-Chan- PART NUMBER Components to PC Boards" BUZ41A TO-220AB BUZ41A nel Power NOTE: When ordering, use the entire part number. Symbol MOSD FET) /Author G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-220AB ChanSOURCE nel DRAIN Power GATE MOSDRAIN (FLANGE) FET, TO220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ41A TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 35oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ20 500 500 4.5 18 20 75 0.6 -55 to 150 E 55/150/56 UNITS V V A A V W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 500 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V TJ = 25oC, VDS = 500V, VGS = 0V - 20 250 A TJ = 125oC, VDS = 500V, VGS = 0V - 100 1000 A VDS = 0V, VGS = 20V - 10 100 nA rDS(ON) ID = 2.5A, VGS = 10V (Figure 8) - 1.4 1.5 gfs VDS = 25V, ID = 2.5A (Figure 11) 1.5 2.5 - S - 30 45 ns - 40 60 ns td(OFF) - 110 140 ns tf - 50 65 ns - 1500 2000 pF Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time VCC = 30V, ID 2.6A, VGS = 10V, RGS = 50, RL = 10. (Figures 14, 15) Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) Output Capacitance COSS - 110 170 pF Reverse Transfer Capacitance CRSS - 40 70 pF Thermal Resistance Junction to Case RJC 1.67 oC/W Thermal Resistance Junction to Ambient RJA 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ISD TC = 25oC - - 4.5 A Pulsed Source to Drain Current ISDM TC = 25oC - - 18 A Source to Drain Diode Voltage VSD TJ = 25oC, ISD = 9A, VGS = 0V - 1.1 1.5 V TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/s, VR = 100V - 1200 - ns - 6 - C Continuous Source to Drain Current Reverse Recovery Time trr Reverse Recovery Charge QRR NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 2 BUZ41A Unless Otherwise Specified 1.2 6 1.0 5 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 4 3 2 1 .0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 0 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZJC, TRANSIENT THERMAL IMPEDANCE VGS 10V 1 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 10 1s 101 10s 100s 100 10-1 100 PD = 75W 9 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 101 1ms 10ms 100ms DC 102 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 3 103 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = MAX RATED TC = 25oC 7.0V 8.0V 10V 20V 8 7.5V PULSE DURATION = 80s TJ = 25oC VGS = 6.5V 7 6 VGS = 6.0V 5 VGS = 5.5V 4 3 VGS = 5.0V 2 VGS = 4.5V 1 0 VGS = 4.0V 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 60 BUZ41A Unless Otherwise Specified (Continued) 7 6 PULSE DURATION = 80s VDS = 25V TJ = 25oC 6 rDS(ON), ON-STATE RESISTANCE () IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 5 4 3 2 1 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) rDS(ON), DRAIN TO SOURCE ON RESISTANCE () PULSE DURATION = 80s ID = 2.5A VGS = 10V 3 2 1 0 -50 0 50 100 VGS = 5V 150 3 7V 2 7.5V 8V 9V 1 10V 20V 0 2 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD COSS CRSS 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 10 VDS = VGS, ID = 1mA 3 2 1 0 5 0 8 -50 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE CISS 10-2 4 6 ID, DRAIN CURRENT (A) 4 VGS = 0, f = 1MHz 10-1 6.5V TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 100 6V 4 TJ, JUNCTION TEMPERATURE (oC) 101 5.5V FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT VGS(TH), GATE THRESHOLD VOLTAGE (V) FIGURE 6. TRANSFER CHARACTERISTICS 4 5 0 10 PULSE DURATION = 80s 4 PULSE DURATION = 80s VDS = 25V TJ = 25oC 3 2 1 0 0 1 2 3 4 5 ID, DRAIN CURRENT (A) 6 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 7 BUZ41A 102 Unless Otherwise Specified (Continued) 15 PULSE DURATION = 80s 101 TJ = 150oC TJ = 25oC 100 10-1 0 ID = 6.8A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) Typical Performance Curves 0.5 1.0 1.5 VSD, SOURCE TO DRAIN VOLTAGE (V) VDS = 400V 5 0 2.0 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE VDS = 100V 10 0 10 20 30 Qg(TOT), TOTAL GATE CHARGE (nC) 40 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 14. SWITCHING TIME TEST CIRCUIT 0.2F 50% PULSE WIDTH FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% 10% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 16. GATE CHARGE TEST CIRCUIT 5 0 Ig(REF) 0 FIGURE 17. GATE CHARGE WAVEFORMS