TIRFD210,211 D82BN2,M2 2@ [MOS FET 0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 0 FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. N-CHANNEL fA @ CASE STYLE 4-PIN DIP DIMENSIONS ARE IN INCHES ANO (MILLIMETERS) This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features onan H source Polysilicon gate Improved stability and reliability Powe No secondary breakdown Excellent ruggedness [r-0.245 (6.22) e Ultra-fast switching Independent of temperature | 500 Voltage controlled High transconductance A) soe) Ts e Low input capacitance Reduced drive requirement oow aca (k-]} ots e 0.022 (0.56) _ Excellent thermal stability Ease of paralleling | rey | ~ 0.100 }~ 018 (2.54) (3.81) maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL IRFD210/D82BN2_ | IRFD211/D82BM2 UNITS Drain-Source Voltage Voss 200 150 Voits Drain-Gate Voltage, Rag = 1MO VpGR 200 150 Volts Continuous Drain Current @ Ta = 25C ID 0.6 0.6 A Ta = 100C) 0.35 0.35 A Pulsed Drain Current ipbM 2.5 2.5 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Ta = 25C Pp 1.0 1.0 Watts Derate Above 25C 8 8 mW/C Operating and Storage Junction Temperature Range Ty, Tsta ~55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Ambient Resa 125 125 C/W Maximum Lead Temperature for Soldering Purposes: 1% from Case for 5 Seconds Th 300 300 C (1) Device mounted to vertical pc board in free air with drain lead soidered to 0.20 in? minimum copper run area. (2) Repetitive Rating: Pulse width limited by max. junction temperature. 245electrical characteristics (T, = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRFD210/D82BN2 BVpss 200 _ _ Volts (Vas = OV, Ip = 250 A) IRFD211/D82BM2 150 _ - Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Vas = OV, Ta = 25C) _ _ 250 uA (Vps = Max Rating, 0.8, Vag = OV, Ta = 125C) _ _ 1000 ar tly ry tal Current lass _ _ +500 nA on characteristics Gate Threshold Voltage Ta = 25C | VasctH) 2.0 _ 4.0 Voits (Vps = Vas; |p = 250 nA) On-State Drain Current 0.6 _ _ A (Vas = 10V, Vps = 10V) D(ON) . Static Drain-Source On-State Resistance _ (Vag = 10V, Ip = 0.3A) Rps(ON) 1.1 1.5 Ohms Forward Transconductance (Vps = 10V, Ip = 0.3A) Ofs 0.35 0.4 _ mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 120 150 pF Output Capacitance Vps = 25V Coss 40 80 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 10 25 pF switching characteristics Turn-on Delay Time Vps = 90V ta(on) _ 5 _ ns Rise Time Ip = 0.3A, Vag = 15V tr _ 15 _ ns Turn-off Delay Time Reen = 500, Res = 12.59 ta(off) _ 10 _ ns Fall Time (Res (equiv.) = 100) tt _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 0.60 A Pulsed Source Current Isu _ _ 2.5 A Diode Forward Voltage Ig = 0.60A Vv _ 0.8 20 Volts (Ta = 25C, Vag = OV) SD Reverse Recovery Time trr - 100 _ ns (Ig = 0.6A, dig/dt = 100A/ps, Ta = 125C) Qrr 0.75 uc *Pulse Test: Pulse width < 300 ys, duty cycle = 2% 10 1 9.1 opera IN MAY BE LIMITED BY ROS(ON) i i s PULSE Tas 25C 01 1 2 4 6 810 20 40 80 80 100 200 Vos, DRAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 246 24 22 CONDITION: Rog(on) CONDITIONS: Ip = 0.3 A, Vag = 10V 2.0 Vgg(TH) CONDITIONS: Ip = 250A, Ving = Vag 1.8 Rosion) 1.6 14 1.2 1.0 0.8 0.6 Rosion) AND Vesrr4) NORMALIZED 0.4 0.2 -40 0 40 80 120 160 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Roygion, AND Vagirn, VS. TEMP.