MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren fur die Oberflachenmontage PNP PNP Version 2012-01-11 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MMBT2907 MMBT2907A 40 V 60 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 60 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) - IC 600 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. 2 DC current gain - Kollektor-Basis-Stromverhaltnis ) - IC = 0.1 mA, - VCE = 10 V MMBT2907 MMBT2907A hFE hFE 35 75 - - - - - IC = 1 mA, - VCE = 10 V MMBT2907 MMBT2907A hFE hFE 50 100 - - - - - IC = 10 mA, - VCE = 10 V MMBT2907 MMBT2907A hFE hFE 75 100 - - - - - IC = 500 mA, - VCE = 10 V MMBT2907 MMBT2907A hFE hFE 30 50 - - - - hFE 100 - 300 - - - - 0.4 V 1.6 V - IC = 150 mA, - VCE = 10 V 2 Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung ) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA 1 2 MMBT2907 MMBT2907A - VCEsat - VCEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT2907 / MMBT2907A Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - VCEsat - VCEsat - - - - 0.4 V 1.6 V - VBEsat - VBEsat - - - - 1.3 V 2.6 V - ICBO - ICBO - - - - 20 nA 10 nA - ICBO - - 20 A fT 200 MHz - - CCBO - - 8 pF CEBO - - 30 pf ton - - 45 ns td - - 10 ns tr - - 40 ns toff - - 100 ns ts - - 80 ns tf - - 30 ns Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 50 V, (E open) MMBT2907 MMBT2907A - VCB = 50 V, Tj = 125C, (E open) Gain-Bandwidth Product - Transitfrequenz - VCE = 20 V, - IC = 50 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten (between 10% and 90% levels) turn on delay time rise time turn off storage time fall time - VCC = 30 V, - VBE = 1.5 V - IC = 150 mA, - IB1 = 15mA - VCC = 30 V, - IC = 150 mA, - IB1 = - IB2 = 15 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) MMBT2222 / MMBT2222A MMBT2907 = 2B MMBT2907A = 2F Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG