MMBT2907 / MMBT2907A
MMBT2907 / MMBT2907A
PNP Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP
Version 2012-01-11
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
MMBT2907 MMBT2907A
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 40 V 60 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 60 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) - IC600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- IC = 0.1 mA, - VCE = 10 V MMBT2907
MMBT2907A
hFE
hFE
35
75
–
–
–
–
- IC = 1 mA, - VCE = 10 V MMBT2907
MMBT2907A
hFE
hFE
50
100
–
–
–
–
- IC = 10 mA, - VCE = 10 V MMBT2907
MMBT2907A
hFE
hFE
75
100
–
–
–
–
- IC = 500 mA, - VCE = 10 V MMBT2907
MMBT2907A
hFE
hFE
30
50
–
–
–
–
- IC = 150 mA, - VCE = 10 V hFE 100 – 300
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
MMBT2907
MMBT2907A
- VCEsat
- VCEsat
–
–
–
–
0.4 V
1.6 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
2.5 max
1.3
±0.1
1.1
0.4
2.9
±0.1
1 2
3
Type
Code
1.9
MMBT2907 / MMBT2907A
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VCEsat
- VCEsat
–
–
–
–
0.4 V
1.6 V
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VBEsat
- VBEsat
–
–
–
–
1.3 V
2.6 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 50 V, (E open) MMBT2907
MMBT2907A
- ICBO
- ICBO
–
–
–
–
20 nA
10 nA
- VCB = 50 V, Tj = 125°C, (E open) - ICBO – – 20 µA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 20 V, - IC = 50 mA, f = 100 MHz fT200 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO – – 8 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 2 V, IC = ic = 0, f = 1 MHz CEBO – – 30 pf
Switching times – Schaltzeiten (between 10% and 90% levels)
turn on
delay time
rise time
- VCC = 30 V, - VBE = 1.5 V
- IC = 150 mA, - IB1 = 15mA
ton – – 45 ns
td– – 10 ns
tr– – 40 ns
turn off
storage time
fall time
- VCC = 30 V, - IC = 150 mA,
- IB1 = - IB2 = 15 mA
toff – – 100 ns
ts– – 80 ns
tf– – 30 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren MMBT2222 / MMBT2222A
Marking - Stempelung MMBT2907 = 2B
MMBT2907A = 2F
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
