IXTP76P10T - IXYS - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C - 100 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 100 V

VGSS Continuous ±15 V

VGSM Transient ±25 V

ID25 TC= 25°C - 76 A

IDM TC= 25°C, Pulse Width Limited by TJM - 230 A

IATC= 25°C - 38 A

EAS TC= 25°C1J

PDTC= 25°C 298 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-220 & TO-247) 1.13 /10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100024A(11/10)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250μA -100 V

VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V

IGSS VGS = ±15V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V - 15 μA

TJ = 125°C - 750 μA

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 25 mΩ

TrenchPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTA76P10T

IXTP76P10T

IXTH76P10T

VDSS = - 100V

ID25 = - 76A

RDS(on) ≤≤

≤≤

≤ 25mΩΩ

ΩΩ

Ω

Features

zInternational Standard Packages

z Avalanche Rated

zExtended FBSOA

zFast Intrinsic Diode

z Low RDS(ON) and QG

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zHigh-Side Switching

zPush Pull Amplifiers

zDC Choppers

zAutomatic Test Equipment

zCurrent Regulators

zBattery Charger Applications

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

G

S

DD (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

GDS

TO-220AB (IXTP)

D (Tab)

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA76P10T IXTP76P10T

IXTH76P10T

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = 0.5 • ID25, Note 1 35 58 S

Ciss 13.7 nF

Coss VGS = 0V, VDS = - 25V, f = 1MHz 890 pF

Crss 275 pF

td(on) 25 ns

tr 40 ns

td(off) 52 ns

tf 20 ns

Qg(on) 197 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC

Qgd 65 nC

RthJC 0.42 °C/W

RthCS TO-220 0.50 °C/W

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V - 76 A

ISM Repetitive, Pulse Width Limited by TJM - 304 A

VSD IF = - 38A, VGS = 0V, Note 1 -1.3 V

trr 70 ns

QRM 215 nC

IRM - 6 A

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1Ω (External)

IF = - 38A, -di/dt = -100A/μs

VR = - 50V, VGS = 0V

TO-263 Outline

TO-247 Outline

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

Pins: 1 - Gate

2 - Drain

3 - Source

IXTA76P10T IXTP76P10T

IXTH76P10T

Fi g . 1. Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

-80

-70

-60

-50

-40

-30

-20

-10

0

-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 5

V

- 6

V

- 7

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

-280

-240

-200

-160

-120

-80

-40

0

-30-25-20-15-10-50

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 5

V

- 6

V

- 7

V

- 8

V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ T

J

= 125ºC

-80

-70

-60

-50

-40

-30

-20

-10

0

-3.2-2.8-2.4-2-1.6-1.2-0.8-0.40

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 7V

- 6V

- 5V

Fig. 4. R

DS(on)

Normalized to I

D

= - 38A vs.

Junction Tem perature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= - 76A

I

D

= - 38A

Fig. 5. R

DS(on)

Normalized to I

D

= - 38A vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-240-200-160-120-80-400

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

Fi g . 6. Maximu m D r ai n C u r r en t vs.

Case Temp er atu r e

-80

-70

-60

-50

-40

-30

-20

-10

0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

I

D

- Amperes

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA76P10T IXTP76P10T

IXTH76P10T

Fig. 7. Input Admittance

-140

-120

-100

-80

-60

-40

-20

0

-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

-160-140-120-100-80-60-40-200

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-240

-200

-160

-120

-80

-40

0

-1.5-1.4-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

0 20 40 60 80 100 120 140 160 180 200

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= - 50V

I

D

= - 38A

I

G

= -1mA

Fig. 11. Capacitan ce

100

1,000

10,000

100,000

-40-35-30-25-20-15-10-50

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MH

z

Ciss

Crss

Coss

Fi g . 12. F o r war d-Bias Safe Op er at i n g Area

1

10

100

1,000

110100

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms 100µs

R

DS(on)

Limit 10ms

DC

-

---

-

100ms

IXTA76P10T IXTP76P10T

IXTH76P10T

Fi g . 14. R esi sti ve Tu rn - o n Ri s e Ti me vs.

Drain Current

20

24

28

32

36

40

44

-76-72-68-64-60-56-52-48-44-40-36

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

T

J

= 25ºC

T

J

= 125ºC

Fig. 15. R esisti ve Tu r n-o n Switch ing Times vs.

Gate R esi stan c e

0

40

80

120

160

200

0 2 4 6 8 101214161820

R

G

- Ohms

t

r

- Nanoseconds

10

30

50

70

90

110

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 50V I

D

= - 76A, - 38A

Fig. 16. R esisti ve Tu r n-o ff Switch i ng Ti mes vs.

Jun cti o n Temp erat u r e

16

17

18

19

20

21

22

23

24

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

35

40

45

50

55

60

65

70

75

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

I

D

= - 38A

I

D

= - 76A

Fi g . 17. R esi sti ve Turn -o ff Swi tch i n g Times vs.

Drain Current

34

38

42

46

50

54

58

62

66

-76-72-68-64-60-56-52-48-44-40-36

I

D

- Amperes

t

f

- Nanoseconds

16

17

18

19

20

21

22

23

24

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

T

J

= 125ºC, 25ºC

Fig. 13. Resist i ve Tu r n-o n R i se Time vs.

Jun ctio n Temperatur e

20

24

28

32

36

40

44

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

I

D

= - 38A

I

D

= - 76A

Fig. 18. Resist i ve Turn- o ff S witchin g Times vs.

Gate Resistance

0

40

80

120

160

200

0 2 4 6 8 101214161820

R

G

- Ohms

t

f

- Nanoseconds

0

60

120

180

240

300

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 50V

I

D

= - 38A, - 76A

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA76P10T IXTP76P10T

IXTH76P10T

IXYS REF: T_76P10T(A6)11-08-10-A

Fi g. 19 . Maximum Tr ansi en t Th er mal I mp ed a n ce

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W