MA4SW510B-1 - M/A-COM Technology Solutions

HMIC™ Silicon SP5T PIN Diode Switch

with Integrated Bias Network

Rev. V4

MA4SW510B-1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Features

 Broad Bandwidth Specified up to 18 GHz

 Usable up to 26 GHz

 Integrated Bias Network

 Low Insertion Loss / High Isolation

 Rugged, Glass Encapsulated Construction

 Fully Monolithic

 RoHS* Compliant

Description

The MA4SW510B-1 device is a SP4T broadband

switch with integrated bias network utilizing

MACOM's HMICTM (Heterolithic Microwave

Integrated Circuit) process, US Patent 5,268,310.

This process allows the incorporation of silicon

pedestals that form series and shunt diodes or vias

by imbedding them in low loss, low dispersion

glass. By using small spacing between elements,

this combination of silicon and glass gives HMIC

devices low loss and high isolation performance with

exceptional repeatability through low millimeter

frequencies. Large bond pads facilitate the use of

low inductance ribbon bonds, while gold backside

metallization allows for manual or automatic chip

bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag

solders or electrically conductive silver epoxy.

These high performance switches are suitable for

use in multi-band ECM, Radar, and instrumentation

control circuits where high isolation to insertion loss

ratios are required. With a standard +5 V / -5 V, TTL

controlled PIN diode driver, 80 ns switching speeds

can be achieved.

Yellow areas denote wire bond pads

*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Ordering Information

Part Number Package

MA4SW510B-1 Waffle Pack

J6J2

Common Port

DC Bias

J3 J5J4

Functional Diagrams

HMIC™ Silicon SP5T PIN Diode Switch

with Integrated Bias Network

Rev. V4

MA4SW510B-1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Electrical Specifications: TA = +25°C, 10 mA (On-Wafer Measurements)

Parameter Test Conditions Units Min. Typ. Max.

Insertion Loss

2 GHz

6 GHz

12 GHz

18 GHz

dB —

—

0.9

1.2

1.8

1.5

1.0

1.5

2.1

Isolation

2 GHz

6 GHz

12 GHz

18 GHz

—

Input Return Loss

6 GHz

12 GHz

18 GHz

dB —

—

Output Return Loss

2 GHz

6 GHz

12 GHz

18 GHz

dB —

—

Switching Speed1 10 GHz ns — 80 —

Absolute Maximum Ratings2,3,4

Parameter Absolute Maximum

RF CW Incident Power +33 dBm

Reverse Voltage -50 V

Bias Current per Port ±50 mA @ +25°C

Junction Temperature +175°C

Operating Temperature -65°C to +125°C

Storage Temperature -65°C to +150°C

2. Exceeding any one or combination of these limits may cause

permanent damage to this device.

3. MACOM does not recommend sustained operation near these

survivability limits.

4. Maximum operating conditions for a combination of RF power,

DC bias and temperature: +33 dBm CW @ 15 mA (per diode)

@ +85°C.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

These electronic devices are sensitive to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these Class 0

(HBM) and Class C1 (CDM).devices.

1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the

modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an

RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady

state current, is typically 10:1.

HMIC™ Silicon SP5T PIN Diode Switch

with Integrated Bias Network

Rev. V4

MA4SW510B-1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

-5

-4

-3

-2

-1

2 4 6 8 10 12 14 16 18

S21 (dB)

Frequency (GHz)

-70

-60

-50

-40

-30

-20

2 4 6 8 10 12 14 16 18

S21 (dB)

Frequency (GHz)

-30

-25

-20

-15

-10

-5

2 4 6 8 10 12 14 16 18

S11 (dB)

Frequency (GHz)

-30

-25

-20

-15

-10

-5

2 4 6 8 10 12 14 16 18

S22 (dB)

Frequency (GHz)

Typical Performance Curves:

Isolation vs. Frequency Insertion Loss vs. Frequency

Input Return Loss vs. Frequency Output Return Loss vs. Frequency

HMIC™ Silicon SP5T PIN Diode Switch

with Integrated Bias Network

Rev. V4

MA4SW510B-1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Typical Bias Network

Operation of the MA4SW510B-1 PIN Switch

Operation of the HMIC Series of PIN switches is achieved by the simultaneous application of negative DC current

to the low loss port and positive DC current to the remaining isolated switching ports per the Driver Connections

table below. The control currents should be supplied by constant current sources. For insertion loss, -10 mA bias

results in approximately -2 V, and for Isolation,+10 mA yields approximately +0.9 V at the respective bias nodes.

The backside area of the die is the RF and DC return ground plane.

Typical Driver Connections

DC Control Current (mA) RF Output States

B3 B4 B5 J1-J2 J1-J3 J1-J4 B2 J1-J5 B6 J1-J6

+10 +10 +10 low loss Isolation Isolation -10 Isolation +10 Isolation

-10 +10 +10 Isolation low loss Isolation +10 Isolation +10 Isolation

+10 -10 +10 Isolation Isolation low loss +10 Isolation +10 Isolation

+10 +10 +10 -10 Isolation Isolation Isolation low loss +10 Isolation

+10 +10 +10 +10 Isolation Isolation Isolation Isolation -10 low loss

J3J5

DC Bias

Input Common Port

HMIC™ Silicon SP5T PIN Diode Switch

with Integrated Bias Network

Rev. V4

MA4SW510B-1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Chip Dimensions5,6

DIM

Mils Millimeters

Min. Max. Min. Max.

A 54.0 55.0 1.37 1.40

B 27.0 28.0 0.69 0.71

C 30.0 31.0 0.76 0.79

D 31.0 32.0 0.79 0.81

E 19.0 20.0 0.48 0.51

F 118.5 120.5 3.01 3.06

G 35.0 36.0 0.89 0.91

RF Bond Pads (J1 - J6) 7.0 x 5.0 ref. 0.178 x 0.127 ref.

DC Bond Pads (B2 - B6) 5.0 x 5.0 ref. 0.127 x 0.127 ref.

Chip Thickness 5.0 ref. 0.127 ref.

5. Topside and backside metallization is gold, 2.5 µm thick typical.

6. Yellow areas indicate wire bonding pads.

HMIC™ Silicon SP5T PIN Diode Switch

with Integrated Bias Network

Rev. V4

MA4SW510B-1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Cleanliness

The chips should be handled in a clean environment

free of dust and organic contamination.

Wire / Ribbon Bonding

Thermo compression wedge bonding using 0.003” x

0.00025” ribbon or 0.001” diameter gold wire is

recommended. A work stage temperature of

150°C - 200°C, tool tip temperature of 120°C - 150°

and a downward force of 18 to 22 grams should be

used. If ultrasonic energy is necessary, it should be

adjusted to the minimum level required to achieve a

good bond. Excessive power or force will fracture

the silicon beneath the bond pad causing it to lift.

RF bond wires and ribbons should be kept as short

as possible for optimum RF performance.

Chip Mounting

HMIC switches have Ti-Pt-Au backside metallization

and can be mounted using a gold-tin eutectic solder

or conductive epoxy. Mounting surface must be free

of contamination and flat.

Eutectic Die Attachment

An 80/20, gold-tin, eutectic solder is recommended.

Adjust the work surface temperature to 255oC and

the tool tip temperature to 265oC. After placing the

chip onto the circuit board re-flow the solder by

applying hot forming gas (95/5 Ni/H) to the top

surface of the chip. Temperature should be

approximately 290oC and not exceed 320oC for

more than 20 seconds. Typically no more than three

seconds is necessary for attachment. Solders rich in

tin should be avoided

Epoxy Die Attachment

A minimum amount of epoxy, 1 - 2 mils thick, should

be used to attach chip. A thin epoxy fillet should be

visible around the outer perimeter of the chip after

placement. Epoxy cure time is typically 1 hour at

150°C.

HMIC™ Silicon SP5T PIN Diode Switch

with Integrated Bias Network

Rev. V4

MA4SW510B-1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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assumes no responsibility for errors or omissions in these materials. MACOM may make changes to

specifications and product descriptions at any time, without notice. MACOM makes no commitment to update

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