Integrated Silicon Solution, Inc. — 1-800-379-4774
1
PRELIMINARY INFORMATION Rev. 00B
04/12/00
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
IS61SF12832
IS61SF12836 ISSI®
FEATURES
• Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns,
and 12 ns
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data
inputs and control signals
• Pentium™ or linear burst sequence control
using MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and
119-pin PBGA package
• Single +3.3V +10%, –5% power supply
• Power-down snooze mode
DESCRIPTION
The ISSI IS61SF12832 and IS61SF12836 are high-speed
synchronous static RAM designed to provide a burstable,
high-performance memory for high speed networking and
communication applications. It is organized as 131,072
words by 32 bits or 36 bits, fabricated with ISSI's advanced
CMOS technology. The device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs into
a single monolithic circuit. All synchronous inputs pass
through registers controlled by a positive-edge-triggered
single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQa, BW2 controls DQb, BW3 controls DQc,
BW4 controls DQd, conditioned by BWE being LOW. A LOW
on GW input would cause all bytes to be written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller) input
pins. Subsequent burst addresses can be generated internally
and controlled by the ADV (burst address advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Interleave
burst is achieved when this pin is tied HIGH or left floating.
128K x 32, 128K x 36 SYNCHRONOUS
FLOW-THROUGH STATIC RAM PRELIMINARY INFORMATION
MARCH 2000
FAST ACCESS TIME
Symbol Parameter 7.5 8 8.5 10 12 Units
tKQ Clock Access Time 7.5 8 8.5 10 12 ns
tKC Cycle Time 8.5 10 11 15 15 ns
Frequency 117 100 90 66 66 MHz
IS61SF12832
IS61SF12836 ISSI
®
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
04/12/00
BLOCK DIAGRAM
17
BINARY
COUNTER
A16-A0
BW1
GW
CLR
CE
CLK Q0
Q1
MODE
A0'
A0
A1
A1'
CLK
ADV
ADSC
ADSP
15 17
ADDRESS
REGISTER
CE
D
CLK
Q
DQd
BYTE WRITE
REGISTERS
D
CLK
Q
DQc
BYTE WRITE
REGISTERS
D
CLK
Q
DQb
BYTE WRITE
REGISTERS
D
CLK
Q
DQa
BYTE WRITE
REGISTERS
D
CLK
Q
ENABLE
REGISTER
CE
D
CLK
Q
ENABLE
DELAY
REGISTER
D
CLK
Q
BWE
BW4
CE
CE2
CE2
BW2
BW3
128K x 32, 128K x 36
MEMORY ARRAY
32
or
36
INPUT
REGISTERS
CLK
32
or
36
OE
4
32 or 36
OE DQ[31:0] or
DQ[35:0]
IS61SF12832
IS61SF12836 ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
PRELIMINARY INFORMATION Rev. 00B
04/12/00
PIN CONFIGURATION
PIN DESCRIPTIONS
A0, A1 Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A2-A16 Synchronous Address Inputs
CLK Synchronous Clock
ADSP Synchronous Processor Address
Status
ADSC Synchronous Controller Address
Status
ADV Synchronous Burst Address Advance
BW1-BW4 Individual Byte Write Enable
BWE Synchronous Byte Write Enable
GW Synchronous Global Write Enable
CE, CE2, CE2 Synchronous Chip Enable
OE Output Enable
DQa-DQd Synchronous Data Input/Output
MODE Burst Sequence Mode Selection
VCC +3.3V Power Supply
GND Ground
VCCQ Isolated Output Buffer Supply:
+3.3V
ZZ Snooze Enable
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
VCCQ
NC
NC
DQc1
DQc2
VCCQ
DQc5
DQc7
VCCQ
DQd1
DQd4
VCCQ
DQd6
DQd8
NC
NC
VCCQ
A6
CE2
A7
NC
DQc3
DQc4
DQc6
DQc8
VCC
DQd2
DQd3
DQd5
DQd7
NC
A5
NC
NC
A4
A3
A2
GND
GND
GND
BW3
GND
NC
GND
BW4
GND
GND
GND
MODE
A10
NC
ADSP
ADSC
VCC
NC
CE
OE
ADV
GW
VCC
CLK
NC
BWE
A1
A0
VCC
A11
NC
A8
A9
A12
GND
GND
GND
BW2
GND
NC
GND
BW1
GND
GND
GND
GND
A14
NC
A16
CE2
A15
NC
DQb6
DQb5
DQb4
DQb2
VCC
DQa7
DQa5
DQa4
DQa3
NC
A13
NC
NC
VCCQ
NC
NC
DQb8
DQb7
VCCQ
DQb3
DQb1
VCCQ
DQa8
DQa6
VCCQ
DQa2
DQa1
NC
ZZ
VCCQ
1 2 3 4 5 6 7
NC
DQb8
DQb7
VCCQ
GND
DQb6
DQb5
DQb4
DQb3
GND
VCCQ
DQb2
DQb1
GND
NC
VCC
ZZ
DQa8
DQa7
VCCQ
GND
DQa6
DQa5
DQa4
DQa3
GND
VCCQ
DQa2
DQa1
NC
A6
A7
CE
CE2
BW4
BW3
BW2
BW1
CE2
VCC
GND
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A8
A9
NC
DQc1
DQc2
VCCQ
GND
DQc3
DQc4
DQc5
DQc6
GND
VCCQ
DQc7
DQc8
GND
VCC
NC
GND
DQd1
DQd2
VCCQ
GND
DQd3
DQd4
DQd5
DQd6
GND
VCCQ
DQd7
DQd8
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
MODE
A5
A4
A3
A2
A1
A0
NC
NC
GND
VCC
NC
NC
A10
A11
A12
A13
A14
A15
A16
46 47 48 49 50
128K x 32
119-pin PBGA (Top View) 100-Pin TQFP
IS61SF12832
IS61SF12836 ISSI
®
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
04/12/00
PIN CONFIGURATION
PIN DESCRIPTIONS
A0, A1 Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A2-A16 Synchronous Address Inputs
CLK Synchronous Clock
ADSP Synchronous Processor Address
Status
ADSC Synchronous Controller Address
Status
ADV Synchronous Burst Address Advance
BW1-BW4 Individual Byte Write Enable
BWE Synchronous Byte Write Enable
GW Synchronous Global Write Enable
CE, CE2, CE2 Synchronous Chip Enable
OE Output Enable
DQa-DQd Synchronous Data Input/Output
MODE Burst Sequence Mode Selection
VCC +3.3V Power Supply
GND Ground
VCCQ Isolated Output Buffer Supply:
+3.3V
ZZ Snooze Enable
DQPa-DQPd Parity Data I/O
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
VCCQ
NC
NC
DQc1
DQc2
VCCQ
DQc5
DQc7
VCCQ
DQd1
DQd4
VCCQ
DQd6
DQd8
NC
NC
VCCQ
A6
CE2
A7
DQPc
DQc3
DQc4
DQc6
DQc8
VCC
DQd2
DQd3
DQd5
DQd7
DQPd
A5
NC
NC
A4
A3
A2
GND
GND
GND
BW3
GND
NC
GND
BW4
GND
GND
GND
MODE
A10
NC
ADSP
ADSC
VCC
NC
CE
OE
ADV
GW
VCC
CLK
NC
BWE
A1
A0
VCC
A11
NC
A8
A9
A12
GND
GND
GND
BW2
GND
NC
GND
BW1
GND
GND
GND
GND
A14
NC
A16
CE2
A15
DQPb
DQb6
DQb5
DQb4
DQb2
VCC
DQa7
DQa5
DQa4
DQa3
DQPa
A13
NC
NC
VCCQ
NC
NC
DQb8
DQb7
VCCQ
DQb3
DQb1
VCCQ
DQa8
DQa6
VCCQ
DQa2
DQa1
NC
ZZ
VCCQ
1 2 3 4 5 6 7
DQPb
DQb8
DQb7
VCCQ
GND
DQb6
DQb5
DQb4
DQb3
GND
VCCQ
DQb2
DQb1
GND
NC
VCC
ZZ
DQa8
DQa7
VCCQ
GND
DQa6
DQa5
DQa4
DQa3
GND
VCCQ
DQa2
DQa1
DQPa
A6
A7
CE
CE2
BW4
BW3
BW2
BW1
CE2
VCC
GND
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A8
A9
DQPc
DQc1
DQc2
VCCQ
GND
DQc3
DQc4
DQc5
DQc6
GND
VCCQ
DQc7
DQc8
GND
VCC
NC
GND
DQd1
DQd2
VCCQ
GND
DQd3
DQd4
DQd5
DQd6
GND
VCCQ
DQd7
DQd8
DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
MODE
A5
A4
A3
A2
A1
A0
NC
NC
GND
VCC
NC
NC
A10
A11
A12
A13
A14
A15
A16
46 47 48 49 50
128K x 36
119-pin PBGA (Top View) 100-Pin TQFP
IS61SF12832
IS61SF12836 ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
PRELIMINARY INFORMATION Rev. 00B
04/12/00
TRUTH TABLE
Address
Operation Used CE CE2 CE2 ADSP ADSC ADV WRITE OE DQ
Deselected, Power-down None H X X X L X X X High-Z
Deselected, Power-down None L X H L X X X X High-Z
Deselected, Power-down None L L X L X X X X High-Z
Deselected, Power-down None X X H H L X X X High-Z
Deselected, Power-down None X L X H L X X X High-Z
Read Cycle, Begin Burst External L H L L X X X X Q
Read Cycle, Begin Burst External L H L H L X Read X Q
Write Cycle, Begin Burst External L H L H L X Write X D
Read Cycle, Continue Burst Next X X X H H L Read L Q
Read Cycle, Continue Burst Next X X X H H L Read H High-Z
Read Cycle, Continue Burst Next H X X X H L Read L Q
Read Cycle, Continue Burst Next H X X X H L Read H High-Z
Write Cycle, Continue Burst Next X X X H H L Write X D
Write Cycle, Continue Burst Next H X X X H L Write X D
Read Cycle, Suspend Burst Current X X X H H H Read L Q
Read Cycle, Suspend Burst Current X X X H H H Read H High-Z
Read Cycle, Suspend Burst Current H X X X H H Read L Q
Read Cycle, Suspend Burst Current H X X X H H Read H High-Z
Write Cycle, Suspend Burst Current X X X H H H Write X D
Write Cycle, Suspend Burst Current H X X X H H Write X D
PARTIAL TRUTH TABLE
Function GW BWE BW1 BW2 BW3 BW4
Read H H XXXX
Read H L HHHH
Write Byte 1 H L L H H H
Write All Bytes H LLLLL
Write All Bytes L XXXXX
IS61SF12832
IS61SF12836 ISSI
®
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
04/12/00
INTERLEAVED BURST ADDRESS TABLE (MODE = VCC or No Connect)
External Address 1st Burst Address 2nd Burst Address 3rd Burst Address
A1 A0 A1 A0 A1 A0 A1 A0
00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00
LINEAR BURST ADDRESS TABLE (MODE = GND)
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
TBIAS Temperature Under Bias –40 to +85 °C
TSTG Storage Temperature –55 to +150 °C
PDPower Dissipation 1.6 W
IOUT Output Current (per I/O) 100 mA
VIN, VOUT Voltage Relative to GND for I/O Pins –0.5 to VCCQ + 0.3 V
VIN Voltage Relative to GND for –0.5 to VCC + 0.5 V
for Address and Control Inputs
VCC Voltage on Vcc Supply Relatiive to GND –0.5 to 4.6 V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This device contains circuitry to protect the inputs against damage due to high static
voltages or electric fields; however, precautions may be taken to avoid application of any
voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
0,0
1,0
0,1A1', A0' = 1,1
IS61SF12832
IS61SF12836 ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
PRELIMINARY INFORMATION Rev. 00B
04/12/00
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to +70°C 3.3V +10%, –5%
Industrial –40°C to +85°C 3.3V +10%, –5%
DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage IOH = –4.0 mA 2.4 —V
VOL Output LOW Voltage IOL = 8.0 mA —0.4 V
VIH Input HIGH Voltage 2.0 VCC + 0.3 V
VIL Input LOW Voltage –0.3 0.8 V
ILI Input Leakage Current GND ≤ VIN ≤ VCCQ(2) Com. –22µA
Ind. –55
ILO Output Leakage Current GND ≤ VOUT ≤ VCCQ, OE = VIH Com. –22µA
Ind. –55
POWER SUPPLY CHARACTERISTICS (Over Operating Range)
7.5 8 8.5 10 12
Symbol Parameter Test Conditions Max. Max. Max. Max. Max. Unit
ICC AC Operating Device Selected, Com. 270 250 230 190 170 mA
Supply Current All Inputs = VIL or VIH Ind. —260 240 200 180
OE = VIH, Vcc = Max.
Cycle Time ≥ tKC min.
ISB Standby Current Device Deselected, Com. 50 50 50 50 50 mA
VCC = Max., Ind. —60 60 60 60
All Inputs = VIH or VIL
CLK Cycle Time ≥ tKC min.
IZZ Power-down ZZ = VCCQ Com. 10 10 10 10 10 mA
Mode Current Clock Running Ind. —15 15 15 15
All Inputs ≤ GND + 0.2V
or ≥ Vcc – 0.2V
Notes:
1. The MODE pin has an internal pullup. This pin may be a No Connect, tied to GND, or tied to VCC.
2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 µA maximum leakage current when tied to ≤ GND + 0.2V
or ≥ Vcc – 0.2V.
IS61SF12832
IS61SF12836 ISSI
®
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
04/12/00
CAPACITANCE(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 1.5 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
AC TEST LOADS
Figure 2
Figure 1
Output
Buffer
Z
O
= 50Ω
1.5V
50Ω
30 pF
317 Ω
5 pF
Including
jig and
scope
351 Ω
OUTPUT
3.3V
IS61SF12832
IS61SF12836 ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
PRELIMINARY INFORMATION Rev. 00B
04/12/00
READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
7.5 8 8.5 10 12
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
fMAX
(3)
Clock Frequency —117 —100 —90 —66 —66 MHz
tKC
(3)
Cycle Time 8.5 —10 —11 —15 —15 —ns
tKH Clock High Time 3 —4—4.5 —4.5 —4.5 —ns
tKL
(3)
Clock Low Time 3 —4—4.5 —4.5 —4.5 —ns
tKQ
(3)
Clock Access Time —7.5 —8—8.5 —10 —12 ns
tKQX
(1)
Clock High to Output Invalid 2 —2—2—2—2—ns
tKQLZ
(1,2)
Clock High to Output Low-Z 0 —0—0—0—0—ns
tKQHZ
(1,2)
Clock High to Output High-Z 2 3.5 2 3.5 2 3.5 2 3.5 2 3.5 ns
tOEQ
(3)
Output Enable to Output Valid —3.5 —3.5 —3.5 —3.5 —5ns
tOELZ
(1,2)
Output Enable to Output Low-Z 0 —0—0—0—0—ns
tOEHZ
(1,2)
Output Disable to Output High-Z —3.5 —3.5 —3.5 —3.5 —3.5 ns
tAS
(3)
Address Setup Time 2 —2—2—2—4—ns
tSS
(3)
Address Status Setup Time 2 —2—2—2—4—ns
tWS
(3)
Write Setup Time 2 —2—2—2—4—ns
tCES
(3)
Chip Enable Setup Time 2 —2—2—2—4—ns
tAVS
(3)
Address Advance Setup Time 2 —2—2—2—4—ns
tAH
(3)
Address Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tSH
(3)
Address Status Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tWH
(3)
Write Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tCEH
(3)
Chip Enable Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tAVH
(3)
Address Advance Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
Notes:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.
3. Tested with load in Figure 1.
IS61SF12832
IS61SF12836 ISSI
®
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
04/12/00
READ/WRITE CYCLE TIMING
Single Read
Flow-through
Single Write
High-Z
High-Z
DATAOUT
DATAIN
OE
CE2
CE2
CE
BW4-BW1
BWE
GW
A16-A0
ADV
ADSC
ADSP
CLK
RD1 WR1
WR1
1a
1a
2a 2b 2c 2d
Unselected
Burst Read
t
KQX
t
KC
t
KL
t
KH
t
SS
t
SH
ADSP is blocked by CE inactive
t
SS
t
SH
t
AS
t
AH
t
WS
t
WH
t
WS
t
WH
t
WS
t
WH
RD2 RD3
t
CES
t
CEH
t
CES
t
CEH
t
CES
t
CEH
CE2 and CE2 only sampled with ADSP or ADSC
CE Masks ADSP
Unselected with CE2
t
OEQX
t
KQ
t
OEHZ
t
KQX
t
KQHZ
t
DS
t
DH
t
KQHZ
t
KQLZ
IS61SF12832
IS61SF12836 ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
11
PRELIMINARY INFORMATION Rev. 00B
04/12/00
WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
7.5 8 8.5 10 12
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tKC
(1)
Cycle Time 8.5 —10 —11 —15 —15 —ns
tKH
(1)
Clock High Time 3 —4—4.5 —4.5 —4.5 —ns
tKL
(1)
Clock Low Time 3 —4—4.5 —4.5 —4.5 —ns
tAS
(1)
Address Setup Time 2 —2—2—2—4—ns
tSS
(1)
Address Status Setup Time 2 —2—2—2—4—ns
tWS
(1)
Write Setup Time 2 —2—2—2—4—ns
tDS
(1)
Data In Setup Time 2 —2—2—2—4—ns
tCES
(1)
Chip Enable Setup Time 2 —2—2—2—4—ns
tAVS
(1)
Address Advance Setup Time 2 —2—2—2—4—ns
tAH
(1)
Address Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tSH
(1)
Address Status Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tDH
(1)
Data In Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tWH
(1)
Write Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tCEH
(1)
Chip Enable Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tAVH
(1)
Address Advance Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
Notes:
1. Tested with load in Figure 1.
IS61SF12832
IS61SF12836 ISSI
®
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
04/12/00
WRITE CYCLE TIMING
Single Write
DATAOUT
DATAIN
OE
CE2
CE2
CE
BW4-BW1
BWE
GW
A16-A0
ADV
ADSC
ADSP
CLK
WR1 WR2
Unselected
Burst Write
tKC
tKLtKH
tSS tSH
tAS tAH
tWS tWH
tWS tWH
WR3
tCES tCEH
tCES tCEH
tCES tCEH
CE2 and CE3 only sampled with ADSP or ADSC
CE1 Masks ADSP
Unselected with CE2
ADSC initiate Write
ADSP is blocked by CE1 inactive
tAVH
tAVS
ADV must be inactive for ADSP Write
WR1 WR2
tWS tWH
WR3
tWS tWH
High-Z
High-Z 1a 3a
tDS tDH
BW4-BW1 only are applied to first cycle of WR2
Write
2c 2d2b2a
IS61SF12832
IS61SF12836 ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
13
PRELIMINARY INFORMATION Rev. 00B
04/12/00
SNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
7.5 8 8.5 10 12
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tKC
(3)
Cycle Time 8.5 —10 —11 —15 —15 —ns
tKH
(3)
Clock High Time 3 —4—4.5 —4.5 —4.5 —ns
tKL
(3)
Clock Low Time 3 —4—4.5 —4.5 —4.5 —ns
tKQ
(3)
Clock Access Time —7.5 —8—8.5 —10 —12 ns
tKQX
(1)
Clock High to Output Invalid 2 —2—2—2—2—ns
tKQLZ
(1,2)
Clock High to Output Low-Z 0 —0—0—0—0—ns
tKQHZ
(1,2)
Clock High to Output High-Z 2 3.5 2 3.5 2 3.5 2 3.5 2 3.5 ns
tOEQ
(3)
Output Enable to Output Valid —3.5 —3.5 —3.5 —3.5 —5ns
tOELZ
(1,2)
Output Enable to Output Low-Z 0 —0—0—0—0—ns
tOEHZ
(1,2)
Output Disable to Output High-Z —3.5 —3.5 —3.5 —3.5 —3.5 ns
tAS
(3)
Address Setup Time 2 —2—2—2—4—ns
tSS
(3)
Address Status Setup Time 2 —2—2—2—4—ns
tCES
(3)
Chip Enable Setup Time 2 —2—2—2—4—ns
tAH
(3)
Address Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tSH
(3)
Address Status Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tCEH
(3)
Chip Enable Hold Time 0.5 —0.5 —0.5 —0.5 —1.5 —ns
tZZS ZZ Standby 2 —2—2—2—2—cyc
tZZREC ZZ Recovery 2 —2—2—2—2—cyc
Notes:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.
3. Tested with load in Figure 1.
IS61SF12832
IS61SF12836 ISSI
®
14
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
04/12/00
SNOOZE AND RECOVERY CYCLE TIMING
Single Read
High-Z
High-Z
DATA
OUT
DATA
IN
OE
CE2
CE2
CE
BW4-BW1
BWE
GW
A16-A0
ADV
ADSC
ADSP
CLK
RD1
1a
Read
Snooze with Data Retention
t
KC
t
KL
t
KH
t
SS
t
SH
t
AS
t
AH
RD2
t
CES
t
CEH
t
CES
t
CEH
t
CES
t
CEH
t
OEQ
t
OEQX
t
OELZ
t
KQLZ
t
KQ
t
OEHZ
t
KQX
t
KQHZ
ZZ
t
ZZS
t
ZZREC
IS61SF12832
IS61SF12836 ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
15
PRELIMINARY INFORMATION Rev. 00B
04/12/00
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Frequency Order Part Number Package
7.5 IS61SF12832-7.5TQ TQFP
IS61SF12832-7.5B PBGA
8 IS61SF12832-8TQ TQFP
IS61SF12832-8B PBGA
8.5 IS61SF12832-8.5TQ TQFP
IS61SF12832-8.5B PBGA
10 IS61SF12832-10TQ TQFP
IS61SF12832-10B PBGA
12 IS61SF12832-12TQ TQFP
IS61SF12832-12B PBGA
Industrial Range: –40°C to +85°C
Frequency Order Part Number Package
8 IS61SF12832-8TQI TQFP
8.5 IS61SF12832-8.5TQI TQFP
10 IS61SF12832-10TQI TQFP
12 IS61SF12832-12TQI TQFP
IS61SF12832
IS61SF12836 ISSI
®
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
04/12/00
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Frequency Order Part Number Package
7.5 IS61SF12836-7.5TQ TQFP
IS61SF12836-7.5B PBGA
8 IS61SF12836-8TQ TQFP
IS61SF12836-8B PBGA
8.5 IS61SF12836-8.5TQ TQFP
IS61SF12836-8.5B PBGA
10 IS61SF12836-10TQ TQFP
IS61SF12836-10B PBGA
12 IS61SF12836-12TQ TQFP
IS61SF12836-12B PBGA
Industrial Range: –40°C to +85°C
Frequency Order Part Number Package
8 IS61SF12836-8TQI TQFP
8.5 IS61SF12836-8.5TQI TQFP
10 IS61SF12836-10TQI TQFP
12 IS61SF12836-12TQI TQFP
ISSI
®
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
