BC857BLP4-7B - DIODES Incorporated

BC857BLP4

Document number: DS31361 Rev. 5 - 2 1 of 5

www.diodes.com February 2011

BC857BLP4

45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Die Construction

• Ultra-Small Leadless Surface Mount Package

• Ultra-low Profile (0.40mm max)

• Complementary NPN Type Available (BC847BLP4)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

Mechanical Data

• Case: DFN1006H4-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0008 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

BC857BLP4-7 F2 7 8 3,000

BC857BLP4-7B F2 7 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Device Schematic

Bottom View

F2 = Product Type Marking Code

DFN1006H4-3

Device Symbol

BC857BLP4-7 BC857BLP4-7B

Top View

Bar Denotes Base

and Emitter Side

Top View

Dot Denotes

Collector Side

F2F2

BC857BLP4

Document number: DS31361 Rev. 5 - 2 2 of 5

www.diodes.com February 2011

BC857BLP4

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO -50 V

Collector-Emitter Voltage VCEO -45 V

Emitter-Base Voltage VEBO -5.0 V

Collector Current IC -100 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @TA = 25°C PD 250 mW

Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25°C R

JA 500 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage V

(

)

CBO -50 — — V

IC = 10μA, IB = 0

Collector-Emitter Breakdown Voltage V

(

)

CEO -45 — — V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage V

(

)

EBO -5 — — V

IE = 1μA, IC = 0

DC Current Gain hFE 220 300 475 —

VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage VCE(SAT) — -90

-250 -300

-650 mV IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage VBE(SAT) —

— -700

-850 —

— mV IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage VBE(ON) -600

— -670

-710 -750

-820 mV VCE = -5.0V, IC = -2.0mA

VCE = -5.0V, IC = -10mA

Collector-Cutoff Current ICBO —

— —

— -15

-4.0 nA

µA VCB = -30V

VCB = -30V, TA = 150°C

Gain Bandwidth Product fT 100 — — MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Collector-Base Capacitance CCBO — 3.0 — pF

VCB = -10V, f = 1.0MHz

Notes: 4. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com

5. Short duration pulse test used to minimize self-heating effect.

BC857BLP4

Document number: DS31361 Rev. 5 - 2 3 of 5

www.diodes.com February 2011

BC857BLP4

100

0 255075100125150

DISSI

N (mW)

T , AMBIENT TEMPERA T URE (°C)

Fig. 1 Power Derating Curve

150

200

250

300

R = 500 C/W

-V , COLLECTOR-EMITTER VOLTAGE (V)

-I ,

LLE

(A)

Fig. 2 Typical Collector Current vs. Collector-Emitter V oltage

012345

100

I = -0.1mA

I = -0.2mA

I = -0.3mA

I = -0.4mA

I = -0.5mA

100

200

300

400

500

1 10 100 1,000

I , COLLECTOR CURRENT (A)

V , COLLECTOR-EMITTER

SATURATION VOLTAGE (V)

CE(SAT)

Fig. 4 Ty pical Collector-Emitter Saturation Voltage

vs. Collector Current

0.1

0.2

0.3

0.1 1 10 100

I , COLLECTOR CURRENT (A)

V , BASE-EMITTER TURN-ON VOLT AGE (V)

BE(ON)

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. C ollecto r Cu r r ent

0.2

0.4

0.6

0.8

1.0

0.1 1 10 100

Fig. 6 Typical Base-Emitter Saturation V oltage

vs. Collector Current

I , COLLECTOR CURRENT (A)

V , BASE-EMITTER SATURATION VOLTAGE (V)

BE(SAT)

0.1 1 10 100

BC857BLP4

Document number: DS31361 Rev. 5 - 2 4 of 5

www.diodes.com February 2011

BC857BLP4

Package Outline Dimensions

Suggested Pad Layout

DFN1006H4-3

Dim Min Max Typ

A ⎯0.40 ⎯

A1 0 0.05 0.02

b1 0.10 0.20 0.15

b2 0.45 0.55 0.50

D 0.95 1.075 1.00

E 0.55 0.675 0.60

e ⎯ ⎯ 0.35

L1 0.20 0.30 0.25

L2 0.20 0.30 0.25

L3 ⎯ ⎯ 0.40

All Dimensions in mm

Dimensions Value (in mm)

Z 1.1

G1 0.3

G2 0.2

X 0.7

X1 0.25

Y 0.4

C 0.7

Eb2

L1L3

BC857BLP4

Document number: DS31361 Rev. 5 - 2 5 of 5

www.diodes.com February 2011

BC857BLP4

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.