Agilent MGA-725M4 Low Noise
Amplifier with Bypass Switch In
Miniature Leadless Package
Data Sheet
Description
Agilent Technologies’s
MGA-725M4 is an economical,
easy-to-use GaAs MMIC Low
Noise Amplifier (LNA), which is
designed for an adaptive CDMA
receiver LNA and adaptive CDMA
transmit driver amplifier.
The MGA-725M4 features a typical
noise figure of 1.4 dB and 14.4 dB
associated gain from a single
stage, feedback FET amplifier.
The output is internally matched
to 50Ω. The input is optimally
internally matched for lowest
noise figure into 50Ω. The input
may be additionally externally
matched for low VSWR through
the addition of a single series
inductor. When set into the bypass
mode, both input and output are
internally matched to 50Ω.
Features
• Operating frequency:
0.1 GHz ~ 6.0 GHz
• Noise figure:
1.2 dB at 800 MHz
1.4 dB at 1900 MHz
• Gain:
17.5 dB at 800 MHz
15.7 dB at 1900 MHz
• Bypass switch on chip
Loss = typ 1.6 dB (Id < 5 µA)
IIP3 = +10 dBm
• Adjustable Input IP3:
+2 to +14.7 dBm
• Miniature package:
1.4 mm x 1.2 mm
2.7 V to 5.0 V operation
Applications
• CDMA (IS-95, J-STD-008) Receiver
LNA
• Transmit Driver Amp
• TDMA (IS-136) handsets
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and
Package Marking
The MGA-725M4 offers an
integrated solution of LNA with
adjustable IIP3. The IIP3 can be
fixed to a desired current level for
the receiver’s linearity require-
ments. The LNA has a bypass
switch function, which sets the
current to zero and provides low
insertion loss. The bypass mode
also boosts dynamic range when
high level signal is being received.
For the CDMA driver amplifier
applications, the MGA-725M4
provides suitable gain and linear-
ity to meet the ACPR requirement
when the handset transmits the
highest power. When transmitting
lower power, the MGA-725M4 can
be bypassed, saving the drawing
current.
The MGA-725M4 is a GaAs MMIC,
processed on Agilent’s cost
effective PHEMT (Pseudomorphic
High Electron Mobility Transistor).
It is housed in the MiniPak 1412
package. It is part of the Agilent
Technologies CDMAdvantage RF
chipset.
Simplified Schematic
GND GND
Output
& V
d
Control
GainFET
Input
&
V
ref
Ax
GROUND
INPUT GROUND
OUTPUT
Ax
2
MGA-725M4 Absolute Maximum Ratings[1]
Symbol Parameter Units Absolute Operation
Maximum Maximum
VdMaximum Input to Output Voltage V 5.5 4.2
Vgs Maximum Input to Ground DC Voltage V +.3 +.1
-5.5 -4.2
IdSupply Current mA 70 60
PdPower Dissipation[1,2] mW 300 250
Pin CW RF Input Power dBm +20 +13
TjJunction Temperature °C 170 150
TSTG Storage Temperature °C -65 to +150 -40 to +85
Thermal Resistance:[2]
θjc = 180°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Tcase = 25°C.
Electrical Specifications, Tc = +25°C, Zo = 50Ω, Id = 20 mA, Vd = 3V, unless noted.
Symbol Parameter and Test Condition Units Min. Typ. Max. σ
Vgs test[1] f = 2.0 GHz Vd = 3.0V (Vds = 2.5V) Id = 20 mA V -0.65 -0.51 -0.37 0.035
NF test[1] f = 2.0 GHz Vd = 3.0V (= Vds - Vgs)I
d = 20 mA dB 1.4 1.8 0.06
Ga test[1] f = 2.0 GHz Vd = 3.0V (= Vds - Vgs)I
d = 20 mA dB 13.5 14.4 15.5 0.42
IIP3 test[1] f = 2.04 GHz Vd = 3.0V (= Vds - Vgs)I
d = 20 mA dB 8.5 9.9 0.35
IL test[1,4] f = 2.0 GHz Vd = 3.0V (Vds = 0V, Vgs = -3V) Id = 0.0 mA dB 1.6 3.5 0.07
Ig test[1,4] f = 2.0 GHz Vd = 3.0V (Vds = 0V, Vgs = -3V) Id = 0.0 mA µA 2.0 2.0
Nfo[2] Minimum Noise Figure f = 1.0 GHz dB 1.2
As measured in Figure 2 Test Circuit f = 1.5 GHz 1.2
(Computed from s-parameter and noise f = 2.0 GHz 1.3
parameter performance as measured in a f = 2.5 GHz 1.3
50Ω impedance fixture) f = 4.0 GHz 1.4
f = 6.0 GHz 1.6
Gain[2] Associated Gain at Nfo f = 1.0 GHz dB 17.6
As measured in Figure 2 Test Circuit f = 1.5 GHz 16.6
(Computed from s-parameter and noise f = 2.0 GHz 15.7
parameter performance as measured in a f = 2.5 GHz 14.8
50Ω impedance fixture) f = 4.0 GHz 12.8
f = 6.0 GHz 10.6
P1dB[1] Output Power at 1 dB Gain Compression Id = 0 mA dBm 15.2
As measured in Figure 1 Test Circuit Id = 5 mA 3.4
Frequency = 2.04 GHz Id = 10 mA 9.14
Id = 20 mA 13.13 0.53
Id = 40 mA 15.25
Id = 60 mA 16.16
IIP3[1] Input Third Order Intercept Point Id = 0 mA dBm 35
As measured in Figure 1 Test Circuit Id = 5 mA 3.1
Frequency = 2.04 GHz Id = 10 mA 6.6
Id = 20 mA 9.9 0.35
Id = 40 mA 13.0
Id = 60 mA 14.7
RLin[1] Input Return Loss as measured in Fig. 1 f = 2.0 GHz dB -8.2 0.41
RLout[1] Output Return Loss as measured in Fig. 1 f = 2.0 GHz dB -15 1.3
ISOL[1] Isolation |S12|2 As measured in Fig. 2 f = 2.0 GHz dB -23.4 0.4
Notes:
1. Standard deviation and typical data as measured in the test circuit of Figure 1. Data based on 500 part sample size from 3 wafer lots.
2. Typical data computed from S-parameter and noise parameter data measured in a 50Ω system.
3. Vd = total device voltage = Vdg
4. Bypass mode voltages shown are used in production test. For source resistor biasing, Bypass mode is set by opening the source resistor.
3
MGA-725M4 Typical Performance
Frequency = 2.0 GHz, Tc = 25°C, Zo = 50Ω, Vd = 3V, Id = 20 mA unless stated otherwise. All data as measured in Figure 2
test system (input and output presented to 50Ω).
Figure 1. MGA-725M4 Production Test Circuit. Figure 2. MGA-725M4 50Ω Test Circuit for S, Noise, and Power
Parameters.
RF
Input
Vgs
47 pF
1000 pF
1.2 nH
27 nH 27 nH
2.7 nH
1000 pF
100 pF
Vds
RF
Output
Ax
100 pF
47 pF
RF
Input
Bias Tee
Vd
RF
Output
Ax
Vgs
Bias
Tee
ICM Fixture
0
0.5
1.0
3.0
2.5
2.0
1.5
012 34 65
NF
(dB)
FREQUENCY (GHz)
Figure 3. Noise Figure vs. Frequency and
Voltage.
2.7V
3.0V
3.3V
0
6
4
2
8
18
16
14
12
10
012 34 65
GAIN
(dB)
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency and Voltage.
2.7V
3.0V
3.3V
0
2
4
14
12
10
8
6
012 34 65
INPUT IP
3
(dB)
FREQUENCY (GHz)
Figure 5. Input Third Order Intercept Point
vs. Frequency and Voltage.
2.7V
3.0V
3.3V
012 34 65
NF
(dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency and
Temperature.
-40°C
+25°C
+85°C
0
1
4
3
2
18
012 34 65
GAIN
(dB)
FREQUENCY (GHz)
Figure 7. Gain vs. Frequency and Temperature.
-40°C
+25°C
+85°C
0
6
4
2
8
16
14
12
10
012 34 65
INPUT IP
3
(dBm)
FREQUENCY (GHz)
Figure 8. Input Third Order Intercept Point
vs. Frequency and Temperature.
-40°C
+25°C
+85°C
18
0
6
4
2
8
16
14
12
10
0
2
8
6
4
012 34 65
VSWR
(LNA)
FREQUENCY (GHz)
Figure 9. LNA on (Switch off) VSWR vs.
Frequency.
Input
Output
012 34 65
VSWR
(LNA)
FREQUENCY (GHz)
Figure 10. LNA off (Switch on) VSWR vs.
Frequency.
Input
Output
0
2
4
14
12
10
8
6
-5
-3
-4
0
-1
-2
012 34 65
INSERTION LOSS
(dB)
FREQUENCY (GHz)
Figure 11. Insertion Loss (Switch on) vs.
Frequency and Temperature.
-40°C
+25°C
+85°C
4
MGA-725M4 Typical Performance, continued
Frequency = 2.0 GHz, Tc = 25°C, Zo = 50Ω, Vd = 3V, Id = 20 mA unless stated otherwise. All data as measured in Figure 2
test system (input and output presented to 50Ω).
0
2
4
14
12
10
8
6
012 34 65
P1dB
(dBm)
FREQUENCY (GHz)
Figure 12. Output Power at 1 dB Compression
vs. Frequency and Voltage.
2.7V
3.0V
3.3V
0
2
4
14
12
10
8
6
012 34 65
P1dB
(dBm)
FREQUENCY (GHz)
Figure 13. Output Power at 1 dB Compression
vs. Frequency and Temperature.
2.7V
3.0V
3.3V
012 34 65
INPUT IP
3
(dBm)
FREQUENCY (GHz)
Figure 14. Input Third Order Intercept Point
vs. Frequency and Current.
10 mA
20 mA
40 mA
18
0
6
4
2
8
16
14
12
10
02040 8060
NF
(dB)
I
d
CURRENT (mA)
Figure 15. Noise Figure vs. Current and
Temperature.
-40°C
+25°C
+85°C
0
1
4
3
2
18
02040 8060
GAIN
(dB)
I
d
CURRENT (mA)
Figure 16. Associated Gain vs. Current and
Temperature.
-40°C
+25°C
+85°C
0
6
4
2
8
16
14
12
10
18
02040 8060
INPUT IP3
(dBm)
I
d
CURRENT (mA)
Figure 17. Input Third Intercept Point vs.
Current and Temperature.
-40°C
+25°C
+85°C
0
6
4
2
8
16
14
12
10
18
02040 8060
P1dB
(dBm)
I
d
CURRENT (mA)
Figure 18. Output Power at 1 dB Compression
vs. Current and Temperature.
-40°C
+25°C
+85°C
0
6
4
2
8
16
14
12
10
0
2
4
14
12
10
8
6
0 10203040 6050
VSWR
I
d
CURRENT (mA)
Figure 19. LNA on VSWR and Gamma Opt vs.
Current.
Input
Output
Gamma
0
0.40
0.20
1.00
0.80
0.60
0 10203040 6050
V
ref
(V)
I
d
CURRENT (mA)
Figure 20. Control Voltage vs. Current and
Temperature.
-40°C
+25°C
+85°C
5
MGA-725M4 Typical Scattering Parameters: Bypass Mode
Tc = 25°C, Vd = 3.0V, Id = 0 mA, Zo = 50Ω (test circuit of Figure 2)
Freq S11 S11 S21 S21 S12 S12 S22 S22 S11 S21 S12 S22
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB)
0.1 0.991 -11.1 0.175 74.9 0.175 75.5 0.943 -15.1 -0.08 -15.12 -15.16 -0.51
0.5 0.741 -44.1 0.592 37.9 0.593 38.1 0.624 -51.1 -2.61 -4.55 -4.54 -4.09
0.8 0.580 -5.8 0.710 22.8 0.709 22.9 0.470 -64.1 -4.74 -2.97 -2.99 -6.57
0.9 0.536 -61.8 0.733 18.9 0.732 19.0 0.429 -67.3 -5.41 -2.70 -2.71 -7.34
1.0 0.498 -64.6 0.751 15.4 0.750 15.6 0.400 -69.6 -6.05 -2.49 -2.50 -7.95
1.1 0.468 -66.8 0.764 12.5 0.763 12.4 0.371 -72.3 -6.60 -2.34 -2.35 -8.61
1.2 0.442 -69.2 0.775 9.7 0.774 9.8 0.346 -74.0 -7.09 -2.22 -2.22 -9.21
1.3 0.418 -70.9 0.783 7.1 0.783 7.3 0.328 -75.8 -7.58 -2.12 -2.13 -9.68
1.4 0.395 -72.6 0.793 4.7 0.791 5.0 0.309 -77.2 -8.06 -2.02 -2.04 -10.19
1.5 0.378 -74.7 0.797 2.7 0.796 2.7 0.293 -78.2 -8.45 -1.98 -1.98 -10.65
1.6 0.362 -76.0 0.799 0.5 0.800 0.7 0.281 -79.5 -8.84 -1.94 -1.94 -11.03
1.7 0.349 -77.6 0.805 -1.5 0.805 -1.3 0.267 -80.4 -9.14 -1.88 -1.89 -11.46
1.8 0.334 -78.9 0.809 -3.3 0.809 -3.1 0.258 -80.9 -9.53 -1.84 -1.84 -11.75
1.9 0.326 -79.9 0.811 -5.1 0.811 -5.1 0.247 -81.8 -9.74 -1.82 -1.82 -12.13
2.0 0.357 -85.4 0.826 -8.5 0.827 -8.3 0.243 -86.5 -8.96 -1.66 -1.65 -12.29
2.1 0.345 -86.0 0.826 -10.2 0.827 -10.0 0.238 -87.8 -9.25 -1.66 -1.65 -12.47
2.2 0.338 -86.6 0.825 -11.5 0.825 -11.5 0.230 -88.5 -9.43 -1.67 -1.67 -12.77
2.3 0.326 -87.7 0.826 -13.2 0.825 -12.9 0.228 -89.3 -9.73 -1.66 -1.67 -12.86
2.4 0.321 -87.9 0.825 -14.7 0.824 -14.4 0.222 -90.6 -9.87 -1.67 -1.69 -13.06
2.5 0.319 -88.9 0.825 -14.6 0.824 -14.6 0.218 -90.1 -9.92 -1.67 -1.68 -13.24
3.0 0.288 -93.8 0.820 -21.2 0.820 -21.4 0.206 -94.6 -10.81 -1.72 -1.72 -13.74
3.5 0.272 -97.0 0.816 -27.4 0.815 -27.4 0.198 -98.8 -11.31 -1.76 -1.77 -14.06
4.0 0.263 -101.4 0.810 -33.5 0.811 -33.6 0.195 -103.8 -11.59 -1.83 -1.82 -14.18
4.5 0.256 -106.1 0.807 -39.3 0.806 -39.2 0.192 -108.9 -11.84 -1.86 -1.88 -14.33
5.0 0.249 -110.9 0.800 -45.2 0.800 -45.2 0.190 -114.5 -12.07 -1.94 -1.93 -14.41
5.5 0.243 -114.8 0.793 -50.7 0.795 -50.7 0.191 -119.7 -12.30 -2.01 -2.00 -14.39
6.0 0.229 -117.1 0.781 -57.0 0.783 -57.0 0.260 -138.9 -12.81 -2.14 -2.13 -11.69
6.5 0.227 -125.3 0.774 -62.6 0.773 -62.6 0.256 -146.5 -12.88 -2.23 -2.23 -11.83
7.0 0.218 -130.1 0.764 -68.1 0.768 -67.9 0.252 -153.6 -13.25 -2.34 -2.30 -11.99
7.5 0.221 -137.5 0.758 -73.5 0.760 -73.2 0.243 -159.8 -13.11 -2.40 -2.39 -12.28
8.0 0.224 -144.2 0.749 -79.1 0.753 -78.9 0.230 -166.5 -12.98 -2.51 -2.46 -12.75
6
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 5 mA, ZO = 50Ω (test circuit of Figure 2)
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.10 0.83 -8 4.17 175 0.05 20 0.58 -7 12.4 -1.6 -4.7 18.7 -25.8
0.50 0.73 -24 4.32 164 0.06 13 0.51 -13 12.7 -2.7 -5.8 16.6 -24.4
0.80 0.71 -35 4.19 156 0.06 18 0.51 -19 12.4 -3.0 -5.9 16.5 -24.0
0.90 0.71 -39 4.14 153 0.06 19 0.50 -21 12.3 -3.0 -6.0 16.6 -23.9
1.00 0.69 -42 4.09 151 0.07 20 0.50 -23 12.2 -3.2 -6.0 16.5 -23.6
1.10 0.69 -45 4.03 148 0.07 22 0.50 -26 12.1 -3.3 -6.0 16.7 -23.3
1.20 0.68 -49 3.99 146 0.07 23 0.50 -28 12.0 -3.4 -6.0 16.7 -23.2
1.30 0.67 -52 3.94 143 0.07 23 0.50 -30 11.9 -3.5 -6.0 17.4 -23.0
1.40 0.67 -55 3.89 141 0.07 24 0.50 -32 11.8 -3.5 -6.1 17.3 -22.7
1.50 0.66 -59 3.83 139 0.08 25 0.50 -34 11.7 -3.6 -6.1 17.1 -22.5
1.60 0.66 -62 3.79 136 0.08 25 0.49 -36 11.6 -3.6 -6.2 16.9 -22.2
1.70 0.66 -65 3.74 134 0.08 26 0.49 -38 11.5 -3.7 -6.2 16.7 -21.9
1.80 0.66 -68 3.69 132 0.08 26 0.49 -40 11.3 -3.7 -6.2 16.5 -21.7
1.90 0.65 -71 3.63 130 0.08 26 0.49 -42 11.2 -3.7 -6.3 16.4 -21.5
2.00 0.65 -74 3.58 127 0.09 26 0.49 -44 11.1 -3.8 -6.3 16.2 -21.3
2.10 0.65 -77 3.54 125 0.09 26 0.48 -46 11.0 -3.8 -6.4 16.0 -21.1
2.20 0.64 -80 3.50 123 0.09 27 0.48 -48 10.9 -3.8 -6.5 15.9 -20.9
2.30 0.64 -82 3.43 121 0.09 26 0.48 -50 10.7 -3.9 -6.4 15.7 -20.6
2.40 0.64 -85 3.39 119 0.10 26 0.47 -52 10.6 -3.9 -6.5 15.5 -20.4
2.50 0.64 -88 3.35 117 0.10 26 0.47 -54 10.5 -3.9 -6.6 15.4 -20.3
3.00 0.63 -100 3.12 107 0.11 24 0.46 -62 9.9 -4.0 -6.8 14.7 -19.5
3.50 0.62 -112 2.91 98 0.12 22 0.44 -70 9.3 -4.2 -7.1 14.0 -18.8
4.00 0.61 -123 2.72 90 0.12 20 0.43 -78 8.7 -4.3 -7.4 13.5 -18.3
4.50 0.60 -133 2.55 82 0.13 18 0.42 -85 8.1 -4.4 -7.6 13.0 -17.9
5.00 0.60 -142 2.40 74 0.13 15 0.40 -91 7.6 -4.5 -7.9 12.6 -17.5
5.50 0.59 -151 2.27 67 0.14 13 0.39 -97 7.1 -4.6 -8.2 12.2 -17.2
6.00 0.57 -160 2.15 59 0.14 9 0.38 -109 6.6 -4.9 -8.4 11.8 -17.0
6.50 0.58 -162 1.93 49 0.14 7 0.38 -123 5.7 -4.8 -8.5 11.0 -17.3
7.00 0.56 -174 1.88 46 0.14 5 0.36 -128 5.5 -5.0 -8.8 10.0 -16.9
7.50 0.53 175 1.83 40 0.15 3 0.36 -133 5.2 -5.5 -8.9 8.9 -16.6
8.00 0.54 170 1.77 34 0.15 1 0.35 -134 4.9 -5.4 -9.1 8.6 -16.4
Freq NFmin GAMMA OPT Rn Ga
(GHz) (dB) Mag Ang (dB)
0.8 1.24 0.40 30 16.5 16.0
0.9 1.26 0.40 34 14.5 15.3
1.0 1.34 0.36 42 13.9 15.0
1.5 1.42 0.33 53 13.0 14.4
1.8 1.45 0.30 58 12.6 14.0
1.9 1.48 0.29 62 12.3 13.8
2.0 1.53 0.26 61 11.9 13.3
2.1 1.56 0.24 62 11.6 13.2
2.2 1.58 0.23 68 11.3 13.0
2.3 1.58 0.24 69 11.4 12.9
2.4 1.58 0.23 69 10.9 12.8
2.5 1.61 0.23 76 10.7 12.6
3.0 1.63 0.23 84 10.1 12.1
3.5 1.69 0.24 101 9.5 11.5
4.0 1.69 0.26 108 9.1 11.0
4.5 1.74 0.26 122 8.8 10.3
5.0 1.80 0.27 134 7.8 9.8
5.5 1.81 0.28 144 7.2 9.3
6.0 1.89 0.32 156 6.4 8.7
7
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 10 mA, ZO = 50Ω (test circuit of Figure 2)
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.10 0.79 -9 5.57 174 0.05 19 0.48 -9 14.9 -2.0 -6.4 20.7 -26.6
0.50 0.68 -26 5.68 163 0.05 13 0.40 -15 15.1 -3.4 -8.1 18.2 -25.4
0.80 0.65 -39 5.47 154 0.06 16 0.39 -21 14.8 -3.7 -8.2 17.9 -24.9
0.90 0.66 -43 5.40 152 0.06 18 0.39 -24 14.6 -3.7 -8.2 18.0 -24.7
1.00 0.64 -46 5.33 149 0.06 19 0.39 -26 14.5 -3.9 -8.3 17.8 -24.6
1.10 0.64 -50 5.25 147 0.06 20 0.39 -28 14.4 -3.9 -8.3 17.8 -24.4
1.20 0.63 -54 5.18 144 0.06 21 0.38 -31 14.3 -4.1 -8.3 17.8 -24.2
1.30 0.63 -58 5.10 142 0.06 21 0.38 -33 14.2 -4.1 -8.4 17.9 -24.0
1.40 0.62 -61 5.03 139 0.07 22 0.38 -35 14.0 -4.2 -8.4 17.9 -23.7
1.50 0.62 -64 4.95 137 0.07 23 0.38 -37 13.9 -4.2 -8.4 18.2 -23.5
1.60 0.62 -68 4.88 134 0.07 23 0.38 -39 13.8 -4.2 -8.5 18.6 -23.3
1.70 0.61 -71 4.81 132 0.07 23 0.37 -42 13.6 -4.3 -8.5 18.4 -23.1
1.80 0.61 -74 4.73 130 0.07 24 0.37 -44 13.5 -4.3 -8.6 18.2 -23.0
1.90 0.61 -77 4.65 128 0.07 24 0.37 -46 13.4 -4.3 -8.6 18.0 -22.7
2.00 0.60 -81 4.58 125 0.07 24 0.37 -48 13.2 -4.4 -8.7 17.9 -22.6
2.10 0.60 -84 4.51 123 0.08 24 0.37 -50 13.1 -4.4 -8.7 17.7 -22.4
2.20 0.60 -87 4.45 121 0.08 24 0.36 -51 13.0 -4.5 -8.8 17.6 -22.3
2.30 0.60 -89 4.36 119 0.08 24 0.36 -54 12.8 -4.5 -8.8 17.5 -22.2
2.40 0.59 -92 4.29 117 0.08 24 0.36 -55 12.7 -4.5 -8.8 17.3 -21.9
2.50 0.59 -95 4.23 115 0.08 24 0.36 -57 12.5 -4.5 -8.9 17.2 -21.8
3.00 0.59 -108 3.91 105 0.09 23 0.35 -66 11.8 -4.6 -9.1 16.5 -21.2
3.50 0.58 -119 3.62 96 0.09 23 0.34 -73 11.2 -4.7 -9.3 15.9 -20.6
4.00 0.57 -130 3.36 88 0.10 22 0.34 -81 10.5 -4.8 -9.5 15.4 -20.3
4.50 0.57 -140 3.13 80 0.10 21 0.33 -88 9.9 -4.9 -9.6 14.9 -19.9
5.00 0.57 -149 2.93 73 0.11 20 0.33 -94 9.3 -5.0 -9.8 14.4 -19.5
5.50 0.56 -157 2.76 66 0.11 20 0.32 -100 8.8 -5.1 -9.9 14.0 -19.2
6.00 0.55 -166 2.58 57 0.11 17 0.32 -113 8.2 -5.1 -9.9 12.5 -18.9
6.50 0.55 -172 2.30 48 0.11 17 0.32 -122 7.2 -5.3 -9.9 10.5 -19.1
7.00 0.54 -179 2.25 45 0.12 17 0.31 -133 7.0 -5.4 -10.1 10.3 -18.4
7.50 0.50 170 2.19 39 0.13 16 0.31 -137 6.8 -6.0 -10.1 9.6 -17.9
8.00 0.51 164 2.09 33 0.13 15 0.31 -139 6.4 -5.8 -10.1 9.3 -17.5
Freq NFmin GAMMA OPT Rn Ga
(GHz) (dB) Mag Ang (dB)
0.8 1.20 0.35 36 14.5 17.5
0.9 1.20 0.35 39 11.9 16.6
1.0 1.24 0.34 48 11.5 16.5
1.5 1.28 0.29 60 10.5 15.9
1.8 1.30 0.26 64 10.2 15.4
1.9 1.31 0.24 68 10.1 15.3
2.0 1.34 0.20 66 9.5 14.6
2.1 1.36 0.19 68 9.1 14.4
2.2 1.38 0.19 74 9.0 14.2
2.3 1.40 0.19 76 9.0 14.2
2.4 1.40 0.18 75 8.7 13.9
2.5 1.40 0.18 83 8.6 13.9
3.0 1.42 0.19 91 8.1 13.4
3.5 1.47 0.20 109 7.7 12.6
4.0 1.50 0.22 117 7.3 12.1
4.5 1.54 0.23 130 7.2 11.4
5.0 1.61 0.23 144 6.6 10.9
5.5 1.64 0.25 153 6.1 10.4
6.0 1.72 0.29 167 5.7 9.8
8
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 20 mA, ZO = 50Ω (test circuit of Figure 2)
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.1 0.75 -11 6.78 174 0.04 12 0.39 -11 16.6 -2.5 -8.1 20.8 -27.1
0.5 0.62 -28 6.81 162 0.05 12 0.30 -16 16.7 -4.1 -10.4 19.1 -26.2
0.8 0.60 -42 6.53 153 0.05 16 0.30 -23 16.3 -4.4 -10.5 18.7 -25.8
0.9 0.60 -46 6.44 151 0.05 17 0.30 -26 16.2 -4.4 -10.5 18.8 -25.7
1.0 0.59 -50 6.34 148 0.05 18 0.30 -28 16.0 -4.6 -10.6 18.6 -25.5
1.1 0.58 -54 6.24 145 0.05 19 0.30 -31 15.9 -4.7 -10.6 18.5 -25.4
1.2 0.58 -58 6.14 143 0.06 20 0.29 -33 15.8 -4.8 -10.6 18.4 -25.0
1.3 0.57 -62 6.05 140 0.06 21 0.29 -36 15.6 -4.8 -10.7 18.4 -24.9
1.4 0.57 -65 5.95 138 0.06 21 0.29 -38 15.5 -4.9 -10.7 18.3 -24.7
1.5 0.57 -69 5.85 135 0.06 22 0.29 -40 15.3 -4.9 -10.8 18.2 -24.6
1.6 0.57 -72 5.75 133 0.06 23 0.29 -42 15.2 -4.9 -10.8 18.2 -24.3
1.7 0.56 -76 5.66 130 0.06 23 0.29 -45 15.0 -5.0 -10.9 18.1 -24.2
1.8 0.56 -79 5.56 128 0.06 23 0.28 -47 14.9 -5.0 -10.9 18.0 -24.0
1.9 0.56 -82 5.46 126 0.06 23 0.28 -49 14.7 -5.0 -11.0 18.0 -23.9
2.0 0.56 -86 5.36 124 0.07 24 0.28 -51 14.6 -5.1 -11.0 17.9 -23.6
2.1 0.55 -89 5.27 122 0.07 24 0.28 -53 14.4 -5.1 -11.1 17.8 -23.5
2.2 0.55 -92 5.19 119 0.07 24 0.28 -55 14.3 -5.1 -11.2 17.7 -23.3
2.3 0.55 -95 5.08 117 0.07 24 0.28 -57 14.1 -5.2 -11.2 17.5 -23.2
2.4 0.55 -98 4.99 115 0.07 24 0.28 -58 14.0 -5.2 -11.2 17.4 -23.1
2.5 0.55 -100 4.91 113 0.07 24 0.27 -60 13.8 -5.2 -11.2 17.3 -23.0
3.0 0.54 -113 4.51 104 0.08 24 0.27 -68 13.1 -5.3 -11.4 16.6 -22.4
3.5 0.54 -125 4.15 95 0.08 24 0.26 -76 12.4 -5.4 -11.6 15.7 -21.9
4.0 0.53 -135 3.84 87 0.08 24 0.26 -83 11.7 -5.5 -11.6 14.9 -21.5
4.5 0.53 -145 3.56 79 0.09 24 0.26 -89 11.0 -5.6 -11.7 14.1 -21.1
5.0 0.52 -153 3.33 72 0.09 24 0.26 -95 10.4 -5.6 -11.8 13.4 -20.7
5.5 0.52 -162 3.12 65 0.10 24 0.26 -100 9.9 -5.8 -11.8 12.7 -20.4
6.0 0.51 -169 2.91 57 0.10 24 0.26 -114 9.3 -5.8 -11.6 12.0 -19.9
6.5 0.50 -176 2.58 49 0.10 24 0.26 -124 8.2 -6.0 -11.7 10.6 -19.6
7.0 0.49 178 2.54 45 0.11 24 0.26 -135 8.1 -6.2 -11.6 10.4 -19.4
7.5 0.46 166 2.47 39 0.12 24 0.27 -134 7.9 -6.8 -11.4 9.9 -18.8
8.0 0.47 161 2.35 33 0.12 23 0.27 -138 7.4 -6.6 -11.3 9.6 -18.3
Freq NFmin GAMMA OPT Rn Ga
(GHz) (dB) Mag Ang (dB)
0.8 1.16 0.34 40 12.1 18.0
0.9 1.18 0.33 46 12.0 17.6
1.0 1.19 0.32 50 11.5 17.6
1.5 1.19 0.28 60 10.7 16.6
1.8 1.24 0.23 69 10.0 16.0
1.9 1.26 0.22 73 9.6 15.8
2.0 1.28 0.18 72 9.8 15.7
2.1 1.31 0.17 75 9.3 15.4
2.2 1.31 0.15 81 9.2 15.2
2.3 1.31 0.16 83 9.1 15.1
2.4 1.32 0.16 81 8.9 14.9
2.5 1.33 0.16 89 8.7 14.8
3.0 1.32 0.18 97 8.3 14.2
3.5 1.36 0.18 116 8.1 13.5
4.0 1.40 0.20 123 7.9 12.8
4.5 1.43 0.22 136 7.9 12.2
5.0 1.51 0.23 150 7.7 11.6
5.5 1.55 0.25 158 7.6 11.1
6.0 1.62 0.29 172 7.7 10.6
9
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 40 mA, ZO = 50Ω (test circuit of Figure 2)
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.1 0.75 -11 7.39 173 0.04 18 0.35 -12 17.4 -2.5 -9.2 22.1 -27.7
0.5 0.62 -29 7.38 162 0.05 11 0.26 -16 17.4 -4.1 -11.8 19.8 -26.7
0.8 0.60 -43 7.06 153 0.05 15 0.25 -23 17.0 -4.4 -12.0 19.4 -26.6
0.9 0.60 -47 6.95 150 0.05 16 0.25 -26 16.8 -4.4 -12.0 19.4 -26.4
1.0 0.59 -51 6.84 147 0.05 17 0.25 -28 16.7 -4.6 -12.0 19.1 -26.2
1.1 0.58 -55 6.73 145 0.05 18 0.25 -31 16.6 -4.7 -12.1 19.0 -26.0
1.2 0.58 -60 6.62 142 0.05 19 0.25 -33 16.4 -4.8 -12.1 18.9 -25.8
1.3 0.57 -63 6.51 140 0.05 20 0.25 -36 16.3 -4.8 -12.1 18.8 -25.7
1.4 0.57 -67 6.40 137 0.05 21 0.25 -38 16.1 -4.9 -12.2 18.7 -25.5
1.5 0.57 -71 6.29 135 0.05 22 0.25 -40 16.0 -4.9 -12.2 18.6 -25.4
1.6 0.57 -74 6.18 132 0.06 22 0.24 -42 15.8 -4.9 -12.3 18.5 -25.2
1.7 0.56 -78 6.07 130 0.06 23 0.24 -45 15.7 -5.0 -12.3 18.4 -25.0
1.8 0.56 -81 5.96 128 0.06 23 0.24 -47 15.5 -5.0 -12.4 18.3 -24.9
1.9 0.56 -85 5.85 125 0.06 24 0.24 -49 15.3 -5.0 -12.4 18.2 -24.6
2.0 0.56 -88 5.74 123 0.06 24 0.24 -51 15.2 -5.1 -12.4 18.1 -24.4
2.1 0.55 -91 5.64 121 0.06 24 0.24 -53 15.0 -5.1 -12.5 17.9 -24.3
2.2 0.55 -94 5.54 119 0.06 24 0.23 -54 14.9 -5.1 -12.6 17.7 -24.3
2.3 0.55 -97 5.43 117 0.06 25 0.24 -56 14.7 -5.2 -12.6 17.6 -24.2
2.4 0.55 -100 5.34 115 0.06 25 0.24 -58 14.5 -5.2 -12.6 17.4 -24.0
2.5 0.55 -103 5.24 113 0.06 25 0.23 -60 14.4 -5.2 -12.7 17.3 -23.9
3.0 0.54 -115 4.79 103 0.07 26 0.23 -67 13.6 -5.3 -12.8 16.6 -23.2
3.5 0.54 -127 4.40 95 0.07 26 0.23 -74 12.9 -5.4 -12.9 15.7 -22.7
4.0 0.53 -137 4.06 87 0.08 26 0.23 -81 12.2 -5.5 -12.9 14.9 -22.4
4.5 0.53 -147 3.77 79 0.08 27 0.23 -86 11.5 -5.6 -13.0 14.2 -21.9
5.0 0.52 -155 3.52 72 0.08 27 0.23 -91 10.9 -5.6 -12.9 13.5 -21.5
5.5 0.52 -164 3.30 65 0.09 28 0.23 -96 10.4 -5.8 -12.9 12.8 -21.1
6.0 0.51 -172 3.06 57 0.09 27 0.23 -112 9.7 -5.8 -12.7 12.2 -20.7
6.5 0.50 -176 2.73 49 0.09 25 0.23 -125 8.7 -6.0 -12.7 10.8 -20.8
7.0 0.49 177 2.69 46 0.10 28 0.23 -132 8.6 -6.2 -12.6 10.7 -19.9
7.5 0.46 165 2.61 40 0.11 28 0.24 -130 8.3 -6.8 -12.3 10.2 -19.3
8.0 0.47 160 2.49 34 0.12 27 0.25 -134 7.9 -6.6 -12.1 9.9 -18.7
Freq NFmin GAMMA OPT Rn Ga
(GHz) (dB) Mag Ang (dB)
0.8 1.23 0.36 33 14.7 19.0
0.9 1.24 0.35 42 12.4 18.2
1.0 1.27 0.35 50 11.5 18.2
1.5 1.28 0.28 63 10.3 17.3
1.8 1.32 0.25 68 10.1 16.7
1.9 1.32 0.24 72 9.9 16.4
2.0 1.37 0.22 72 9.4 16.2
2.1 1.40 0.20 74 9.2 16.0
2.2 1.40 0.21 79 9.1 15.8
2.3 1.40 0.20 82 9.0 15.7
2.4 1.40 0.20 81 8.7 15.5
2.5 1.42 0.20 88 8.6 15.4
3.0 1.43 0.22 97 8.0 14.7
3.5 1.47 0.22 115 7.5 14.0
4.0 1.51 0.24 124 7.0 13.3
4.5 1.56 0.25 138 6.7 12.7
5.0 1.65 0.26 151 6.1 12.1
5.5 1.64 0.29 160 5.6 11.6
6.0 1.77 0.32 173 5.3 11.1
10
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 60 mA, ZO = 50Ω (test circuit of Figure 2)
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB) (dB)
0.1 0.76 -11 7.09 174 0.04 17 0.35 -11 17.0 -2.4 -9.1 21.7 -28.0
0.5 0.64 -29 7.08 162 0.05 10 0.26 -15 17.0 -3.9 -11.6 19.5 -26.9
0.8 0.61 -42 6.78 153 0.05 14 0.26 -21 16.6 -4.2 -11.7 19.1 -26.7
0.9 0.62 -47 6.69 151 0.05 15 0.26 -24 16.5 -4.2 -11.8 19.0 -26.6
1.0 0.60 -50 6.58 148 0.05 17 0.26 -26 16.4 -4.4 -11.8 18.8 -26.4
1.1 0.60 -55 6.48 145 0.05 18 0.26 -28 16.2 -4.5 -11.8 18.7 -26.4
1.2 0.59 -59 6.38 143 0.05 19 0.26 -31 16.1 -4.6 -11.8 18.6 -26.2
1.3 0.59 -63 6.28 140 0.05 19 0.26 -33 16.0 -4.6 -11.9 18.5 -26.0
1.4 0.58 -66 6.17 137 0.05 20 0.25 -35 15.8 -4.7 -11.9 18.3 -25.8
1.5 0.58 -70 6.07 135 0.05 21 0.25 -37 15.7 -4.7 -11.9 18.2 -25.7
1.6 0.58 -73 5.96 133 0.05 21 0.25 -39 15.5 -4.7 -12.0 18.1 -25.5
1.7 0.58 -77 5.86 130 0.05 22 0.25 -41 15.4 -4.8 -12.0 18.0 -25.4
1.8 0.57 -80 5.76 128 0.06 22 0.25 -43 15.2 -4.8 -12.1 17.9 -25.2
1.9 0.57 -84 5.66 126 0.06 23 0.25 -45 15.1 -4.8 -12.1 17.8 -25.0
2.0 0.57 -87 5.56 123 0.06 23 0.25 -47 14.9 -4.9 -12.1 17.7 -24.9
2.1 0.57 -90 5.46 121 0.06 24 0.25 -48 14.7 -4.9 -12.2 17.5 -24.7
2.2 0.57 -93 5.36 119 0.06 24 0.24 -50 14.6 -5.0 -12.3 17.4 -24.6
2.3 0.57 -96 5.26 117 0.06 24 0.24 -52 14.4 -5.0 -12.3 17.2 -24.4
2.4 0.56 -99 5.17 115 0.06 24 0.24 -53 14.3 -5.0 -12.3 17.1 -24.3
2.5 0.56 -102 5.07 113 0.06 24 0.24 -55 14.1 -5.0 -12.3 17.0 -24.2
3.0 0.56 -115 4.65 103 0.07 25 0.24 -62 13.3 -5.1 -12.5 16.2 -23.7
3.5 0.55 -126 4.27 95 0.07 26 0.24 -69 12.6 -5.2 -12.5 15.4 -23.2
4.0 0.54 -137 3.95 87 0.07 26 0.24 -75 11.9 -5.3 -12.6 14.6 -22.9
4.5 0.54 -146 3.67 79 0.08 27 0.24 -80 11.3 -5.4 -12.6 13.9 -22.4
5.0 0.54 -155 3.42 72 0.08 28 0.24 -85 10.7 -5.4 -12.5 13.3 -22.0
5.5 0.53 -163 3.21 65 0.08 29 0.24 -90 10.1 -5.5 -12.5 12.7 -21.6
6.0 0.52 -171 2.98 57 0.09 28 0.24 -106 9.5 -5.7 -12.4 11.9 -21.2
6.5 0.51 -177 2.66 49 0.09 27 0.25 -118 8.5 -5.8 -12.1 10.7 -21.3
7.0 0.50 177 2.63 45 0.10 30 0.24 -125 8.4 -6.0 -12.4 10.5 -20.4
7.5 0.47 165 2.55 39 0.10 30 0.25 -130 8.1 -6.6 -12.0 10.0 -19.7
8.0 0.48 161 2.43 33 0.11 30 0.26 -127 7.7 -6.4 -11.8 9.8 -19.2
Freq NFmin GAMMA OPT Rn Ga
(GHz) (dB) Mag Ang (dB)
0.8 1.47 0.38 42 19.0 18.8
0.9 1.47 0.38 48 17.8 18.2
1.0 1.51 0.38 49 17.3 18.1
1.5 1.55 0.34 60 16.1 17.4
1.8 1.56 0.31 64 14.9 17.0
1.9 1.59 0.30 68 14.6 16.8
2.0 1.62 0.29 69 14.4 16.2
2.1 1.65 0.28 71 14.3 16.0
2.2 1.66 0.28 76 14.2 15.8
2.3 1.67 0.27 78 14.1 15.7
2.4 1.67 0.27 79 13.9 15.5
2.5 1.70 0.27 84 13.6 15.4
3.0 1.70 0.27 96 12.9 14.7
3.5 1.76 0.29 113 12.7 14.0
4.0 1.83 0.31 124 12.4 13.4
4.5 1.90 0.32 137 12.2 12.7
5.0 2.00 0.34 150 11.8 12.2
5.5 2.05 0.36 159 11.7 11.7
6.0 2.19 0.39 173 11.6 11.2
11
MGA-725M4 Typical Scattering Parameters—Zero Bias
TC = 25°C, Vd = 0V, Id = 0 mA, ZO = 50Ω (test circuit of Figure 2)
Freq S11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Isolation
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (dB) (dB) (dB) (dB)
0.1 0.07 -116 0.04 10 0.04 10 0.83 179 -27.3 -23.2 -1.6 -27.3
0.5 0.31 -136 0.06 28 0.06 29 0.85 176 -24.7 -10.2 -1.4 -24.7
0.8 0.42 -143 0.07 30 0.07 30 0.85 174 -22.9 -7.5 -1.4 -22.9
1.2 0.52 -154 0.09 28 0.09 28 0.85 171 -21.4 -5.6 -1.4 -21.4
1.6 0.58 -163 0.09 26 0.09 26 0.85 168 -20.5 -4.7 -1.4 -20.5
2.0 0.62 -170 0.10 24 0.10 25 0.85 165 -20.0 -4.2 -1.4 -19.9
2.4 0.64 -176 0.11 24 0.11 24 0.85 162 -19.5 -3.8 -1.4 -19.5
2.8 0.66 178 0.11 23 0.11 23 0.85 159 -19.2 -3.6 -1.4 -19.1
3.2 0.67 173 0.12 23 0.12 23 0.85 156 -18.7 -3.4 -1.4 -18.7
3.6 0.69 168 0.12 23 0.12 23 0.85 153 -18.3 -3.3 -1.5 -18.3
3.8 0.69 166 0.12 23 0.13 23 0.85 151 -18.1 -3.2 -1.5 -18.1
4.0 0.69 163 0.13 23 0.13 23 0.84 149 -17.9 -3.2 -1.5 -17.9
4.4 0.70 159 0.13 22 0.13 23 0.84 146 -17.5 -3.1 -1.5 -17.5
4.8 0.71 154 0.14 22 0.14 22 0.84 143 -17.0 -3.0 -1.5 -17.0
5.2 0.72 150 0.15 22 0.15 22 0.84 139 -16.5 -2.9 -1.5 -16.5
5.6 0.72 145 0.16 20 0.16 21 0.83 135 -16.0 -2.8 -1.6 -16.0
6.0 0.72 142 0.16 17 0.16 17 0.83 135 -15.7 -2.9 -1.6 -15.7
MiniPak Package Outline Drawing
Ordering Information
Part Number Devices Per Container Container
MGA-725M4-TR1 3000 7” Reel
MGA-725M4-TR2 10000 13”Reel
MGA-725M4-BLK 100 antistatic bag
Solder Pad Dimensions
1.44 (0.058)
1.40 (0.056)
1.20 (0.048)
1.16 (0.046)
0.70 (0.030) MAX
1.12 (0.045)
1.08 (0.043)
GROUND
Note: Pad orientation is shown as viewed from to
p
of
p
ackage.
INPUT GROUND
OUTPUT
0.82 (0.033)
0.78 (0.031)
0.32 (0.013)
0.28 (0.011)
-0.07 (-0.003)
-0.03 (-0.001)
0.00
-0.07 (-0.003)
-0.03 (-0.001)
0.42 (0.017)
0.38 (0.015)
0.92 (0.037)
0.88 (0.035)
1.32 (0.053)
1.28 (0.051)
0.00
12
Package 4T—MiniPak 1412
Device Orientation
Tape Dimensions
For Outline 4T
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
AA
AA
AA
AA
Note: “AA” represents package marking code. Package marking is right
side up with carrier tape perforations at top. Conforms to Electronic
Industries RS-481, “Taping of Surface Mounted Components for Automated
Placement.” Standard quantity is 3,000 devices per reel.
P
P
0
P
2
FW
C
D
1
D
E
A
0
5° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
1.40 ± 0.05
1.63 ± 0.05
0.80 ± 0.05
4.00 ± 0.10
0.80 ± 0.05
0.055 ± 0.002
0.064 ± 0.002
0.031 ± 0.002
0.157 ± 0.004
0.031 ± 0.002
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 + 0.30 - 0.10
0.254 ± 0.02 0.315 + 0.012 - 0.004
0.010 ± 0.001
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS C
T
t
5.40 ± 0.10
0.062 ± 0.001 0.213 ± 0.004
0.002 ± 0.00004
COVER TAPE
13
Application Information:
Designing with the
MGA-725M4 RFIC
Amplifier/Bypass Switch
Description
The MGA-725M4 is a single stage
GaAs RFIC amplifier with an
integrated bypass switch. A
functional diagram of the
MGA-725M4 is shown in Figure 1.
RF
OUTPUT
AMPLIFIER
BYPASS MODE
RF
INPUT
Figure 1. MGA-725M4 Functional Diagram.
The MGA-725M4 is designed for
receivers and transmitters operat-
ing from 100 MHz to 6 GHz with
an emphasis on 800 MHz and
1.9 GHz CDMA applications. The
MGA-725M4 combines low noise
performance with high linearity to
make it especially advantageous
for use in receiver front-ends.
The purpose of the switch feature
is to prevent distortion of high
signal levels in receiver applica-
tions by bypassing the amplifier
altogether. The bypass switch can
be thought of as a 1-bit digital
AGC circuit that not only prevents
distortion by bypassing the
MGA-725M4 amplifier, but also
reduces front-end system gain by
approximately 16 dB to avoid
overdriving subsequent stages in
the receiver such as the mixer.
An additional feature of the
MGA-725M4 is the ability to
externally set device current to
balance output power capability
and high linearity with low DC
power consumption. The adjust-
able current feature of the
MGA-725M4 allows it to deliver
output power levels in excess of
+15 dBm (P1dB), thus extending its
use to other system application
such as transmitter driver stages.
The MGA-725M4 is designed to
operate from a +3-volt power
supply and is contained in minia-
ture Minipak 1412 package to
minimize printed circuit board
space.
LNA Application
For low noise amplifier applica-
tions, the MGA-725M4 is typically
biased in the 10–20 mA range.
Minimum NF occurs at 20 mA as
noted in the performance curve of
NFmin vs Id. Biasing at currents
significantly less than 10 mA is not
recommended since the character-
istics of the device begin to
change very rapidly at lower
currents.
The MGA-725M4 is matched
internally for low NF. Over a
current range of 10–30 mA, the
magnitude of Gopt at 1900 MHz is
typically less than 0.25 and
additional impedance matching
would only net about 0.1 dB
improvement in noise figure.
Without external matching, the
input return loss for the
MGA-725M4 is approximately 5 dB
at 1900 MHz. If desired, a small
amount of NF can be traded off
for a significant improvement in
input match. For example, the
addition of a series inductance of
2.7 to 3.9 nH at the input of the
MGA-725M4 will improve the
input return loss to grater than
10 dB with a sacrifice in NF of
only 0.1 dB.
The output of the MGA-725M4 is
internally matched to provide an
output SWR of approximately 2:1
at 1900 MHz. Input and output
matches both improve at higher
frequencies.
Driver Amplifier Applications
The flexibility of the adjustable
current feature makes the
MGA-725M4 suitable for use in
transmitter driver stages. Biasing
the amplifier at 40–50 mA enables
it to deliver an output power at
1 dB gain compression of up to
+16 dBm. Power efficiency in the
unsaturated driver mode is on the
order of 30%. If operated as a
saturated amplifier, both output
power and efficiency will increase.
Since the MGA-725M4 is internally
matched for low noise figure, it
may be desirable to add external
impedance matching at the input
to improve the power match for
driver applications. Since the
reactive part of the input of the
device impedance is capacitive, a
series inductor at the input is
often all that is needed to provide
a suitable match for many applica-
tions. For 1900 MHz circuits, a
series inductance of 3.9 nH will
match the input to return loss of
approximately 13 dB. As in the
case of low noise bias levels, the
output of the MGA-725M4 is
already well matched to 50Ω and
no additional matching is needed
for most applications.
When used for driver stage
applications, the bypass switch
feature of the MGA-725M4 can be
used to shut down the amplifier to
conserve supply current during
non-transmit period. Supply
current in the bypass stage is
nominally 2 mA.
Biasing
Biasing the MGA-725M4 is similar
to biasing a discrete GaAs FET.
Passive biasing of the MGA-725M4
may be accomplished by either of
two conventional methods, either
by biasing the gate or by using a
source resistor.
Gate Bias
Using this method, Pins 1 and 3 of
the amplifier are DC grounded and
a negative bias voltage is applied
to Pin 2 as shown in figure 2. This
method has the advantage of not
only DC, but also RF grounding
both of the ground pins of the
MGA-725M4. Direct RF grounding
14
of device’s ground pins results in
slightly improved performance
while decreasing potential insta-
bilities, especially at higher
frequencies. The disadvantage is
that a negative supply voltage is
required.
OUTPUT
& Vd
INPUT
Vref
Figure 2. Gate Bias Method.
DC access to the input terminal
for applying the gate bias voltage
can be made through either a RF
or high impedance transmission
line as indicated in Figure 2.
The device current, Id, is deter-
mined by the voltage at Vref (Pin 2)
with respect to ground. A plot of
typical Id vs Vref is shown in
Figure 3. Maximum device current
(approximately 65 mA) occurs at
Vref = 0.
The device current may also be
estimated from the following
equation:
Vref = 0.11√ Id – 0.96
where Id is in mA and Vref is in
volts.
0
10
50
40
30
20
-0.8 -0.7 -0.6 -0.5 -0.4 -0.2-0.3
I
d
(mA)
V
ref
(V)
Figure 3. Device Current vs. Vref.
The gate bias method would not
normally be used unless a negative
supply voltage was readily avail-
able. For reference, this is the
method used in the characteriza-
tion test circuits shown in Figures
1 and 2 of the MGA-725M4 data
sheet.
Source Resistor Bias
The source resistor method is the
simplest way of biasing the
MGA-725M4 using a single,
positive supply voltage. This
method, shown in Figure 4, places
the RF input at DC ground and
requires both of the device
grounds to be RF bypassed.
Device current, Id, is determined
by the value of the source resis-
tance, Rbias, between either Pin 1
and Pin 3 of the MGA-725M4 and
DC ground. Pin 1 and Pin 3 are
connected internally in the RFIC.
Maximum device current (ap-
proximately 65 mA) occurs for
Rbias= 0Ω.
OUTPUT
& Vd
INPUT 24
3
1
Rbias
Figure 4. Source Resistor Bias.
A simple method recommended
for DC grounding the input
terminal is to merely add a
resistor from Pin 2 to ground, as
shown in Figure 4. The value of
the shunt R can be comparatively
high since the only voltage drop
across it is due to minute leakage
currents that in the mA range. A
value of 1kΩ would adequately DC
ground the input while loading the
RF signal by only 0.2 dB loss. A
plot of typical Id vs Rbias is shown
in Figure 5.
0
10
60
50
40
30
20
040
20 60 80 100 140120
I
d
(mA)
R
bias
(Ω)
Figure 5. Device Current vs. Rbias.
The approximate value of the
external resistor, Rbias, may also
be calculated from:
Rbias = 964 (1 –0.112 √ Id)
Id
where R
bias
is in ohms and I
d
is the
desired device current in mA. The
source resistor technique is the
preferred and most common
method of biasing the MGA-725M4.
Adaptive Biasing
For applications in which input
power levels vary over a wide
range, it may be useful to dynami-
cally adapt the bias of the
MGA-725M4 to match the signal
level. This involves sensing the
signal level at some point in the
system and automatically adjust-
ing the bias current of the ampli-
fier accordingly. The advantage of
adaptive biasing is conservation of
supply current (longer battery life)
by using only the amount of
current necessary to handle the
input signal without distortion.
Adaptive biasing of the
MGA-725M4 can be accomplished
by either analog or digital means.
For the analog control case, an
active current source (discrete
device or IC) is used in lieu of the
source bias resistor. For simple
digital control, electronic switches
15
can be used to control the value of
the source resistor in discrete
increments. Both methods of
adaptive biasing are depicted in
Figure 6.
Applying the Device Voltage
Common to all methods of
biasing, voltage Vd is applied to
the MGA-725M4 through the RF
Output connection (Pin 4). A RF
choke is used to isolate the RF
signal from the DC supply. The
bias line is capacitively bypassed
to keep RF from the DC supply
lines and prevent resonant dips or
peaks in the response of the
amplifier. Where practical, it may
be cost effective to use a length of
high impedance transmission line
(Preferably λ/4) in place of the
RFC.
When using the gate bias method,
the overall device voltage is equal
to the sum of Vref at Pin 2 and
voltage Vd at Pin 4. As an example,
to bias the device at the typical
operating voltage of 3 volts, Vd
would be set to 2.5 volts for a Vref
of -0.5 volts. Figure 7 shows a DC
schematic of a gate bias circuit.
Just as for the gate bias method,
the overall device voltage for
source resistor biasing is equal to
Vref + Vd. Since Vref is zero when
using a source resistor, Vd is the
same as the device operating
voltage, typically 3 volts. A source
resistor bias circuit is shown in
Figure 8.
RF
Output
RFC
V
d
= +2.5 V
Vref = -0.5 V
RF
Input
Figure 7. DC Schematic for Gate Bias.
RF
Output
RFC
V
d
= +2.5 V
R
bias
RF
Input
Figure 8. DC Schematic of Source Resistor
Biasing.
A DC blocking capacitor at the
output of the RFIC isolates the
supply voltage from succeeding
circuits. If the source resistor
method of biasing is used, the RF
input terminal of the MGA-725M4
is at DC ground potential and a
blocking capacitor is not required
unless the input is connected
directly to a preceding stage that
has a DC voltage present.
Biasing for Higher Linearity or
Output Power
While the MGA-725M4 is designed
primarily for use up to 50 mA in
3 volt applications, the output
power can be increased by using
higher currents and/or higher
supply voltages. If higher bias
levels are used, appropriate
caution should be observed for
both the thermal limits and the
Absolute Maximum Ratings.
As a guideline for operation at
higher bias levels, the Maximum
Operating conditions shown in the
data sheet table of Absolute
Maximum Ratings should be
followed. This set of conditions is
the maximum combination of bias
voltage, bias current, and device
temperature that is recommended
for reliable operation. Note: In
contrast to Absolute Maximum
Ratings, in which exceeding may
one parameter may result in
damage to the device, all of the
Maximum Operating conditions
may reliably be applied to the
MGA-725M4 simultaneously.
Controlling the Switch
The state of the MGA-725M4
(amplifier or bypass mode) is
controlled by the device current.
For device currents greater than
5 mA, the MGA-725M4 functions
as an amplifier. If the device
current is set to zero, the
MGA-725M4 is switched into
bypass mode in which the ampli-
fier is turned off and the signal is
routed around the amplifier with a
loss of approximately 2.5 dB.
The bypass state is normally
engaged in the presence of high
input levels to prevent distortion
of the signal that might occur in
the amplifier. In the bypass state
the input TOI is very high, typi-
cally +39 dBm at 1900 MHz.
Figure 6. Adaptive Bias Control.
Analog
Control
Output
& V
d
Output
& V
d
Input Input
V
ref
24
31
V
ref
Analog Control
(b) Digital(a) Analog
22
31
16
The simplest method of placing
the MGA-725M4 into the bypass
mode is to open-circuit the ground
terminals at Pins 1 and 3. With the
ground connection open, the
internal control circuit of the
MGA-725M4 auto-switches from
the amplifier mode into a bypass
state and the device current drops
to near zero. Nominal current in
the bypass state is 2 µA with a
maximum of 15 µA.
24
31
R
bias
Bypass Switch
Enable
Output & V
d
Input
Figure 9. MGA-725M4 Amplifier/Bypass State
Switching.
An electronic switch can be used
to control states as shown in
Figure 9. The control switch could
be implemented with either a
discrete transistor or simple IC.
The speed at which the
MGA-725M4 switches between
states is extremely fast and will
normally be limited by the time
constants of external circuit
components, such as the bias
circuit and the bypass and block-
ing capacitors.
The input and output of the
MGA-725M4 while in the bypassed
state are internally matched to
50Ω. The input return loss can be
further improved at 1900 MHz by
adding a 2.9 to 3.9 nH series
inductor added to the input. This
is the same approximate value of
inductor that is used to improve
input match when the MGA-725M4
is in the amplifier state.
Thermal Considerations
Good thermal design is always an
important consideration in the
reliable use of any device, since
the Mean Time To Failure (MTTF)
of semiconductors is inversely
proportional to the operating
temperature.
The MGA-725M4 is a compara-
tively low power dissipation
device. When biased at 3 volts and
20 mA for LNA application, the
power dissipation is 3.0 volts x
20 mA or 60 mW. The temperature
increment from the RFIC channel
to its case is then 0.060 watt x
200°C/Watt, or only 12°C. Sub-
tracting the channel to case
temperature rise from the sug-
gested maximum junction tem-
perature of 150°C, the resulting
maximum allowable case tempera-
ture is 138°C.
The worst case thermal situation
occurs when the MGA-725M4 is
operated at its Maximum Operat-
ing Conditions in an effort to
maximize output power or to
achieve minimum distortion. A
similar calculation for the
Maximum Operating bias of
4.2 volts and 60 mA yields a
maximum allowable case tempera-
ture of 100°C. This calculation
further assumes the worst case of
no RF power being extracted from
the device. When operated in a
saturated mode, both power
added efficiency and the maxi-
mum allowable case temperature
will increase.
Note “Case” temperature for
surface mount packages such as
the SOT-343 refers to the interface
between the package pins and the
mounting surface, i.e., the tem-
perature at the PCB mounting pad.
The primary heat path from the
RFIC chip to the system heat sink
is by means of conduction through
the package leads and ground vias
to the ground plane of the PCB.
PCB Layout and Grounding
When laying out a printed circuit
board for the MGA-725M4, several
points should be considered. Of
primary concern is the RF bypass-
ing of the ground terminals when
the device is biased using the
source resistor method.
Package Footprint
A suggested PCB pad print for the
miniature, Minipak 1412 package
used by the MGA-725M4 is shown
in Figure 10.
0.5
0.020
0.4
0.016
0.4
0.016
1.1
0.043
0.3
0.012
0.5
0.020
0.3
0.012
Figure 10. PCB Pad Print for Minipak 1412
Package (mm [inches]).
This pad print provides allowance
for package placement by auto-
mated assembly equipment
without adding excessive
parasitics that could impair the
high frequency performance of the
MGA-725M4. The layout is shown
with a footprint of the MGA-725M4
superimposed on the PCB pads for
reference.
RF Bypass
For layouts using the source
resistor method of biasing, both of
the ground terminals of the
MGA-725M4 must be well
by-passed to maintain device
stability.
Beginning with the package pad
print in Figure 10, a RF layout
similar to the one shown in
Figure 11 is a good starting point
for using the MGA-725M4 with
capacitor-bypassed ground
terminals. It is a best practice to
use multiple vias to minimize
overall ground path inductance.
17
Two capacitors are used at each of
the PCB pads for both Pins 1 and
3. The value of the bypass capaci-
tors is a balance between provid-
ing a small reactance for good RF
grounding, yet not being so large
that the capacitor’s parasitics
introduce undesirable resonances
or loss.
Figure 11. Layout for RF Bypass.
If the source resistor biasing
method is used, a ground pad
located near either Pin 1 or Pin 3
may be used to connect the
current-setting resistor (Rbias)
directly to DC ground. If the Rbias
resistor is not located immediately
adjacent to the MGA-725M4 (as
may be the case of dynamic
control of the device’s linearity),
then a small series resistor (e.g.
10Ω) located near the ground
terminal will help de-Q the
connection from the MGA-725M4
to an external current-setting
circuit.
PCB material
FR-4 or G-10 type dielectric
materials are typical choices for
most low cost wireless applica-
tions using single or multi-layer
printed circuit boards. The thick-
ness of single-layer boards usually
range from 0.020 to 0.031 inches.
Circuit boards should be con-
structed so that distance to ground
for RF signals are less than 0.031
inches. Using PCB layer stacks
that are greater than this are not
recommended due to excessive
inductance in the vias.
Application Example
An example evaluation PCB layout
for the MGA-725M4 is shown in
Figure 12. This evaluation circuit is
designed for operation from a
+3-volts supply and includes
provision for a 2-bit DIP switch to
set the state of the MGA-725M4. For
evaluation purposes, the 2-bit
switch is used to set the device to
either of four states: (1) bypass
mode-switch bypasses the amplifier,
(2) low noise amplifier mode–low
bias current, (3) and (4) driver
amplifier modes–high bias currents.
Figure 12. PCB Layout for Evaluation Circuit.
A complete evaluation amplifier
optimized for use at 1900 MHz is
shown with all related compo-
nents and SMA connectors in
Figure 13. A schematic diagram of
the evaluation circuit is shown in
Figure 14 with component values
in Table 1.
Table 1. Component Values for 1900 MHz
Amplifier.
R1 =5.1kΩC =100 pF
R2 =5.1kΩC0 =1000pF
R3 =10ΩC1 =100 pF
R4 =24ΩC2 =47 pF
L1 =3.9 nH C3 =30 pF
RFC =22 nH C4 =22 pF
SW1, SW2 DIP switch C5 =22 pF
SC Short C6 =30 pF
The on-board resistors R3 and R4
form the equivalent source bias
resistor Rbias as indicated in the
schematic diagram in Figure 14. In
this example, resistor values of
R3 = 10Ω and R4 =24Ω were
chosen to set the nominal device
current for the four states: (1)
bypass mode, 0 mA, (2) LNA
mode, 20 mA, (3) driver, 35 mA,
and (4) driver, 40 mA.
C
C0
C
C2
C6
C5
L1C1
R1
R2 C0
SW
R3
C4
C3
RFC
SC
C
C0
VdVin
Vcon
IN
CSP
Out
AGILENT
MGA-71,72
9/00
Figure 13. Complete Amplifier with Component Reference Designators.
18
Figure 14. Schematic Diagram of 1900 MHz Evaluation Amplifier.
RF
Output
CC0
C2
C
RFC
Vd
Rbias
C3
C1 L1
R1
C4
C5
C
C0 SW2
SW1
R2
C6
R3
R4
RF
Input
C0
Vcon
Other currents can be set by
positioning the DIP switch to the
bypass state and adding an
external bias resistor to Vcon.
Unless an external resistor is used
to set the current, the Vcon termi-
nal is left open. DC blocking
capacitors are provided for the
both the input and output.
The 2-pin, 0.100" centerline single
row headers attached to the Vd
and Vcon connections on the PCB
provide a convenient means of
making connections to the board
using either a mating connector or
clip leads.
A Note on Performance
Actual performance of the
MGA-725M4 as measured in an
evaluation circuit may not exactly
match the datasheet specifica-
tions. The circuit board material,
passive components, RF bypasses
and connectors all introduce
losses and parasitics that degrade
device performance.
For the evaluation circuit above,
fabricated on 0.031-inch thick
GETEK G200D (er=4.2) dielectric
material, circuit losses of about
0.3 dB would be expected at both
the input and output sides of the
RFIC at 1900 MHz. Measured
noise figure (3 volts, 20 mA bias)
would then be approximately
1.8 dB and gain 13.8 dB.
Hints and Troubleshooting
Preventing Oscillation
Stability of the MGA-725M4 is
dependent on having very good RF
grounding. Inadequate device
grounding or poor PCB layout
techniques could cause the device
to be potentially unstable.
Even though a design may be
unconditionally stable (K>1 and
B1>0) over its full frequency
range, other possibilities exist that
may cause an amplifier circuit to
oscillate. One condition to check
for is feedback in the bias circuit.
It is important to capacitively
bypass the connections to active
bias circuits to ensure stable
operation. In multistage circuits,
feedback through bias lines can
also lead to oscillation.
Components of insufficient quality
for the frequency range of the
amplifier can sometimes lead to
instability. Also, component values
that are chosen to be much higher
in value than is appropriate for the
application can present a problem.
In both of these cases, the compo-
nents may have reactive parasitics
that make their impedances very
different than expected. Chip
capacitors may have excessive
inductance or chip inductors can
exhibit resonances at unexpected
frequencies.
A Note on Supply Line Bypassing
Multiple bypass capacitors are
normally used throughout the
power distribution within a
wireless system. Consideration
should be given to potential
resonances formed by the combi-
nation of these capacitors and the
inductance of the DC distribution
lines. The addition of a small value
resistor in the bias supply line
between bypass capacitors will
often de-Q the bias circuit and
eliminate resonance effects.
Statistical Parameters
Several categories of parameters
appear within the electrical
specification portion of the
MGA-725M4 data sheet. Param-
eters may be described with
values that are either “minimum or
maximum”, “typical” or “standard
deviation”.
The values for parameters are
based on comprehensive product
characterization data, in which
automated measurements are
made on a statistically significant
number of parts taken from
nonconsecutive process lots of
19
semiconductor wafers. The data
derived from product character-
ization tends to be normally
distributed, e.g., fits the standard
bell curve.
Parameters considered to be the
most important to system perfor-
mance are bounded by minimum
or maximum values. For the
MGA-725M4, these parameters
are: Vc test, NFtest, Ga test, IIP3test,
and ILtest. Each of the guaranteed
parameters is 100% tested as part
of normal manufacturing and test
process.
Values for most of the parameters
in the table of Electrical Specifica-
tions that are described by typical
data are mathematical mean (µ), of
the normal distribution taken from
the characterization data. For
parameters where measurements
of mathematical averaging may not
be practical, such as S-parameters
or Noise Parameters and the
performance curve, the data
represents a nominal part taken
from the center of the character-
ization distribution. Typical values
are intended to be used as a basis
for electrical design.
To assist designers in optimizing
not only the immediate amplifier
circuit using the MGA-725M4, but
to also evaluate and optimize
trade-offs that affect a complete
wireless system, the standard
deviation (σ) is provided for many
of the Electrical Specification
parameters (at 25°C). The stan-
dard deviation is a measure of
variability about the mean. It will
be recalled that a normal distribu-
tion is completely described by
the mean and standard deviation.
Standard statistics tables or
calculations provide the probabil-
ity of a parameter falling between
any two values, usually symmetri-
cally located about the mean.
Referring to Figure 15 for ex-
ample, the probability of a param-
eter being between ±1σ is 68.3%;
between ±2σ is 95.4%; and
between ±3σ is 99.7%.
68%
95%
99%
Parameter Value
Mean (µ)
(typical)
-3σ-2σ-1σ+1σ+2σ+3σ
Figure 15. Normal Distribution Curve.
Phase Reference Planes
The positions of the reference
planes used to specify S-param-
eters and Noise Parameters for the
MGA-725M4 are shown in Fig-
ure 16. As seen in the illustration,
the reference planes are located at
centre of package solder pads.
S and Noise Parameter data was
taken with the package mounted
to 50 ohm lines on 10 mil alumina
substrates, and the ground pads
were connected directly to the
substrate ground plane through a
solid metal rib. Designers should
include the parasitics of the
grounding system used in their
application.
Bottom View
Reference
Planes
Figure 16. Phase Reference Planes.
SMT Assembly
The package can be soldered
using either lead-bearing or lead-
free alloys. Reliable assembly of
surface mount components is a
complex process that involves
many material, process, and
equipment factors, including:
method of heating (e.g. IR or
vapor phase reflow, wave solder-
ing, etc) circuit board material,
conductor thickness and pattern,
type of solder alloy, and the
thermal conductivity and thermal
mass of components. Components
with a low mass, such as the
Minipak 1412 package, will reach
solder reflow temperatures faster
than those with a greater mass.
The MGA-725M4 has been quali-
fied to the time-temperature
profile shown in Figure 17. This
profile is representative of an IR
reflow type of surface mount
assembly process. After ramping
up from room temperature, the
circuit board with components
attached to it (held in place with
solder paste) passes through one
or more preheat zones. The
preheat zones increase the
temperature of the board and
components to prevent thermal
shock and begin evaporating
solvents from the solder paste.
The reflow zone briefly elevates
the temperature sufficiently to
produce a reflow of the solder.
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
of board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
reflow zone (Tmax) should not
exceed 235°C.
These parameters are typical for a
surface mount assembly process
for the MGA-725M4. As a general
guideline, the circuit board and
components should only be
exposed to the minimum tempera-
tures and times necessary to
achieve a uniform reflow of
solder.
Electrostatic Sensitivity
RFIC are electrostatic discharge
(ESD) sensitive devices. Although
the MGA-725M4 is robust in
design, permanent damage may
occur to these devices if they are
subjected to high-energy electro-
static discharges. Electrostatic
charges as high as several thou-
sand volts (which readily accumu-
Figure 17. Surface Mount Assembly Profile.
TIME (seconds)
T
MAX
TEMPERATURE (°C)
0
0
50
100
150
200
250
60
Preheat
Zone Cool Down
Zone
Reflow
Zone
120 180 240 300
late on the human body and on
test equipment) can discharge
without detection and may result
in failure or degradation in
performance and reliability.
Electronic devices may be sub-
jected to ESD damage in any of
the following areas :
•Storage & handling
•Inspection
•Assembly & testing
•In-circuit use
The MGA-725M4 is an ESD Class 1
device. Therefore, proper ESD
precautions are recommended
when handling, inspection, testing,
assembling, and using these
devices to avoid damage.
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5988-1547EN
October 1, 2001
5988-4278EN
Any user-accessible points in
wireless equipment (e.g. antenna
or battery terminals) provide an
opportunity for ESD damage.
For circuit applications is which
the MGA-725M4 is used as an
input or output stage with close
coupling to an external antenna,
the RFIC should be protected
from high voltage spikes due to
human contact with the antenna.
A best practice, illustrated in
Figure 18, is to place a shunt
inductor (RFC) at the antenna
connection to protect the receiver
and transmitter circuits. It is often
advantageous to integrate the RFC
into a diplexer or T/R switch
control circuitry.
Figure 18. In-circuit ESD Protection.
