LESHAN RADIO COMPANY, LTD. Darlington Transistors PNP Silicon MMBTA63LT1 MMBTA64LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CES -30 Vdc Collector-Base Voltage V CBO -30 Vdc Emitter-Base Voltage V -10 Vdc -500 mAdc Collector Current -- Continuous EBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RJA PD 1.8 556 300 mW/C C/W mW RJA TJ , Tstg 2.4 417 -55 to +150 mW/C C/W C DEVICE MARKING MMBTA63LT1 = 2U MMBTA64LT1 = 2V ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO -30 -- Vdc I CBO -- -100 nAdc I EBO -- -100 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -100 Adc, ) Collector Cutoff Current ( V CB = -30Vdc) Emitter Cutoff Current ( V EB = -10Vdc ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M30-1/3 LESHAN RADIO COMPANY, LTD. MMBTA63LT1 MMBTA64LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 5,000 10,000 10,000 20,000 -- -- -- -- VCE(sat) -- -1.5 Vdc V BE(on) -- -2.0 Vdc ON CHARACTERISTICS DC Current Gain(3) (I C = -10 mAdc, V CE = -5.0 Vdc) (I C = -10 mAdc, V CE = -5.0 Vdc) (I C = -100mAdc, V CE = -5.0Vdc) (I C = -100mAdc, V CE = -5.0Vdc) Collector-Emitter Saturation Voltage (I C = -100 mAdc, I B = -0.1 mAdc) Base-Emitter On Voltage (I C = -100mAdc, V CE = -5.0Vdc) hFE MMBTA63 MMBTA64 MMBTA63 MMBTA64 -- SMALL-SIGNAL CHARACTERISTICS Current - Gain-Bandwidth Product(4) (V CE = -5.0 Vdc, I C = -10mAdc, f = 100 MHz) fT 125 -- MHz 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. M30-2/3 LESHAN RADIO COMPANY, LTD. h FE , DC CURRENT GAIN (X1.0 K) MMBTA63LT1 MMBTA64LT1 200 T A = 125C 100 70 50 -10 V 25C 30 V CE = -2.0 V 20 -5.0 V 10 7.0 5.0 -55C 3.0 2.0 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 I C , COLLECTOR CURRENT (mA) -2.0 T A = 25C V BE(sat) @ I C /I B = 100 -1.2 V BE(on) @ V CE = -5.0 V -0.8 V CE(sat) @ I C /I B = 1000 I C /I B = 100 -0.4 -0 -0.3-0.5 -1.0 -2.0-3.0 -5.0 -10 -20-30 -50 -100 -200-300 -2.0 T A = 25C -1.8 -1.6 I C = -10 mA -50 mA -100 mA -175 mA -300 mA -1.4 -1.2 -1.0 -0.8 -0.6 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50-100 -300 -500 -1k -2k I C , COLLECTOR CURRENT (mA) I B , BASE CURRENT (mA) Figure 2. "On" Voltage Figure 3. Collector Saturation Region |h FE |, HIGH FREQUENCY CURRENT GAIN V, VOLTAGE (VOLTS) -1.6 V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -5k -10k 10 V CE = -5.0 V 4.0 3.0 f = 100 MHz T A = 25C 2.0 1.0 0.4 0.2 0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1k I C , COLLECTOR CURRENT (mA) Figure 4. High Frequency Current Gain M30-3/3