LESHAN RADIO COMPANY, LTD.
M30–1/3
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CES –30 Vdc
Collector–Base V oltage V CBO –30 Vdc
Emitter–Base V oltage V EBO –10 Vdc
Collector Current — Continuous I C–500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBTA63LT1 = 2U MMBTA64LT1 = 2V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CEO –30 — Vdc
(I C = –100 µAdc, )
Collector Cutoff Current I CBO — –100 nAdc
( V CB = –30Vdc)
Emitter Cutoff Current I EBO — –100 nAdc
( V EB = –10Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3
MMBTA63LT1
MMBTA64LT1
2
EMITTER
3
COLLECTOR
1
BASE
Darlington Transistors
PNP Silicon
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
LESHAN RADIO COMPANY, LTD.
M30–2/3
MMBTA63LT1 MMBTA64LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS
DC Current Gain(3) hFE ––
(I C = –10 mAdc, V CE = –5.0 Vdc) MMBTA63 5,000 —
(I C = –10 mAdc, V CE = –5.0 Vdc) MMBTA64 10,000 —
(I C = –100mAdc, V CE = –5.0Vdc) MMBTA63 10,000 —
(I C = –100mAdc, V CE = –5.0Vdc) MMBTA64 20,000 —
Collector–Emitter Saturation V oltage VCE(sat) –– –1.5 Vdc
(I C = –100 mAdc, I B = –0.1 mAdc)
Base–Emitter On Voltage V BE(on) — –2.0 Vdc
(I C = –100mAdc, V CE = –5.0Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4) fT125 — MHz
(V CE = –5.0 Vdc, I C = –10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
LESHAN RADIO COMPANY, LTD.
M30–3/3
MMBTA63LT1 MMBTA64LT1
T
A
= 125°C
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
I C , COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I C , COLLECTOR CURRENT (mA)
Figure 4. High Frequency Current Gain
h FE , DC CURRENT GAIN (X1.0 K)
V, VOLTAGE (VOLTS)
V CE , COLLECTOR– EMITTER VOLTAGE
(VOLTS)
|h FE |, HIGH FREQUENCY CURRENT GAIN
25°C
–55°C
V
CE
= –2.0 V
–5.0 V
–10 V
T
A
= 25°C
V
BE(on)
@ V
CE
= –5.0 V
V
CE(sat)
@ I
C
/I
B
= 1000 I
C
/I
B
= 100
T
A
= 25°C
I
C
= –10 mA –50 mA –100 mA –175 mA –300 mA
V
CE
= –5.0 V
f = 100 MHz
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 100
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300
–2.0
–1.6
–1.2
–0.8
–0.4
–0
–0.3–0.5 –1.0 –2.0–3.0 –5.0 –10 –20–30 –50 –100 –200–300
–2.0
–1.8
–1.6
–1.4
–1.2
–1.0
–0.8
–0.6
–0.1 –0.2 –0.5–1.0 –2.0 –5.0 –10 –20 –50–100–300 –500 –1k –2k –5k –10k
10
4.0
3.0
2.0
1.0
0.4
0.2
0.1–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1k
