HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs December 2001 Features Packages JEDEC TO-220AB * Logic Level Gate Drive EMITTER COLLECTOR GATE * Internal Voltage Clamp * ESD Gate Protection COLLECTOR (FLANGE) o * TJ = 175 C * Ignition Energy Capable JEDEC TO-262AA Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. EMITTER COLLECTOR JEDEC TO-263AB COLLECTOR (FLANGE) PACKAGING AVAILABILITY PART NUMBER PACKAGE GATE COLLECTOR (FLANGE) GATE BRAND HGTP14N36G3VL TO-220AB 14N36GVL HGT1S14N36G3VL TO-262AA 14N36GVL HGT1S14N36G3VLS TO-263AB 14N36GVL EMITTER Terminal Diagram NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S14N36G3VLS9A. N-CHANNEL ENHANCEMENT MODE COLLECTOR The development type number for this device is TA49021. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 5V, TC = +100oC . . . . . . . . . . . . . . . . . . . . . . IC100 Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . ISCIS at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L = 2.3mH, T C = +25oC. . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 390 24 18 14 10 17 12 332 100 0.67 -40 to +175 260 6 UNITS V V A A V A A mJ W W/oC o C o C KV NOTE: May be exceeded if IGEM is limited to 10mA. (c)2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Gate-Emitter Plateau Voltage Gate Charge SYMBOL BVCER MAX UNITS TC = +175oC 320 355 400 V TC = +25oC 330 360 390 V TC = -40oC 320 350 385 V TC = +25oC - 2.7 - V QG(ON) IC = 7A, VCE = 12V TC = +25oC - 24 - nC IC = 7A RG = 1000 TC = +175oC 350 380 410 V IC = 10mA TC = +25oC 24 28 - V VCE = 250V RGE = 1k TC = +25oC - - 25 A TC = +175oC - - 250 A TC = +25oC - 1.25 1.45 V TC = +175oC - 1.15 1.6 V TC = +25oC - 1.6 2.2 V TC = +175oC - 1.7 2.9 V TC = +25oC 1.3 1.8 2.2 V Emitter-Collector Breakdown Voltage BVECS ICER VCE(SAT) IC = 7A VGE = 4.5V IC = 14A VGE = 5V Gate-Emitter Threshold Voltage TYP IC = 7A, VCE = 12V BVCE(CL) Collector-Emitter Saturation Voltage IC = 10mA, VGE = 0V RGE = 1k MIN VGEP Collector-Emitter Clamp Breakdown Voltage Collector-Emitter Leakage Current TEST CONDITIONS VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance R1 TC = +25oC - 75 - Gate-Emitter Resistance R2 TC = +25oC 10 20 30 k Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load Inductive Use Test Thermal Resistance (c)2001 Fairchild Semiconductor Corporation IGES VGE = 10V 330 500 1000 A BVGES IGES = 2mA 12 14 - V - 7 - s TC = +175oC 12 - - A TC = +25oC 17 - - A - - 1.5 tD(OFF)I + tF(OFF)I ISCIS RJC IC = 7A, RL = 28 RG = 25, L = 550H, VCL = 300V, VGE = 5V, TC = +175oC L = 2.3mH, VG = 5V, o C/W HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Typical Performance Curves PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = +25oC PULSE DURATION = 250s, DUTY CYCLE <0.5%, VCE = 10V 40 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 25 20 15 10 +25oC +175oC 5 -40oC 10V 30 4.5V 20 4.0V 3.5V 10 3.0V 2.5V 0 0 1 2 3 4 0 5 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) 35 VGE = 5.0V TC = +175oC 30 25 10 FIGURE 2. SATURATION CHARACTERISTICS VGE = 4.5V 20 VGE = 4.0V 15 10 5 ICE , COLLECTOR EMITTER CURRENT (A) FIGURE 1. TRANSFER CHARACTERISTICS ICE , COLLECTOR EMITTER CURRENT (A) 5.0V 35 -40oC VGE = 4.5V 30 +25oC 25 +175oC 20 15 10 5 0 0 4 1 2 3 VCE(SAT) , SATURATION VOLTAGE (V) 0 5 0 1 2 3 4 5 VCE(SAT) , SATURATION VOLTAGE (V) FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE 2.25 1.35 VGE = 4.0V 1.25 VGE = 4.5V 1.15 VGE = 5.0V 1.05 -25 +25 +75 +125 TJ , JUNCTION TEMPERATURE (oC) FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE (c)2001 Fairchild Semiconductor Corporation ICE = 14A VCE(SAT) , SATURATION VOLTAGE (V) VCE(SAT) , SATURATION VOLTAGE (V) ICE = 7A VGE = 4.0V 2.00 1.75 VGE = 4.5V VGE = 5.0V 1.50 +175 -25 +25 +75 +125 +175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS ICE, COLLECTOR-EMITTER CURRENT (A) 20 VGE = 5V 18 16 14 12 10 8 6 4 2 0 +25 +50 +75 +125 +100 TC, CASE TEMPERATURE (oC) +150 +175 FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF CASE TEMPERATURE VGE(TH), NORMALIZED THRESHOLD VOLTAGE Typical Performance Curves (Continued) 1.2 ICE = 1ma 1.1 1.0 0.9 0.8 0.7 0.6 +25 +75 +125 TJ , JUNCTION TEMPERATURE (oC) -25 +175 FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE 7.0 VCE = 300V, VGE = 5V VECS = 20V 6.5 t(OFF)I, TURN OFF TIME (s) LEAKAGE CURRENT (A) 1E4 1E3 1E2 1E1 VCES = 250V RGE = 25, L = 550H RL = 37, ICE = 7A 6.0 5.5 5.0 4.5 4.0 1E0 3.5 3.0 1E-1 +20 +60 +100 +140 o TJ , JUNCTION TEMPERATURE ( C) FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE (c)2001 Fairchild Semiconductor Corporation +180 +25 +50 + 75 +100 +125 +150 +175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. TURN-OFF TIME AS A FUNCTION OF JUNCTION TEMPERATURE HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Typical Performance Curves (Continued) 650 VGE = 5V +25oC VGE = 5V 600 550 20 EAS , ENERGY (mJ) o +175 C 15 +25oC 500 450 400 350 300 10 +175oC 250 200 5 0 2 6 4 8 10 150 2 0 L, INDUCTANCE (mH) FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT AS A FUNCTION OF INDUCTANCE 10 8 FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY AS A FUNCTION OF INDUCTANCE REF IG = 1mA, RL = 1.7, TC = +25oC FREQUENCY = 1MHz 1800 1600 CIES 1400 1200 1000 800 600 400 COES 200 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE (c)2001 Fairchild Semiconductor Corporation VCE, COLLECTOR-EMITTER VOLTAGE (V) 2000 C, CAPACITANCE (pF) 4 6 L , INDUCTANCE (mH) 12 6 10 5 8 4 VCE = 12V 3 6 VCE = 4V 4 2 VCE = 8V 2 1 0 VGE, GATE-EMITTER VOLTAGE (V) IC , INDUCTIVE SWITCHING CURRENT (A) 25 0 0 5 10 15 20 25 30 QG, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B 355 100 BVCER, COLLECTOR-EMITTER BKDN VOLTAGE (V) ZJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves (Continued) 0.5 0.2 t1 10-1 0.1 PD 0.05 t2 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC ) + TC 0.01 10-2 10-5 350 345 340 25oC 335 175oC 330 SINGLE PULSE 325 10-4 10-3 10-2 10-1 101 100 2000 0 t1 , RECTANGULAR PULSE DURATION (s) 4000 6000 8000 10000 RGE, GATE-TO- EMITTER RESISTANCE () FIGURE 15. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF GATE-EMITTER RESISTANCE Test Circuits RL 2.3mH VDD L = 550H C RGEN = 25 RG DUT 5V C 1/RG = 1/RGEN + 1/RGE RGEN = 50 G E G DUT + - 10V VCC 300V RGE = 50 E FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING CURRENT TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME TEST CIRCUIT HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Handling Precautions for IGBT's Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT's are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating -The gate-voltage rating of VGEM may be exceeded if IGEM is limited to 10mA. Trademark Emerson and Cumming, Inc . FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4