FEATURES
DTrenchFETr Power MOSFET
DESD Protected: 2000 V
APPLICATIONS
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
DPower Supply, Converter Circuits
DMotor Control
TP0610KL/BS250KL
Vishay Siliconix
New Product
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V) rDS(on) ()VGS(th) (V) ID (A)
60
6 @ VGS = −10 V
1 to 30
−0.27
−60 10 @ VGS = −4.5 V
−1 to −3.0
−0.21
Ordering Information: TP0610KL-TR1
1
TO-226AA
(TO-92)
Top View
S
D
G2
3
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
“S” TP
0610KL
xxyy
Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
“S” BS
250KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
D
S
G
100
Ordering Information: BS250KL-TR1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS −60
V
Gate-Source Voltage VGS "20 V
Continuous Drain Current
TA = 25_C
ID
−0.27
Continuous Drain Current TA = 70_CID−0.22 A
Pulse Drain CurrentaIDM −1.0
Power Dissipation
TA = 25_C
PD
0.8
W
Power Dissipation TA = 70_C
P
D0.51 W
Maximum Junction-to-Ambient RthJA 156 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
TP0610KL/BS250KL
Vishay Siliconix New Product
www.vishay.com
2
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −10 µA−60
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA−1−2.1 −3.0 V
VDS = 0 V, VGS = "20 V "10 A
Gate Body Leakage
IGSS
VDS = 0 V, VGS = "10 V "200
Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V, TJ = 85_C"500 nA
VDS = 0 V, VGS = "5 V "100
Zero Gate Voltage Drain Current
IDSS
VDS = −60 V, VGS = 0 V −1
A
Zero Gate Voltage Drain Current IDSS VDS = −60 V, VGS = 0 V, TJ = 55_C−10 A
On State Drain Currenta
ID( )
VDS = −10 V, VGS = −4.5 V −50
mA
On-State Drain CurrentaID(on) VDS = −10 V, VGS = −10 V −600 mA
VGS = −4.5 V, ID = −25 mA 5.5 10
Drain-Source On-ResistancearDS(on) VGS = −10 V, ID = −500 mA 3.1 6
DS(on)
VGS = −10 V, ID = −500 mA, TJ = 125_C4.7 9
Forward Transconductanceagfs VDS = −10 V, ID = −100 mA 180 mS
Diode Forward VoltageaVSD IS = −200 mA, VGS = 0 V −0.9 −1.4 V
Dynamicb
Total Gate Charge Qg1.7 3
Gate-Source Charge Qgs VDS = −30 V, VGS = −15 V, ID ^ −500 mA 0.26 nC
Gate-Drain Charge Qgd
0.46
Gate Resistance Rg285
Turn On Time
td(on) 2.4 5
Turn-On Time trVDD = −25 V, RL = 150
15.5 25
ns
Turn Off Time
td(off)
ID ^ −150 mA, VGEN = −10 V
Rg = 10 21 35 ns
Turn-Off Time tf
12.5 20
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
300
600
900
1200
0246810
0.0
0.2
0.4
0.6
0.8
1.0
012345
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS = 10 V
5 V
4 V
VGS − Gate-to-Source Voltage (V)
− Drain Current (mA)ID
TJ = −55_C
125_C
25_C
6 V
7 V
8 V
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
TP0610KL/BS250KL
Vishay Siliconix
New Product
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.3
0.6
0.9
1.2
1.5
1.8
−50 −25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
VGS = 10 V @ 500 mA
VGS = 4.5 V @ 25 mA
0
3
6
9
12
15
0.0 0.3 0.6 0.9 1.2 1.5 1.8
ID = 500 mA
Gate Charge
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
VGS
0
4
8
12
16
20
0 200 400 600 800 1000
On-Resistance vs. Drain Current
ID − Drain Current (mA)
VGS = 4.5 V
VGS = 10 V
− On-Resistance (rDS(on) )
0
8
16
24
32
40
0 5 10 15 20 25
Capacitance
VDS − Drain-to-Source Voltage (V)
C − Capacitance (pF)
Crss
Coss
Ciss
VGS = 0 V
VGS = 5 V
VDS = 30 V
VDS = 48 V
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
0
2
4
6
8
10
0246810
On-Resistance vs. Gate-Source Voltage
V
GS
− Gate-to-Source Volta
g
e
(
V
)
ID = 500 mA
ID = 200 mA
− On-Resistance (rDS(on) )
1.2 1.5
1
100
1000
0.00 0.3 0.6 0.9
TJ = 25_C
TJ = 125_C
Source-Drain Diode Forward Voltage
V
SD
− Source-to-Drain Volta
g
e
(
V
)
− Source Current (A)IS
10
TJ = −55_C
VGS = 0 V
rDS(on) − On-Resiistance
(Normalized)
TP0610KL/BS250KL
Vishay Siliconix New Product
www.vishay.com
4
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Variance Over Temperature
Variance (V)VGS(th)
−0.3
−0.2
−0.1
−0.0
0.1
0.2
0.3
0.4
0.5
−50 −25 0 25 50 75 100 125 150
ID = 250 A
TJ − Junction Temperature (_C)
10−310−21 10 60010−1
10−4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 156_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
0.01
0
1
16
20
100 6000.1
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
12
4
8
10
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Safe Operating Area
VDS − Drain-to-Source Voltage (V)
10
0.1
0.1 1 10 100
0.001
1
TA = 25_C
Single Pulse
− Drain Current (A)ID
0.01
IDM
Limited
ID(on)
Limited
rDS(on) Limited
BVDSS Limited
1 ms
10 ms
100 ms
dc
10 s
1 s