lagnatec BS5750 Stockist Level A Qualification Pe nding Slo| -bb53 2N6107/09/11 2N6288/90/92 GENERAL PURPOSE COMPLEMENTARY PAIRS DESCRIPT The 2N6107, 2N6109, 2N61 11, 2N6288, 2N6290 and 2N6292 are epitaxial-base silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and li- ION near applications. The PNP types are the 2NG107, 2N6109, 2N6111 and their complementary NPN types are the 2N6292, 2N6290 and 2N6288 respectively. TO-220 INTERNAL SCHEMATIC DIAGRAMS c Cc a @ NPN c PNP E ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP | 2N6107 | 2N6109 | 2N6111 Unit NPN | 2N6292 | 2N6290 | 2N6298 Veso Callector-base Voltage (le = 0) 80 60 40 Vv Veex Collector-emitter Voltage (Ree = 100 9) go 60 40 Vv Veeo Collector-emitter Voltage (Ig = 0) 70 50 30 v Veso Emitter-base Voltage (Ic = 0) Vv lc Collector Current A lg Base Current A Prot Total Pawer Dissipation at Tease $ 25 C 40 Ww Ts Storage Temperature ~ 65 to 150 C T; Junction Temperature 150 c For PNP davicas valtaga and current values are negative. Magnatec !s a division of Semeiab pic. Registered in England number 1033308 Reqistered Office: Coventry Road, Lutterworth, Leicestershire, LE17 4JB, England .2N6107/09/11-2N6288/90/92 THERMAL DATA Rinj-ease | Thermal Aesistance Junction-case Max 3.12 C Rinjamo | Thermal Resistance Junction-ambient Max 70 CiW ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. | Typ. Max. Unit lcex Collector Cutott Vce= 40V for 2N6111/2N6288 0.1 mA Current Voce = 60V for 2N6109/2N6290 0.1 mA (Vag =-1.5V) | Voges 80V for 2N6107/2N6292 0.1 mA Te= 150C Vee = 30V for 2N6111/2N6288 2 mA Vee = SOV for 2N6109/2N6290 2 mA Voce = 7OV tar 2N6107/2N6292 2 mA lezo Collector Cutolf Vee = 20V for 2N6111/2N6238 1 mA Current (fg =0) | Vee 40V for 2N6109/2N5290 1 mA Voce = 60V tor 2N6107/2N6292 i mA lezo Emitter Cutoff Veg =5 V 1 mA Current (Ie = 0) Veeoisuss | Collector Emitter | Ic = Q.1A for 2N6111/2N6298 390 Vv Sustaining Valtage for 2N6109/2N6290 50 V for 2N6107/2N5292 70 Vv Veerisusr | Collector Emitter | tc aQ.1A Age = 100 chm Sustaining Valtage for 2N6111/2N6283 <0 Vv for 2N6109/2N6290 60 Vv far 2N&107/2N6292 80 Vv Vegisan | Collector-emiter | te 22 A Ig 20.2 A for 2N6111/2N6288 ' Vv Saturation Vokage} Ie = 2.5 Alg 20.25 Afar 2N6109/2N6290 1 v lo =3A |g 30.3 A for 2N6107/2N6292 1 Vv le=7A Ig adA 2.5 v Vaeian) | Base-emitter lc =2A Vee 24 A tor 2N6111/2N6288 1.5 Vv Voltage I #@2.5 AVee 24 A for 2N6109/2N6290 1.5 Vv lo =3A Vez =4A for 2N6107/2N6292 15 v le a=7A Vee =4A 3 Vv Nee OC Current Gain | !e 22 A Voce =4A tor 2N6111/2N6288 30 150 le #@2.5 AVce = 4A for 2N6109/2N6290 30 150 le s=3A Vee a4A for 2N6107/2N6292 30 150 le =7A Vee ad A 2.3 Ate Small Signal le s=O.5A Vee =4V [=50 KHz 20 Current Gain fr Transition le =O0.5A Vee =4V for NPN Types 10 MHz Frequency lo =0.5A Vee =4V_ for PNP Types 4 MHz Cera Collector-base Vea =10Vi=1 MHz 250 pF Capacitance * Pulsed : pulse duration = 300s, duty cycte = 1.5 %. For PNP types valtage and current values are negative. For characteristic curves see the 80533 (NPN) and 80534 (PNP) series.