ON Semiconductor MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high-voltage general purpose applications. * Suitable for Transformerless, Line-Operated Equipment * Thermopad Construction Provides High Power Dissipation Rating for High Reliability IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIII MAXIMUM RATINGS Rating Symbol Value Unit VCEO 300 Vdc VEB 3.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.16 Watts W/C TJ, Tstg -65 to +150 C Symbol Max Unit JC 6.25 C/W Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Range STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 CASE 77-09 TO-225AA TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 300 -- Vdc Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO -- 100 Adc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 100 Adc hFE 30 240 -- OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 10 1 Publication Order Number: MJE340/D MJE340 1.0 28 0.8 24 V, VOLTAGE (VOLTS) PD, POWER DISSIPATION (WATTS) 32 20 16 12 MJE340 8.0 TJ = 25C VBE @ VCE = 10 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 4.0 0 VBE(sat) @ IC/IB = 10 IC/IB = 5.0 0 20 40 60 100 80 120 140 0 10 160 20 TC, CASE TEMPERATURE (C) 30 50 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 2. "On" Voltages Figure 1. Power Temperature Derating ACTIVE-REGION SAFE OPERATING AREA IC, COLLECTOR CURRENT (AMP) 1.0 10 s 0.5 0.3 TJ = 150C 0.2 dc 1.0ms 500 s 0.1 0.05 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25C SINGLE PULSE 0.03 0.02 0.01 10 50 70 100 200 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 Figure 3. MJE340 The data of Figure 3 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. http://onsemi.com 2 MJE340 300 VCE = 10 V VCE = 2.0 V hFE , DC CURRENT GAIN 200 TJ = 150C 100 70 +100C 50 +25C 30 20 10 -55C 1.0 2.0 3.0 5.0 7.0 10 50 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 4. DC Current Gain http://onsemi.com 3 70 100 200 300 500 MJE340 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE W -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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