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Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics
Similar Optocouplers
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4N29, 4N30, 4N31, 4N32, 4N33
Optically Coupled Isolators
Circuit
Features
Very High Current Transfer Ratio (500% Min.)
High Isolation Resistance
Low Coupling Capacitance
Standard Plastic Dip Package
Description
The 4N29, 4N30, 4N31, 4N32, 4N33 are optically coupled isolators consisting of a Gallium Arsenide
infrared emitter and a silicon photo darlington sensor. Switching can be accomplished while maintaining a
high degree or isolation between driving and load circuits. They can be used to replace reed and mercury
relays with advantages of long life, high speed switching and elimination of magnetic fields. Surface Mount
Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative
0.65% AQL
Absolute Maximum Ratings: (Ta=25°C)
Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:
-55°C to +150°C
-55°C to +100°C
260°C for 10s, 1.6mm from case
±2500 Vdc (4N29, 4N32)
±1500 Vdc (4N30, 4N31, 4N33)
Input Diode
Forward DC Current:
Reverse DC Voltage:
Peak Forward Current:
Power Dissipation:
Derate Linearly:
60mA
3V
3A (t p=10µs)
100mW
1.33mW/°C above 25°C
Output Transistor
Collector-Emitter Voltage:
Emitter-Collector Voltage:
Power Dissipation:
Derate Linearly:
30V
7V
150mW
2.00mW/°C above 25°C
Package
Total Power Dissipation:
Derate Linearly:
250mW
3.3mW/°C above 25°C
Electro-optical Characteristics (Ta=25°C)
INPUT
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VF
Forward Voltage
IF=10mA
1.5
V
IR
Reverse Current
VR=3.0V
100
µA
VR
Reverse Breakdown Voltage
IR=100µA
3
V
OUTPUT
PARAMETER
CONDITIONS
MIN
MAX
UNIT
BVCEO
Collector-Emitter Voltage
IC=1mA
30
V
BVECO
Emitter-Collector Voltage
IE=100µA
5
V
ICEO
Collector-Emitter Dark Current
VCE=10V, IB=0
100
nA
CCE
Collector-Emitter Capacitance
VCE=0
pf
COUPLED
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IC/IF
DC Current Transfer Ratio 4N31
IF=10mA, VCE=10V
50
mA
4N29, 4N30
IB=0
100
mA
4N32, 4N33
500
mA
RIO
Input-to-Output Isolation
Resistance
VIO=500V, (Note 1)
1E11
ohm
VCE(Sat)
Collector-Emitter Saturation
Voltage
IF=8mA, IC=2mA, IB=0
4N29, 4N30, 4N32, 4N33
VCC=10V, IC=2mA
V
4N31
V
SWITCHING
SPEED
PARAMETER
CONDITIONS
MIN
MAX
UNIT
T on
Turn-On Time
IC=50mA V,CC=10V
5
µs
T off
Turn-Off Time
4N29, 4N30, 4N31
IF=200mA,
P.W.=1.0m.s.
40
µs
4N32, 4N33
100
µs
Input-to-Output Isolation Voltage
4N29, 4N32
Note 1
2500
VDC
4N30, 4N31, 4N33
1500
VDC
Notes
Note 1. Measured with input leads shorted together and output leads shorted together.
Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its
website. Visit File Lists to confirm old printouts are up-to-date.
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