TS13003HV
High Voltage NPN Transistor
1/6
Version: E13
TO
-
92
PRODUCT SUMMARY
BV
CEO
530V
BV
CBO
900V
I
C
1.5A
V
CE(SAT)
0.5V @ I
C
=0.5A, I
B
=0.1A
Features
High Voltage
High Speed Switching
Block Diagram
Structure
Silicon Triple Diffused Type
NPN Silicon Transistor
Ordering Information
Part No. Package
Packing
TS13003HVCT B0 TO-92 1Kpcs / Bulk
TS13003HVCT B0G
TO-92 1Kpcs / Bulk
TS13003HVCT A3 TO-92 2Kpcs / Ammo
TS13003HVCT A3G
TO-92 2Kpcs / Ammo
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage V
CBO
900 V
Collector-Emitter Voltage V
CEO
530 V
Emitter-Base Voltage V
EBO
10 V
Collector Current DC I
C
1.5 A
Pulse 3
Maximum Power Dissipation P
D
0.5 W
P
tot
1.96 W
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
STG
- 55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
64
o
C/W
Junction to Ambient Thermal Resistance RӨJ
A
248
o
C/W
Pin
Definition
:
1. Emitter
2. Collector
3. Base
TS13003HV
High Voltage NPN Transistor
2/6
Version: E13
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max
Unit
Static
Collector-Base Voltage I
C
=1mA, I
B
=0 BV
CBO
900 -- -- V
Collector-Emitter Breakdown Voltage I
C
=10mA, I
E
=0 BV
CEO
530 -- -- V
Emitter-Base Breakdown Voltage I
E
=1mA, I
C
=0 BV
EBO
9 -- -- V
Collector Cutoff Current V
CB
=800V, I
E
=0 I
CBO
-- -- 10 uA
Emitter Cutoff Current V
EB
=10V, I
C
= 0 I
EBO
-- -- 0.5 uA
Collector-Emitter Saturation Voltage I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
V
CE(SAT)1
V
CE(SAT)2
V
CE(SAT)3
--
--
--
0.3
0.5
0.9
0.5
1
2 V
Base-Emitter Saturation Voltage I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A V
BE(SAT)1
V
BE(SAT)2
--
-- --
-- 1
1.2 V
DC Current Gain V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=400mA
V
CE
=10V, I
C
=1A
h
FE
15
20
6
--
--
--
40
40
40
Dynamic Characteristics
Frequency V
CE
=10V, I
C
=0.1A f
T
4 -- -- MHz
Output Capacitance V
CB
=10V, f =0.1MHz Cob -- 21 -- pF
Resistive Load Switching Time (Ratings)
Delay Time V
CC
=125V, I
C
=1A,
I
B1
= I
B2
= 0.2A,
t
p
=25uS
Duty Cycle 1%
t
d
-- 0.05 0.2 uS
Rise Time t
r
-- 1.1 -- uS
Storage Time t
STG
-- 2 4 uS
Fall Time t
f
-- 0.4 0.7 uS
Note: pulse test: pulse width 300uS, duty cycle 2%
TS13003HV
High Voltage NPN Transistor
3/6
Version: E13
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. V
CE(SAT)
v.s. V
BE(SAT
Figure 4. Power Derating
Figure 5. Reverse Bias SOA
Figure 6. Safety Operating Area
TS13003HV
High Voltage NPN Transistor
4/6
Version: E13
TO-92 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
TS13003HV
High Voltage NPN Transistor
5/6
Version: E13
TO-92 Ammo Pack Mechanical Drawing
Tape Dimension
Item Description Symbol Dimension
Base of Package to Lead Bend b 3.0 (typ.)
Component Height Ha 23.57 (typ.)
Lead Clinch Height H0 16.0 ±0.5
Component Base Height H1 19.0 ±0.5
Component Top to Lead Bend H2 8.0 (max)
Component Alignment (side / side) Pd 1.02 (max)
Component Alignment (front / back) Hd 0.79 (max)
Feed Hole Pitch P0 12.7 ±0.3
Hole Center to Component Center P1 6.25 ±0.4
Lead Spread F1 2.5 ±0.3
Lead Thickness d 0.46 (typ.)
Cut Lead Length L 10.9 (max)
Taped Lead Length L1 5.31 (typ.)
Taped Lead Thickness t 0.81 ±0.2
Carrier Tape Thickness t1 0.5 ±0.2
Carrier Tape Width W 18.0 ±0.5
Hold – down Tape Width W0 0.5 ±0.2
Hold – down Tape position W1 9.0 ±0.7
Feed Hole Position W2 6.0 ±0.2
Sprocket Hole Diameter D0 4.0 ±0.2
Lead Spring Out S 0.1 (max)
Note: All dimensions are in millimeter.
TS13003HV
High Voltage NPN Transistor
6/6
Version: E13
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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