Innovative PowerTM - 1 - www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
FEATURES
• 3A Output Current
• Wide 4.5V to 18V Operating Input Range
• Synchronous Buck Topology
• Integrated 85mΩ Power MOSFET Switches
• Output Adjustable from 0.923V to 12V
• Up to 95% Efficiency
• Stable with Low ESR Ceramic Output
Capacitors
• Internal Soft Start
• 3mA Low Standby Input Current
• High Light Load Efficiency
• Cycle-by-Cycle Over Current Limit
• Input Under Voltage Lockout
• Hiccup Protection at Short Circuit and Over
Current
• Frequency Fold Back Protection
• Low Power Dissipation at Over Current and
Short Circuit
APPLICATIONS
• LCD-TV
• Set-top Box
• Distributed Power Systems
• Networking Systems
GENERAL DESCRIPTION
ACT2113 is a monolithic synchronous buck
regulator. The device integrates two 85m
MOSFETs, and provides 3A of continuous load
current over a wide input voltage of 4.5V to 18V.
Current mode control provides fast transient
response and cycle-by-cycle current limit. Hiccup at
short circuit reduces IC temperatures.
An internal soft-start prevents inrush current at turn-
on, and in shutdown mode the supply current drops
to 10A. Pulse-skipping mode at light load reduces
standby power down to 3mA.
This device, available in an 8-pin SOP-8EP
package, provides a very compact solution with
minimal external components.
ACT2113
18V/3A Step-Down DC/DC Converter
Rev 3, 23-May-12
®
Efficiency (%)
ACT2113-001
Load Current (mA)
10 100 1000
10000
Efficiency vs. Load Current
VOUT = 5V
VIN = 7.5V
VIN = 12V
VIN = 18V
100
90
80
70
60
50
40
30
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
ORDERING INFORMATION
PART NUMBER OPERATION TEMPERATURE RANGE PACKAGE PINS PACKING
ACT2113YH-T -40°C to 85°C SOP-8EP 8 TAPE & REEL
PIN CONFIGURATION
PIN DESCRIPTIONS
PIN NAME DESCRIPTION
1 HSB
High-Side Bias Input. This pin acts as the positive rail for the high-side switch's gate
driver. Connect a 10nF or greater capacitor between HSB and SW pins.
2 IN
Input Supply. Bypass this pin to GND with a low ESR capacitor. Drive IN with a 4.5V to
18V power source. See Input Capacitor in the Application Information section.
3 SW
Switch Output. Connect this pin to the switching end of the external inductor. Note that
a capacitor is required from SW to HSB to power the high-side switch.
4 GND Ground.
5 FB
Feedback Input. FB senses the output voltage to regulate that voltage. Drive FB with a
resistive voltage divider from the output voltage. The feedback threshold is 0.923V.
See Setting the Output Voltage.
6 COMP
Compensation Node. COMP is used to compensate the regulation control loop. See
Compensation Comp one nts.
7 EN
Enable Input. When higher than 2.5V, this pin turns the IC on. When lower than 2.3V,
this pin turns IC off. When left unconnected, EN is pulled up to logic HIGH with a 2µA
pull-up current. EN is a digital input that turns the regulator on or off.
8 N/C Not connected.
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
ABSOLUTE MAXIMUM RATINGSc
PARAMETER VALUE UNIT
IN to GND -0.3 to + 20 V
SW to GND -1 to VIN + 1 V
HSB to GND VSW - 0.3 to VSW + 6 V
FB, EN, COMP to GND -0.3 to + 6 V
Continuous SW Current Internally limited A
Junction to Ambient Thermal Resistance 46 ˚C/W
Maximum Power Dissipation 0.76 W
Operating Junction Temperature -40 to 150 ˚C
Storage Junction -55 to 150 ˚C
Lead Temperature (Soldering 10 sec.) 300 ˚C
c: Do not exceed these limits to prevent damage to the device. Exposure to Absolute Maximum Rating conditions for long periods may
affect device reliability.
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT
Shutdown Supply Current VEN = 0V 10 20 µA
Supply Current VEN = 3V, VFB = 1.2V 0.75 1.1 mA
Feedback Voltage VFB 4.75V ≤ VIN ≤ 18V 0.909 0.923 0.937 V
Error Amplifier Voltage Gain AEA 400 V/V
Error Amplifier Transconductance GEA IC = ±10A 800 µA/V
High-Side Switch On Resistance RDS(ON)1 85 m
Low-Side Switch On Resistance RDS(ON)2 85 m
Upper Switch Current Limit 50% Duty Cycle 4.5 A
COMP to Current Sense Transconductance GCS 4.5 A/V
Oscillation Frequency Fsw 460 510 570 kHz
Short Circuit Oscillation Frequency 160 kHz
Maximum Duty Cycle DMAX 88 %
EN Lockout Threshold Voltage 2.4 2.6 2.8 V
EN Lockout Hysteresis 75 mV
Input Under Voltage Lockout
Threshold Input Voltage Rising 4 4.2 4.4 V
Internal Soft Startup Time 2 ms
Hiccup Frequency at short circuit 26 Hz
Under Voltage Threshold 0.74 V
Thermal Shutdown Hysteresis Window 30 °C
Thermal Shutdown 160 °C
ELECTRICAL CHARACTERISTICS
(VIN = 12V, TA = 25°C, unless otherwise specified.)
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
FUNCTIONAL BLOCK DIAGRAM
FUNCTIONAL DESCRIPTION
As seen in Function Block Diagram, the ACT2113 is
peak current mode controlled synchronous Buck
converter. The converter operates as follows:
A switching cycle starts when the rising edge of the
Oscillator clock output causes the High-Side Power
Switch to turn on and the Low-Side Power Switch to
turn off. With the SW side of the inductor now
connected to IN, the inductor current ramps up to
store energy in the magnetic field. The inductor
current level is measured by the Current Sense
Amplifier and added to the Oscillator ramp signal. If
the resulting summation is higher than the COMP
voltage, the output of the PWM Comparator goes
high. When this happens or when Oscillator clock
output goes low, the High-Side Power Switch turns
off and the Low-Side Power Switch turns on. The
High-Side Power Switch is driven by logic using
HSB as the positive rail. This pin is charged to VSW
+ 5V when the Low-Side Power Switch turns on.
The COMP voltage is the integration of the error
between FB input and the internal 0.923V
reference. If FB is lower than the reference voltage,
COMP tends to go higher to increase current to the
output to keep the output voltage regulated. The
Oscillator normally switches at 510kHz.
Pulse Skipping Mode
To decrease the power recycling at very light load,
the low-side FET current is sensed to emulate a
diode. When the low-side FET current decreases to
zero, the FET is turned off to avoid negative
inductor current. At no load and very light load,
ACT2113 skips pulse automatically and thus
achieve very high light load efficiency. With load
increasing, ACT2113 goes into Discontinuous
Current Mode (DCM) and then Continuous Current
Mode (CCM).
Soft Startup
The ACT2113 builds in internal soft startup
function. The internal FB reference voltage rises to
steady state of 0.923V in 2ms to avoid inrush input
current during startup.
Under Voltage Protection (UVP)
At output short circuit or over current, the FB
voltage is usually pulled low. To protect the IC at
over current and short circuit, the ACT2113 builds
in Under Voltage Protection (UVP) function. When
ACT2113 detects the FB voltage below 75% of the
0.923V reference, it pulls low COMP voltage and
discharges internal soft-start capacitor and goes
into hiccup mode. The IC restarts in 32ms after
going into hiccup mode. If the short circuit or over
current is clear, the IC restarts back to normal
mode. The UVP is disabled for 6ms starting from
startup. If the output is short at startup, the output
voltage never rises to nominal voltage. During the
6ms period of time, the output current is limited by
cycle-by-cycle current limit. With 32ms shutdown
period, the average input and output current at
short circuit is significantly reduced and the IC is
more reliable.
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
Secondary Over Current Protection
(SOCP)
In normal operation, ACT2113 high-side FET
current is protected by cycle-by-cycle current limit.
In some fault conditions, the input current may run
away. SOCP current limit is set 30% higher than
cycle-by-cycle current limit, and once SOCP is
triggered, ACT2113 goes into hiccup mode and
reduce the power dissipation significantly.
Enable Pin
The ACT2113 has an enable input EN for turning
the IC on or off. The EN pin contains a precision
2.5V comparator with 75mV hysteresis and a 1.3A
pull-up current source. The comparator can be used
with a resistor divider from VIN to program a startup
voltage higher than the normal UVLO value. If left
floating, the EN pin will be pulled up to roughly 5V
by the internal 1.3A current source. It can be
driven from standard logic signals greater than
2.5V, or driven with open-drain logic to provide
digital on/off control.
Thermal Shutdown
The ACT2113 disables switching when its junction
temperature exceeds 160°C and resumes when the
temperature has dropped by 30°C.
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
APPLICATIONS INFORMATION
Output Voltage Setting
Figure 1:
Output Voltage Setting
Figure 1 shows the connections for setting the
output voltage. Select the proper ratio of the two
feedback resistors RFB1 and RFB2 based on the
output voltage. Typically, use RFB2 10k and
determine RFB1 from the following equation:
Table 1:
Recommended Resistance Values
Inductor Selection
The inductor maintains a continuous current to the
output load. This inductor current has a ripple that is
dependent on the inductance value:
Higher inductance reduces the peak-to-peak ripple
current. The trade off for high inductance value is
the increase in inductor core size and series
resistance, and the reduction in current handling
capability. In general, select an inductance value L
based on ripple current requirement:
where VIN is the input voltage, VOUT is the output
voltage, fSW is the switching frequency, ILOADMAX is
the maximum load current, and KRIPPLE is the ripple
factor. Typically, choose KRIPPLE = 20~40% to
correspond to the peak-to-peak inductor ripple
current being 20~40% of the maximum load
current.
With a selected inductor value the peak-to-peak
inductor current is estimated as:
The peak inductor current is estimated as:
The selected inductor should not saturate at ILPK.
The maximum output current is calculated as:
LLIM is the internal current limit, which is typically
4.5A, as shown in Electrical Characteristics Table.
(3)
(
)
SWIN
OUTINOUT
PKLPK fVL VVV
I××
−×
=
−
PKLPKLOADMAXLPK III −
+= 2
1(4)
⎟
⎠
⎞
⎜
⎝
⎛−= 1
923.0
21 V
V
RR OUT
FBFB (1)
(2)
(
)
RIPPLELOADMAXSWIN
OUTINOUT KIfV VVV
L_
×
=
(5)
PKLPK
LIMOUTMAX I
2
1
II _
_
=
VOUT R1 R2
5.0V 47k 10.5k
3.3V 27.4k 10.5k
2.5V 18k 10.5k
1.8V 10.2k 10.5k
1.2V 3.3k 10.5k
1.0V 1k 10.5k
Table 2:
Inductor Values Range and Typical Compensation
VOUT V
IN L COUT R
COMP C
COMP C
COMP2
5.0V 8V ~ 18V 4.7µH ~ 10µH
330µF/10V 25k 2.2nF 220PF
22µF/ Ceramic × 2 10k 2.2nF 220PF
3.3V 6V ~ 18V 3.3µH ~ 8.2µH
330µF/10V 21k 2.2nF 220PF
22µF/ Ceramic × 2 8.2k 2.2nF 220PF
1.8V 4.5V ~ 8V 2.2µH ~ 6.8µH
470µF/10V 12k 4.7nF 220PF
22µF/ Ceramic × 2 8.2k 4.7nF N/A
1.2V 4.5V ~ 6V 2µH ~ 6µH
470µF/10V 12k 10nF 220PF
22µF/ Ceramic × 2 8.2k 10nF N/A
4.5V ~ 5.2V 1.5µH ~ 4.7µH
470µF/10V 10k 10nF 220PF
22µF/ Ceramic × 2 8.2k 10nF N/A
1.0V
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
(6)
ESRRIPPLEOUTMAXRIPPLE RKIV =
OUT
2
SW
INLCf28 V
×
+
APPLICATIONS INFORMATION CONT’D
External High Voltage Bias Diode
It is recommended that an external High Voltage
Bias diode be added when the system has a 5V
fixed input or the power supply generates a 5V
output. This helps improve the efficiency of the
regulator. The High Voltage Bias diode can be a
low cost one such as IN4148 or BAT54.
Figure 2:
External High Voltage Bias Diode
This diode is also recommended for high duty cycle
operation and high output voltage applications.
Input Capacitor
The input capacitor needs to be carefully selected
to maintain sufficiently low ripple at the supply input
of the converter. A low ESR capacitor is highly
recommended. Since large current flows in and out
of this capacitor during switching, its ESR also
affects efficiency.
The input capacitance needs to be higher than
10µF. The best choice is the ceramic type,
however, low ESR tantalum or electrolytic types
may also be used provided that the RMS ripple
current rating is higher than 50% of the output
current. The input capacitor should be placed close
to the IN and G pins of the IC, with the shortest
traces possible. In the case of tantalum or
electrolytic types, they can be further away if a
small parallel 0.1µF ceramic capacitor is placed
right next to the IC.
Output Capacitor
The output capacitor also needs to have low ESR to
keep low output voltage ripple. The output ripple
voltage is:
where IOUTMAX is the maximum output current, KRIPPLE
is the ripple factor, RESR is the ESR of the output
capacitor, fSW is the switching frequency, L is the
inductor value, and COUT is the output capacitance.
In the case of ceramic output capacitors, RESR is very
small and does not contribute to the ripple.
Therefore, a lower capacitance value can be used
for ceramic type. In the case of tantalum or
electrolytic capacitors, the ripple is dominated by
RESR multiplied by the ripple current. In that case, the
output capacitor is chosen to have sufficiently low
ESR.
For ceramic output capacitor, typically choose a
capacitance of about 22µF. For tantalum or
electrolytic capacitors, choose a capacitor with less
than 50m ESR.
Optional Schottky Diode
During the transition between high-side switch and
low-side switch, the body diode of the low-side
power MOSFET conducts the inductor current. The
forward voltage of this body diode is high. An
optional Schottky diode may be paralleled between
the SW pin and GND pin to improve overall
efficiency.
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
PC Board Layout Guidance
When laying out the printed circuit board, the
following checklist should be used to ensure proper
operation of the IC.
1) Arrange the power components to reduce both
the AC loop and DC loop size. AC loop includes
input cap, VIN pin and VIN ground pin, DC loop
includes SW pin, inductor, output capacitor and
ground pin.
2) Place input decoupling ceramic capacitor CIN as
close to IN pin as possible. CIN is connected
power GND with vias or short and wide path.
3) Return FB, COMP and ISET to signal GND pin,
and connect the signal GND to power GND at a
single point for best noise immunity.
4) Use copper plane for power GND for best heat
dissipation and noise immunity.
5) Place feedback resistor close to FB pin.
6) Use short trace connecting HSB-CHSB-SW loop
Figure 3 shows an example of PCB layout.
Figure 4 and Figure 5 give two typical car charger
application schematics and associated BOM list.
Figure 3: PCB Layout
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
Figure 4:
Typical Application Circuit for 1.8V/3A DC-DC Converter
Table 3:
BOM List for 1.8V/3A DC-DC Converter
ITEM REFERENCE DESCRIPTION MANUFACTURER QTY
1 U1 IC, ACT2113YH, SOP-8EP Active-Semi 1
2 C1 Capacitor, Ceramic, 10µF/25V, 1210, SMD Murata, TDK 1
3 C2 Capacitor, Ceramic, 4.7nF/6.3V, 0603, SMD Murata, TDK 1
4 C3 Capacitor, Ceramic, 10nF/25V, 0603, SMD Murata, TDK 1
5 C4,C5 Capacitor, Ceramic, 47µF/10V, 1206, SMD Murata, TDK 2
6 L1 Inductor, 3.3µH, 4A, 20%, SMD Tyco Electronics 1
7 R1 Chip Resistor, 10k, 0603, 1% Murata, TDK 1
8 R2 Chip Resistor, 10.5k, 0603, 1% Murata, TDK 1
9 R3 Chip Resistor, 18k, 0603, 5% Murata, TDK 1
ACT2113
Rev 3, 23-May-12
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Copyright © 2012 Active-Semi, Inc.
Figure 5:
Typical Application Circuit for 5V/3A DC-DC Converter
Table 4:
BOM List for 5V/3A DC-DC Converter
ITEM REFERENCE DESCRIPTION MANUFACTURER QTY
1 U1 IC, ACT2113YH, SOP-8EP Active-Semi 1
2 C1 Capacitor, Ceramic, 10µF/50V, 1210, SMD Murata, TDK 1
3 C2 Capacitor, Ceramic, 2.2nF/6.3V, 0603, SMD Murata, TDK 1
4 C3 Capacitor, Ceramic, 10nF/50V, 0603, SMD Murata, TDK 1
5 C4,C5 Capacitor, Ceramic, 22µF/10V, 1206, SMD Murata, TDK 2
6 L1 Inductor, 4.7µH, 4A, 20% Sumida 1
7 D1 Diode, 75V/150mA, LL4148 Good-ARK 1
8 R1 Chip Resistor, 47k, 0603, 1% Murata, TDK 1
9 R2 Chip Resistor, 10.5k, 0603, 1% Murata, TDK 1
10 R3 Chip Resistor, 24k, 0603, 5% Murata, TDK 1
ACT2113
Rev 3, 23-May-12
®
Innovative PowerTM - 12 - www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
TYPICAL PERFORMANCE CHARACTERISTICS
(L = 4.7µH, CIN = 100µF, COUT = 330µF, Ta = 25°C, RCOMP = 27k, CCOMP1 = 2.2nF, CCOMP2 = N/C)
VIN Voltage (V)
7 9 11 13 15 17 19
ACT2113-003
Frequency vs. VIN
Frequency (kHz)
700
650
600
550
500
450
400
ACT2113-005
0.94
0.93
0.92
0.91
0.9
0.95
FB Voltage (V)
FB Voltage vs. Load Current
Load Current (mA)
0 500
1000 1500
2000 3000 2500
ACT2113-006
FB Voltage vs. IC Temperature
FB Voltage (V)
0.925
0.92
0.915
0.91
0.905
0.9
0.93
0.935
0.94
Temperature (°C)
20 40 60 80 100 120 140
Shutdown Current vs. VIN
ACT2113-007
18
15
12
9
6
3
0
21
Standby Current (µA)
VIN Voltage (V)
4 6 8 10 12 14 16 18 20
ACT2113-004
Frequency vs. FB Voltage
Frequency (kHz)
500
400
300
200
100
0
600
700
800
FB Voltage (V)
0 200
400 600 800
1000
Efficiency (%)
ACT2113-002
Load Current (mA)
10 100 1000
10000
Efficiency vs. Load Current
VOUT = 5V
VIN = 7.5V
VIN = 12V
VIN = 18V
100
90
80
70
60
50
40
30
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
TYPICAL PERFORMANCE CHARACTERISTICS
(L = 4.7µH, CIN = 100µF, COUT = 330µF, Ta = 25°C, RCOMP = 27k, CCOMP1 = 2.2nF, CCOMP2 = N/C)
ACT2113-009
IIN vs. VIN at Output Dead Short
IIN (mA)
120
100
80
60
40
20
0
140
160
180
VIN (V)
6 8 10 12 14 16 18
ACT2113-010
Max Current Limit vs. Duty Cycle
Max Current (A)
5.50
5.00
4.50
4.00
3.50
6.00
6.50
Duty Cycle
10 20 30 40 50 60 70 80
No Load Operation
ACT2113-011
CH1: VRIPPLE, 20mV/div
CH2: SW, 5V/div
TIME: 40µs/div
CH1
CH2
VIN = 12V
V0UT = 5V
50mA Load Operation
ACT2113-012
CH1: VRIPPLE, 20mV/div
CH2: SW, 5V/div
TIME: 2µs/div
CH1
CH2
VIN = 12V
V0UT = 5V
200mA Load Operation
ACT2113-013
CH1
CH2
VIN = 12V
V0UT = 5V
CH1: VRIPPLE, 20mV/div
CH2: SW, 5V/div
TIME: 1µs/div
ACT2113-008
Standby Current vs. VIN
Current (mA)
3
2.5
2
1.5
1
0.5
0
3.5
4
VIN Voltage (V)
6 8 10 12 14 16 18 20
ACT2113
Rev 3, 23-May-12
®
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Copyright © 2012 Active-Semi, Inc.
TYPICAL PERFORMANCE CHARACTERISTICS
(L = 4.7µH, CIN = 100µF, COUT = 330µF, Ta = 25°C, RCOMP = 27k, CCOMP1 = 2.2nF, CCOMP2 = N/C)
3A Load Operation
ACT2113-014
CH1
CH2
VIN = 12V
V0UT = 5V
CH1: VRIPPLE, 50mV/div
CH2: SW, 5V/div
TIME: 1µs/div
ACT2113-015
Load Transient (0A~1.5A)
CH1
CH2
CH1: VOUT, 100mV/div
CH2: ILOAD, 1A/div
TIME: 2ms//div
VIN = 12V
V0UT = 5V
ACT2113-016
Load Transient (1.5A~3A)
CH1
CH2
VIN = 12V
V0UT = 5V
CH1: VOUT, 100mV/div
CH2: ILOAD, 1A/div
TIME: 2ms//div
Start Up with VIN (Load 0A)
ACT2113-017
CH1
CH2
CH1: VIN, 10V/div
CH2: VOUT, 5V/div
CH3: SW, 10V/div
CH4: IL, 2A/div
TIME: 2ms/div
VIN = 12V
V0UT = 5V
CH3
CH4
ACT2113-018
Start Up with VIN (Load 3A)
CH1
CH2
VIN = 12V
V0UT = 5V
CH3
CH4
CH1: VIN, 10V/div
CH2: VOUT, 5V/div
CH3: SW, 10V/div
CH4: IL, 2A/div
TIME: 2ms/div
Start Up with EN (Load 0A)
ACT2113-019
CH1
CH2
VIN = 12V
V0UT = 5V
CH3
CH4
CH1: EN, 5V/div
CH2: VOUT, 5V/div
CH3: SW, 10V/div
CH4: IL, 2A/div
TIME: 2ms/div
ACT2113
Rev 3, 23-May-12
®
Innovative PowerTM - 15 - www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
TYPICAL PERFORMANCE CHARACTERISTICS
(L = 4.7µH, CIN = 100µF, COUT = 330µF, Ta = 25°C, RCOMP = 27k, CCOMP1 = 2.2nF, CCOMP2 = N/C)
ACT2113-020
Start Up with EN (Load 3A)
CH1
CH2
VIN = 12V
V0UT = 5V
CH1: EN, 5V/div
CH2: VOUT, 5V/div
CH3: SW, 10V/div
CH4: IL, 2A/div
TIME: 2ms/div
CH3
CH4
ACT2113-021
Short Circuit
CH1
CH2
CH1: IOUT, 10A/div
CH2: VOUT, 5V/div
CH3: SW, 10V/div
CH4: IL, 5A/div
TIME: 40ms/div
VIN = 12V
V0UT = 5V
CH3
CH4
ACT2113-022
Short Circuit Recovery
CH1
CH2
VIN = 12V
V0UT = 5V
CH1: IOUT, 5A/div
CH2: VOUT, 5V/div
CH3: SW, 10V/div
CH4: IL, 5A/div
TIME: 40ms/div
CH3
CH4
ACT2113-023
Start Up with Output Dead Short
CH1
CH2
VIN = 12V
V0UT = 5V
CH3
CH4
CH1: VIN, 10V/div
CH2: VOUT, 5V/div
CH3: SW, 10V/div
CH4: IL, 5A/div
TIME: 20ms/div
ACT2113
Rev 3, 23-May-12
®
Innovative PowerTM - 16 - www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
PACKAGE OUTLINE
SOP-8EP PACKAGE OUTLINE AND DIMENSIONS
Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each
product to make sure that it is suitable for th eir applicatio ns. Active-Se mi products are not inten ded or aut horized for use
as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of
the use of any product or circuit described in this datasheet, nor does it convey any patent license.
Active-Semi and its logo are trademarks of Active-Semi, Inc. F or more info rmation on this and other products, contact
sales@active-semi.com or visit http://www.active-semi.com.
® is a regi stered trademark of Active-Semi.
SYMBOL
DIMENSION IN
MILLIMETERS
DIMENSION IN
INCHES
MIN MAX MIN MAX
A 1.350 1.700 0.053 0.067
A1 0.000 0.100 0.000 0.004
A2 1.350 1.550 0.053 0.061
b 0.330 0.510 0.013 0.020
c 0.170 0.250 0.007 0.010
D 4.700 5.100 0.185 0.200
D1 3.202 3.402 0.126 0.134
E 3.800 4.000 0.150 0.157
E1 5.800 6.200 0.228 0.244
E2 2.313 2.513 0.091 0.099
e 1.270 TYP 0.050 TYP
L 0.400 1.270 0.016 0.050
0° 8° 0° 8°
