IDD05SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
thinQ! 3G Diode designed for fast switching applications like:
Maximum ratings
Parameter Symbol Conditions Unit
Continuous forward current
IFTC<130 °C 5 A
IF,SM TC=25 °C, tp=10 ms 26
TC=150 °C, tp=10 ms 18
Non-repetitive peak forward current
IF,max TC=25 °C, tp=10 µs 150
∫i2dtTC=25 °C, tp=10 ms 3.2 A2s
TC=150 °C, tp=10 ms 2
Repetitive peak reverse voltage
VRRM Tj=25 °C 600 V
Diode dv/dt ruggedness
dv/dtVR= 0….480 V 50 V/ns
Power dissipation
Ptot TC=25 °C 56 W
Operating and storage temperature
Tj, Tstg -55 ... 175 °C
Soldering temperature, reflow
soldering (max)
Tsold reflow MSL1 260
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
i²t value
Value
Surge non-repetitive forward current,
sine halfwave
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
VDC
600
QC
6
nC
IF; TC< 130 °C
5
Product Summary
Type
Package
Marking
Pin 1
Pin 2
Pin 3
IDD05SG60C
PG-TO252-3
D05G60C
n.c.
A
C
Rev. 2.4 page 1 2013-02-11
IDD05SG60C
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC - - 2.7 K/W
RthJA
SMD version, device
on PCB, minimal
footprint
- - 75
SMD version, device
on PCB, 6 cm2 cooling
area5)
-50 -
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
VDC IR=0.05 mA, Tj=25 °C 600 - - V
Diode forward voltage
VFIF=5 A, Tj=25 °C -2.1 2.3
IF=5 A, Tj=150 °C -2.8 -
Reverse current
IRVR=600 V, Tj=25 °C -0.4 30 µA
VR=600 V, Tj=150 °C -1.5 350
AC characteristics
Total capacitive charge
Qc- 6 - nC
Switching time3) tc- - <10 ns
Total capacitance C
VR=1 V, f=1 MHz -110 -pF
VR=300 V, f=1 MHz -15 -
VR=600 V, f=1 MHz -15 -
1) J-STD20 and JESD22
Values
VR=400 V,IF≤IF,max,
diF/dt=200 A/µs,
Tj=150 °C
Thermal resistance, junction -
ambient
6) Only capacitive charge occuring, guaranteed by design.
4) Under worst case Zth conditions.
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air
2) All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due
to absence of minority carrier injection.
Rev. 2.4 page 2 2013-02-11
IDD05SG60C
1 Power dissipation 2 Diode forward current
Ptot=f(TC); parameter: RthJC(max) IF=f(TC)4); Tj≤175 °C; parameter: D = tp/T
3 Typ. forward characteristic 4 Typ. forward characteristic in surge current
mode
IF=f(VF); tp=400 µs; parameter:TjIF=f(VF); tp=400 µs; parameter: Tj
0
10
20
30
40
50
60
25 50 75 100 125 150 175
Ptot [W]
TC [°C]
1
0.7
0.5
0.3
0.1
0
5
10
15
20
25
30
35
25 50 75 100 125 150 175
IF [A]
TC [°C]
-55ºC
25ºC
100ºC
150ºC
175ºC
0
1
2
3
4
5
6
7
8
0 1 2 3 4
IF [A]
VF[V]
IF
-55ºC
25ºC
100ºC
150ºC
175ºC
0
10
20
30
0246810
IF [A]
VF[V]
IF
Rev. 2.4 page 3 2013-02-11
IDD05SG60C
5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage
QC=f(diF/dt)6); IF≤IF,max IR=f(VR); parameter: Tj
7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage
ZthJC=f(tp); parameter: D = tP/T C=f(VR); TC=25 °C, f=1 MHz
0
1
2
3
4
5
6
7
100 400 700 1000
Qc [nC]
diF/dt [A/µs]
25 °C
100 °C
150 °C
175 °C
-55 °C
10-4
10-3
10-2
10-1
100
101
100 200 300 400 500 600
IR [µA]
VR [V]
10-1 100 101 102 103
0
25
50
75
100
125
150
C [pF]
VR [V]
10-6 10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
ZthJC [K/W]
tp [s]
0
0.01
0.02
0.05
0.1
0.2
0.5
Rev. 2.4 page 4 2013-02-11
IDD05SG60C
9 Typ. C stored energy
EC=f(VR)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0200 400 600
Ec [µJ]
VR [V]
Rev. 2.4 page 5 2013-02-11
IDD05SG60C
PG-TO252-3: Outline
Dimensions in mm/inches
Dimensions in mm/inches
Rev. 2.4 page 6 2013-02-11
IDD05SG60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support , automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system.
Life support systems are intended to be implanted in the human body and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.4 page 7 2013-02-11