PD - 94432B IRHG57110 100V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHG57110 100K Rads (Si) RDS(on) 0.29 ID 1.6A IRHG53110 300K Rads (Si) 0.29 1.6A IRHG54110 500K Rads (Si) 0.29 1.6A 0.31 1.6A IRHG58110 1000K Rads (Si) MO-036AB International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings (Per Die) Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight Units 1.6 1.0 6.4 1.4 0.011 20 130 1.6 0.14 6.5 -55 to 150 A W W/C V mJ A mJ V/ns o 300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 05/02/06 IRHG57110 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) (Per Die) Parameter Min Drain-to-Source Breakdown Voltage 100 -- -- 0.14 -- -- -- -- 0.29 2.0 1.0 -- -- -- -- -- -- 4.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 100 -100 17 4.4 3.9 21 16 30 15 -- BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units -- 10 25 V Test Conditions V GS = 0V, ID = 1.0mA V/C Reference to 25C, ID = 1.0mA VGS = 12V, ID = 1.0A V S( ) BVDSS A nA nC ns A V DS = VGS, I D = 1.0mA VDS > 15V, IDS = 1.0A A VDS= 80V, VGS= 0V VDS = 80V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =12V, ID = 1.6A, VDS = 50V VDD = 50V, ID = 1.6A, VGS =12V, RG = 7.5 nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 370 110 3.4 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 1.6 6.4 1.2 110 380 Test Conditions A V ns nC Tj = 25C, IS = 1.6A, VGS = 0V A Tj = 25C, IF = 1.6A, di/dt 100A/s VDD 25V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units -- -- 90 C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHG57110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA (Per Die) Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Test Conditions Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (MO-036AB) Diode Forward Voltage A 100 2.0 -- -- -- -- -- 4.0 100 -100 10 0.226 100 2.0 -- -- -- -- -- 4.5 100 -100 25 0.246 nA A VGS = 0V, I D = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS = 80V, VGS =0V VGS = 12V, ID = 1.0A -- 0.29 -- 0.31 VGS = 12V, ID = 1.0A -- 1.2 -- 1.2 V VGS = 0V, IS = 1.6A V 1. Part numbers IRHG57110, IRHG53110, IRHG54110 2. Part number IRHG58110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area (Per Die) Ion Energy (MeV) 309 341 VDS Br I LET (MeV/(mg/cm2)) 36.7 59.8 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-12.5V @VGS=-15V @VGS=-20V 80 39.5 100 100 100 100 100 32.5 100 100 100 90 25 20 120 100 80 60 40 20 0 Br I 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHG57110 10 Pre-Irradiation 10 10 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D, ,Drain-to-Source Drain-to-SourceCurrent Current(A) (A) ID I D , Drain-to-Source Current (A) TOP 1 5.0V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 Fig 1. Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 C TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 6.0 6.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 20s PULSE WIDTH 20s PULSE WIDTH TJ = 150 C TJ = 150 C 1 1 10 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 100 100 Fig 2. Typical Output Characteristics 10 5.5 5.0V 5.0V 1 1 0.1 0.10.1 0.1 VDS , Drain-to-Source Voltage (V) 0.1 5.0 VGS VGS 15V 15V 12V 12V 10V 10V 9.0V 9.0V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V BOTTOM 5.0V BOTTOM 5.0V TOP TOP ID = 1.6A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 800 IRHG57110 600 Ciss 400 Coss 200 Crss 0 1 10 ID = 1.6A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 4 VDS , Drain-to-Source Voltage (V) 10 1 TJ = 25 C V GS = 0 V 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 16 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 10 0.6 12 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 0.4 8 QG , Total Gate Charge (nC) 1.4 1 1ms 10ms Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHG57110 Pre-Irradiation 1.6 RD V DS VGS ID , Drain Current (A) 1.3 D.U.T. RG + -V DD VGS 1.0 Pulse Width 1 s Duty Factor 0.1 % 0.6 Fig 10a. Switching Time Test Circuit VDS 0.3 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRHG57110 15V DRIVER L VDS D.U.T. RG IAS VGS 20V tp + V - DD 0.01 Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) Pre-Irradiation 300 TOP 250 BOTTOM 200 150 100 50 0 25 V(BR)DSS ID 0.7A 1.0A 1.6A 50 75 100 125 150 Starting TJ , Junction Temperature ( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHG57110 Pre-Irradiation Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 100mH, Peak IL = 1.6A, VGS =12V A I SD 1.6A, di/dt 340A/s, VDD 100V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A A Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions -- MO-036AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2006 8 www.irf.com