RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036)
05/02/06
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MO-036AB
IRHG57110
100V, Quad N-CHANNEL
TECHNOLOGY
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow Total Gate Charge
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nCeramic Package
n Light Weight
55
Product Summary
Part Number Radiation Level RDS(on) ID
IRHG57110 100K Rads (Si) 0.29 Ω 1.6A
IRHG53110 300K Rads (Si) 0.29 Ω 1.6A
IRHG54110 500K Rads (Si) 0.29 Ω 1.6A
IRHG58110 1000K Rads (Si) 0.31Ω 1.6A
Absolute Maximum Ratings (Per Die)
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 1.6
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 1.0
IDM Pulsed Drain Current À 6.4
PD @ TC = 25°C Max. Power Dissipation 1.4 W
Linear Derating Factor 0.011 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á 130 mJ
IAR Avalanche Current À 1.6 A
EAR Repetitive Avalanche Energy À 0.14 mJ
dv/dt Peak Diode Recovery dv/dt  6.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)
Weight 1.3 (Typical) g
oC
A
For footnotes refer to the last page
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
PD - 94432B
IRHG57110 Pre-Irradiation
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For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 1.6
ISM Pulse Source Current (Body Diode) À— — 6.4
VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 1.6A, VGS = 0V Ã
trr Reverse Recovery Time — — 110 ns Tj = 25°C, IF = 1.6A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 380 nC VDD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.14 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.29 VGS = 12V, ID = 1.0A
Resistance
VGS(th) Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 1.0 — S ( )V
DS > 15V, IDS = 1.0A Ã
IDSS Zero Gate Voltage Drain Current — — 10 VDS= 80V, VGS= 0V
——25 V
DS = 80V,
VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 17 VGS =12V, ID = 1.6A,
Qgs Gate-to-Source Charge — — 4.4 nC VDS = 50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 3.9
td(on) Turn-On Delay Time — — 21 VDD = 50V, ID = 1.6A,
trRise Time — — 16 VGS =12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 30
tfFall Time — — 15
LS + LDTotal Inductance — 10 — Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss Input Capacitance — 370 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 110 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 3.4 —
nA
Ω
Ã
nH
ns
µA
Ω
—
—
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
Thermal Resistance (Per Die)
Parameter Min Typ Max Units Test Conditions
RthJA Junction-to-Ambient — — 90 Typical socket mount
°C/W
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Pre-Irradiation IRHG57110
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
Parameter Up to 500K Rads(Si)1
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.0 2.0 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 80V, VGS =0V
RDS(on) Static Drain-to-Source à — 0.226 — 0.246 Ω VGS = 12V, ID = 1.0A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source à — 0.29 — 0.31 Ω VGS = 12V, ID = 1.0A
On-State Resistance (MO-036AB)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHG57110, IRHG53110, IRHG54110
2. Part number IRHG58110
VSD Diode Forward Voltage à — 1.2 — 1.2 V VGS = 0V, IS = 1.6A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
1000K Rads (Si)2
For footnotes refer to the last page
Fig a. Single Event Effect, Safe Operating Area
Table 2. Single Event Effect Safe Operating Area (Per Die)
@VGS=-20V
0
20
40
60
80
100
120
-20-15-10-50
VGS
VDS
Br
I
I on L ET Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-12.5V @VGS=-15V
Br 36.7 309 39.5 100 100 100 100 100
I 59.8 341 32.5 100 100 100 90 25 80
20
IRHG57110 Pre-Irradiation
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
5.0 5.5 6.0 6.5
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
1.6A
0.1
1
10
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
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Pre-Irradiation IRHG57110
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
200
400
600
800
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
04812 16
0
4
8
12
16
20
Q , Total Gate Charge (n C )
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.6A
V = 20V
DS
V = 50V
DS
V = 80V
DS
0.1
1
10
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1 10 100 1000
VDS , Dr ain-toSource Volt age (V)
0.1
1
10
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Singl e Pul se
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
IRHG57110 Pre-Irradiation
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Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
25 50 75 100 125 150
0.0
0.3
0.6
1.0
1.3
1.6
T , C a se Temperatu re ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100 1000
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(TH ERMAL RESPONSE)
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Pre-Irradiation IRHG57110
QG
QGS QGD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
VGS
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperat ure( C)
E , Si ngl e Pulse Avalanche Energy (m J)
J
AS
°
ID
TOP
BOTTOM
0.7A
1.0A
1.6A
IRHG57110 Pre-Irradiation
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Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 100mH,
Peak IL = 1.6A, VGS =12V
 ISD ≤ 1.6A, di/dt ≤ 340A/µs,
VDD ≤ 100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — MO-036AB
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
