10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet flowPACK E1 600 V / 50 A Features flow E1 12 mm housing TrenchstopTM IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Press-fit pin Solder pin Schematic Target applications Industrial Drives Types 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z Maximum Ratings Tj = 25 C, unless otherwise specified Parameter Symbol Condition Value Unit VCES 600 V IC 50 A 150 A 95 W 20 V 6 s 175 C Inverter Switch Collector-emitter voltage Collector current Repetitive peak collector current ICRM tp limited by Tjmax Total power dissipation Ptot Tj = Tjmax Gate-emitter voltage VGES Short circuit ratings tSC Maximum junction temperature Copyright Vincotech Ts = 80 C VGE = 15 V Vcc = 360 V Tjmax 1 Tj = 150 C 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Maximum Ratings Tj = 25 C, unless otherwise specified Parameter Symbol Condition Value Unit 600 V 46 A 100 A 67 W Inverter Diode Peak repetitive reverse voltage Continuous (direct) forward current VRRM IF Tj = Tjmax Ts = 80 C Repetitive peak forward current IFRM Total power dissipation Ptot Maximum junction temperature Tjmax 175 C LP 25 nH Storage temperature Tstg -40...+125 C Operation temperature under switching condition Tjop -40...(Tjmax - 25) C tp = 2 s 6000 V tp = 1 min 2500 V min. 12,7 mm 8,62 mm Tj = Tjmax Ts = 80 C Module Properties General Properties Stray inductance Thermal Properties Isolation Properties DC Test Voltage* Isolation voltage Visol AC Voltage Creepage distance Clearance Comparative Tracking Index CTI 600 *100 % tested in production Copyright Vincotech 2 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [C] Unit Min Typ Max 5 5,8 6,5 1,05 1,57 1,76 1,85 Inverter Switch Static Gate-emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCEsat VGE = VCE 15 0,0008 25 50 25 125 150 V V 1,80 Collector-emitter cut-off current ICES 0 600 25 2,6 A Gate-emitter leakage current IGES 20 0 25 600 nA Internal gate resistance rg none Input capacitance Cies 3140 Output capacitance Coes Reverse transfer capacitance Cres f = 1 Mhz 0 25 25 200 pF 93 Thermal Thermal resistance junction to sink Rth(j-s) paste = 3,4 W/mK (PSX) 1,00 K/W Dynamic Turn-on delay time Rise time Turn-off delay time td(on) tr td(off) Rgon = 8 Rgoff = 8 15 Fall time tf Turn-on energy (per pulse)* Eon Turn-off energy (per pulse)* Eoff QrFWD = 2,3 C QrFWD = 4,4 C 300 50 25 150 25 150 25 150 25 150 25 150 25 150 95 100 14 18 161 184 109 131 0,675 1,02 1,30 1,76 ns mWs * Ls = 14 nH Copyright Vincotech 3 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [C] Min Unit Typ Max 1,64 1,56 1,54 1,9 Inverter Diode Static Forward voltage VF Reverse leakage current IR 50 600 25 125 150 25 V 27 A Thermal Thermal resistance junction to sink Rth(j-s) paste = 3,4 W/mK (PSX) 1,41 K/W Dynamic Peak recovery current IRRM Reverse recovery time trr Recovered charge Qr Reverse recovered energy Erec Peak rate of fall of recovery current di/dt = 3939 A/s 15 di/dt = 3496 A/s (dirf/dt)max 300 50 25 150 25 150 25 150 25 150 25 150 52 62 130 172 2,29 4,37 0,515 0,92 3909 2375 A ns C mWs A/s Thermistor Rated resistance R Deviation of R100 R/R Power dissipation 25 R100 = 493 100 P Power dissipation constant 5 -5 k +5 % 25 245 mW 25 1,4 mW/K B-value B(25/50) Tol. 2 % 25 3375 K B-value B(25/100) Tol. 2 % 25 3437 K Vincotech NTC Reference Copyright Vincotech K 4 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Inverter Switch Characteristics figure 1. IGBT figure 2. IGBT Typical output characteristics Typical out put charact erist ics I C = f(V CE) I C = f(V CE) 150 I C (A) I C (A) 150 VGE : 7V 8V 9V 120 120 10 V 11 V 12 V 13 V 14 V 15 V 90 90 16 V 17 V 60 60 30 30 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 s V GE = 15 V 25 T j: C tp = 250 125 C Tj = 150 150 C V GE from 7 V to 17 V in steps of 1 V figure 3. IGBT s C figure 4. IGBT Typical transf er charact erist ics Transient t hermal impedance as f unction of pulse duration I C = f(V GE) Z th(j-s) = f(t p) 50 IC Z t h(j h(j--s)(K/W) (A) 100 40 10-1 30 20 0,5 10-2 0,2 0,1 0,05 10 0,02 0,01 0,005 0 10-3 10-5 0 0 2 4 6 8 10 12 10-4 10-3 10-2 V G E (V) tp = 100 s V CE = 10 V 25 T j: C D = 125 C Copyright Vincotech 100 101 t p (s) 102 tp / T R th(j-s) = 150 C 10-1 1,00 K/W IGBT thermal model values 5 R (K/W) 1,45E-01 (s) 7,02E-01 5,28E-01 9,42E-02 2,00E-01 2,95E-02 8,09E-02 5,41E-03 4,17E-02 5,79E-04 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Inverter Switch Characteristics figure 5. IGBT Saf e operating area I C = f(V CE) I C (A) 1000 1ms 10ms 100s 10s 100ms 100 DC 10 1 0,1 0,01 1 10 100 1000 V C E (V) D = single pulse Ts = 80 C V GE = Tj = 15 T jmax V Copyright Vincotech 6 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Inverter Diode Characteristics figure 1. FWD figure 2. FWD Typical f orward charact erist ics Transient t hermal impedance as a f unct ion of pulse widt h I F = f(V F) Z th(j-s) = f(t p) 150 Z t h(j h(j--s) (K/W) IF (A) 101 120 100 90 60 0,5 10-1 0,2 0,1 0,05 30 0,02 0,01 0,005 0 10-2 0 0 0,5 1 1,5 2 2,5 10-4 3 10-3 10-2 VF (V) tp = 250 s T j: 25 10-1 100 101 102 t p (s) D = tp / T 125 C C R th(j-s) = 1,41 150 C FWD thermal model values R (K/W) K/W 7,38E-02 (s) 2,82E+00 1,47E-01 4,00E-01 6,53E-01 7,18E-02 3,22E-01 2,02E-02 1,24E-01 4,33E-03 9,40E-02 4,82E-04 Thermistor Characteristics figure 1. Typical Thermistor resistance values Thermistor Typical NTC characteristic as a function of temperature R = f(T ) NTC-typical temperature characteristic R () 5000 4000 3000 2000 1000 0 25 50 75 100 125 T (C) Copyright Vincotech 7 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Inverter Switching Characteristics figure 1. IGBT figure 2. IGBT Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(R g) 3 E ( mWs) E (mWs) Typical swit ching energy losses as a f unction of collector current Eoff 2,5 2,5 Eon 2 Eo n Eoff Eo ff Eon 2 1,5 3 1,5 Eoff Eo n 1 1 0,5 0,5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 I C (A) With an induc tive load at 300 V V CE = V GE = 15 25 C T j: 10 150 C V V GE = IC = R gon = 8 R goff = 8 20 With an inductive load at 300 V V CE = figure 3. FWD 15 V 50 A 30 T j: FWD Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(R g) E ( mWs) 1,6 40 150 C figure 4. Typical reverse recovered energy loss as a f unction of collect or current E (mWs) R g ( ) 25 C 1,2 Erec 0,9 1,2 Erec 0,6 0,8 Erec Erec 0,3 0,4 0 0 0 20 40 With an induc tive load at 300 V V CE = 15 V V GE = R gon = 8 Copyright Vincotech 60 T j: 80 I C (A) 0 100 25 C 10 20 With an inductive load at 300 V V CE = 15 V V GE = 150 C IC= 8 50 30 T j: R g ( ) 40 25 C 150 C A 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Inverter Switching Characteristics figure 5. IGBT figure 6. IGBT Typical swit ching t imes as a f unction of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(R g) 1 t ( s) t ( s) 1 td(off ) td(on) td(off ) tf tf 0,1 0,1 td(on) tr tr 0,01 0,01 0,001 0,001 0 20 40 60 80 0 100 I C (A) (A) With an induc tive load at 150 C Tj= 300 V V CE = 10 20 30 R g ( ) 40 With an inductive load at 150 C Tj= 300 V V CE = V GE = 15 V V GE = R gon = 8 IC = R goff = 8 figure 7. FWD 15 V 50 A figure 8. FWD Typical reverse recovery t ime as a f unct ion of IGBT turn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,4 0,4 t rr (s) t rr (s) Typical reverse recovery t ime as a f unction of collector current 0,3 trr trr 0,3 trr 0,2 0,2 trr 0,1 0,1 0 0 0 20 40 60 80 100 0 I C (A) At 300 V V GE = 15 V R gon = 8 V CE= Copyright Vincotech T j: 10 20 30 40 R g on () At 25 C V CE = V GE = 150 C IC= 9 300 V 15 V 50 A T j: 25 C 150 C 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Inverter Switching Characteristics figure 9. FWD figure 10. FWD Typical recovered charge as a f unct ion of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 8 6 Q r (C) Q r ( C) Typical recovered charge as a f unction of collect or current 5 Qr 6 Qr 4 4 3 Qr Qr 2 2 1 0 At 0 0 20 40 60 80 100 0 10 20 30 40 R g on () I C (A) 300 V V GE = 15 V R gon = 8 At V CE = T j: At 25 C VCE= V GE = 150 C I C= figure 11. FWD 300 V 15 V 50 A T j: 25 C 150 C figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resistor I RM = f(I C) I RM = f(R gon) 80 I R M (A) I R M (A) 120 IRM 90 60 IRM 40 60 20 30 IR M I RM 0 0 0 At 20 40 300 V V GE = 15 V R gon = 8 V CE = Copyright Vincotech 60 T j: 80 I C (A) 0 100 10 20 30 40 R g o n () At 25 C V CE = V GE = 150 C IC= 10 300 V 15 V 50 A T j: 25 C 150 C 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Inverter Switching Characteristics figure 13. FWD figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gat e resist or di F/dt , di rr/dt = f(I C) di F/dt , di rr/dt = f(R gon) 12000 d i /d t (A/ (A/ s) d i /dt (A/s) 5000 di F / dt di r r /dt 4000 diF / dt di r r / dt 9000 3000 6000 2000 3000 1000 0 0 0 20 40 60 80 0 100 10 20 30 I C (A) 300 V V GE = 15 V R gon = 8 At V CE = T j: At 25 C V CE = V GE = 150 C I C= figure 15. 300 V 15 V 50 A T j: 40 R g o n () 25 C 150 C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 120 I C MAX I c CHIP 100 MODULE 80 Ic 60 V CE MAX 40 20 0 0 100 200 300 400 500 600 700 V C E (V) At 150 C R gon = 8 R goff = 8 Tj = Copyright Vincotech 11 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Inverter Switching Definitions Tj General conditions = 125 C R gon R goff figure 1. = = IGBT figure 2. Turn-of f Swit ching Wavef orms & def init ion of t doff , t Eoff (t Eoff = int egrating t ime f or Eoff ) IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (t Eon = int egrat ing t ime f or Eon) tdoff % 8 8 % VGE 90% VCE 90% IC IC VGE VGE VCE tdon tEoff IC 1% VCE VCE 3% IC 10% VGE 10% tEon t (s) -15 V V GE (100%) = 15 V C (100%) = 300 I C (100%) = t doff = V GE (0%) = t (s) V GE (0%) = -15 V V V GE (100%) = 15 V V V C (100%) = 300 V 50 A I C (100%) = 50 A 184 ns t don = 100 ns figure 3. IGBT figure 4. Turn-of f Swit ching Wavef orms & def init ion of t f % IGBT Turn-on Swit ching Wavef orms & def init ion of t r fitted % IC IC IC 90% IC 60% VCE IC 40% tr IC 90% IC10% VCE IC 10% tf t ( s) t (s) 300 V I C (100%) = 50 A I C (100%) = 50 A tf= 131 ns tr = 18 ns V C (100%) = Copyright Vincotech V C (100%) = 12 300 V 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Inverter Switching Characteristics figure 5. FWD figure 6. Turn-of f Swit ching Wavef orms & def init ion of t rr FWD Turn-on Swit ching Wavef orms & def init ion of t Qr (t Qr = int egrating t ime f or Qr) % % Qr trr tQr fitted IF IF IRRM 10% VF IRRM 90% IRRM 100% t (s) t (s) V F (100%) = 300 V I F (100%) = 50 A Q r (100%) = 4,37 C I F (100%) = 50 A I RRM (100%) = 62 A t rr = 172 ns Copyright Vincotech 13 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Ordering Code & Marking Version without thermal paste 12 mm housing with press-fit pins with thermal paste 12 mm housing with press-fit pins Ordering Code 10-EZ066PA050SA-L855F38T 10-EZ066PA050SA-L855F38T-/3/ without thermal paste 12 mm housing with solder pins with thermal paste 12 mm housing with solder pins 10-E1066PA050SA-L855F38Z 10-E1066PA050SA-L855F38Z-/3/ Text N N -NNNNNNNNNNNNNN T T TTTTVV WWYY U L V I N L LLLL S S SS Datamatrix Name Date code UL & VIN Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WW YY UL VIN LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table Pin X Y 1 2 12,8 9,6 16 9,6 DC+ 3 22,4 9,6 Therm1 4 25,6 9,6 Therm2 5 32 9,6 DC-2 6 32 6,4 S13 7 32 3,2 DC-1 8 32 0 S11 9 28,8 0 G11 10 6,4 0 Ph1 11 12 13 3,2 0 0 0 0 6,4 Ph1 G12 G14 14 0 16 Ph2 15 0 19,2 Ph2 16 0 25,6 G16 17 3,2 25,6 Ph3 18 6,4 25,6 Ph3 19 28,8 25,6 G15 20 32 25,6 S15 21 32 22,4 DC-3 22 32 16 G13 Copyright Vincotech Function DC+ L855F38Z L855F38T 14 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Pinout Identification ID Component Voltage Current Function T11, T12, T13, T14, T15, T16 IGBT 600 V 50 A Inverter Switch D11, D12, D13, D14, D15, D16 FWD 600 V 50 A Inverter Diode Rt NTC Copyright Vincotech Comment Thermistor 15 05 Oct. 2018 / Revision 2 10-EZ066PA050SA-L855F38T 10-E1066PA050SA-L855F38Z datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow E1 packages see vincotech.com website. Package data Package data for flow E1 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: Modification: Pages 10-Ex066PA050SA-L855F38x-D2-14 26 Oct. 2018 Added Z option to ordering options All DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together "information") are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader's sole responsibility to test and determine the suitability of the information and the product for reader's intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 16 05 Oct. 2018 / Revision 2