10-EZ066PA050SA-L855F38T - Vincotech

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 1 Copyright Vincotech

Maximum Ratings

T

j

= 25 °C, unless otherwise specified

Parameter Symbol Condition Value Unit

flowPACK E1

600 V / 50 A

Features flow E1 12 mm housing

● Trenchstop™ IGBT3 technology

● Standard industrial housing

● Optimized R

th(j-s)

with Phase Change Material

● Built-in NTC

Schematic

Target applications

● Industrial Drives

Types

● 10-EZ066PA050SA-L855F38T

● 10-E1066PA050SA-L855F38Z

Inverter Switch

Collector-emitter voltage V

CES

600 V

Collector current I

C

50 A

Repetitive peak collector current I

CRM

t

p

limited by T

jmax

150 A

Total power dissipation P

tot

T

j

= T

jmax

T

s

= 80 °C 95 W

Gate-emitter voltage V

GES

±20 V

Short circuit ratings t

SC

V

GE

= 15 V V

cc

= 360 V T

j

= 150 °C 6 µs

Maximum junction temperature T

jmax

175 °C

Press-fit pin Solder pin

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 2 Copyright Vincotech

Maximum Ratings

T

j

= 25 °C, unless otherwise specified

Parameter Symbol Condition Value Unit

Inverter Diode

Peak repetitive reverse voltage V

RRM

600 V

Continuous (direct) forward current I

F

T

j

= T

jmax

T

s

= 80 °C 46 A

Repetitive peak forward current I

FRM

100 A

Total power dissipation P

tot

T

j

= T

jmax

T

s

= 80 °C 67 W

Maximum junction temperature T

jmax

175 °C

Module Properties

General Properties

Stray inductance L

P

25 nH

Thermal Properties

Storage temperature T

stg

-40…+125 °C

Operation temperature under switching condition T

jop

-40…(T

jmax

- 25) °C

Isolation Properties

Isolation voltage V

isol

DC Test Voltage* t

p

= 2 s 6000 V

AC Voltage t

p

= 1 min 2500 V

Creepage distance min. 12,7 mm

Clearance 8,62 mm

Comparative Tracking Index CTI ≥ 600

*100 % tested in production

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 3 Copyright Vincotech

Characteristic Values

Parameter Symbol Conditions Value Unit

V

GE

[V]

V

GS

[V]

V

CE

[V]

V

DS

[V]

V

F

[V]

I

C

[A]

I

D

[A]

I

F

[A]

T

j

[°C] Min Typ Max

Inverter Switch

Static

Gate-emitter threshold voltage V

GE(th)

V

GE

= V

CE

0,0008 25 5 5,8 6,5 V

Collector-emitter saturation voltage V

CEsat

15 50

25 1,05 1,57 1,85

V 125 1,76

150 1,80

Collector-emitter cut-off current I

CES

0 600 25 2,6 µA

Gate-emitter leakage current I

GES

20 0 25 600 nA

Internal gate resistance r

g

none Ω

Input capacitance C

ies

f

= 1 Mhz 0 25 25

3140

pF

Output capacitance C

oes

200

Reverse transfer capacitance C

res

93

Thermal

Thermal resistance junction to sink R

th(j-s)

λpaste = 3,4 W/mK

(PSX)

1,00 K/W

Dynamic

Turn-on delay time t

d(on)

R

gon

= 8 Ω

±15 300 50

25 95

ns

150 100

Rise time t

r

25 14

150 18

Turn-off delay time t

d(off)

R

goff

= 8 Ω 25 161

150 184

Fall time t

f

25 109

150 131

Turn-on energy (per pulse)* E

on

Q

rFWD

= 2,3 μC 25 0,675

mWs

Q

rFWD

= 4,4 μC 150 1,02

Turn-off energy (per pulse)* E

off

25 1,30

150 1,76

* L

s

= 14 nH

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 4 Copyright Vincotech

Characteristic Values

Parameter Symbol Conditions Value Unit

V

GE

[V]

V

GS

[V]

V

CE

[V]

V

DS

[V]

V

F

[V]

I

C

[A]

I

D

[A]

I

F

[A]

T

j

[°C] Min Typ Max

Inverter Diode

Static

Forward voltage V

F

50

25 1,64 1,9

V 125 1,56

150 1,54

Reverse leakage current I

R

600 25 27 µA

Thermal

Thermal resistance junction to sink R

th(j-s)

λpaste = 3,4 W/mK

(PSX)

1,41 K/W

Dynamic

Peak recovery current I

RRM

±15 300 50

25 52 A

150 62

Reverse recovery time t

rr

25 130 ns

150 172

Recovered charge Q

r

di/dt = 3939 A/μs 25 2,29 μC

di/dt = 3496 A/μs 150 4,37

Reverse recovered energy E

rec

25 0,515 mWs

150 0,92

Peak rate of fall of recovery current (di

rf

/dt)

max

25 3909 A/µs

150 2375

Thermistor

Rated resistance R 25 5 kΩ

Deviation of R

100

Δ

R/R

R

100

= 493 Ω 100 -5 +5 %

Power dissipation P 25 245 mW

Power dissipation constant 25 1,4 mW/K

B-value B

(25/50)

Tol. ±2 % 25 3375 K

B-value B

(25/100)

Tol. ±2 % 25 3437 K

Vincotech NTC Reference K

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 5 Copyright Vincotech

Inverter Switch Characteristics

figure 1. IGBT figure 2. IGBT

Typical output characteristics Typical out put characteristics

I

C

= f(V

CE

) I

C

= f(V

CE

)

t

p

= 250 μs 25 °C t

p

= 250 μs

V

GE

= 15 V 125 °C T

j

= 150 °C

150 °C V

GE

from 7 V to 17 V in steps of 1 V

figure 3. IGBT figure 4. IGBT

Typical transfer characterist ics Transient t hermal impedance as function of pulse duration

I

C

= f(V

GE

) Z

th(j-s)

= f(t

p

)

t

p

= 100 μs 25 °C D = t

p

/ T

V

CE

= 10 V 125 °C R

th(j-s)

= 1,00 K/W

150 °C

R

(K/W)

τ

(s)

1,45E-01 7,02E-01

5,28E-01 9,42E-02

2,00E-01 2,95E-02

8,09E-02 5,41E-03

4,17E-02 5,79E-04

IGBT thermal model values

T

j

:

T

j

:

0

10

20

30

40

50

0 2 4 6 8 10 12

I

C

(A)

V

VV

V

G E

G E G E

G E

(V)

0

30

60

90

120

150

012345

I

C

(A)

V

VV

V

C E

C EC E

C E

(V)

0

30

60

90

120

150

012345

I

C

(A)

V

VV

V

C E

C EC E

C E

(V)

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

V

GE

:

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

Z

t h (j

t h (j-

-

-s)

s)

(K/W)

t

tt

t

p

pp

p

(s)

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

-3

10

-2

10

-1

10

0

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 6 Copyright Vincotech

Inverter Switch Characteristics

figure 5. IGBT

Safe operating area

I

C

= f(V

CE

)

D = single pulse

T

s

= 80 ºC

V

GE

= ±15 V

T

j

=T

jmax

DC

100ms 10ms 1ms 100µs 10µs

0,01

0,1

1

10

100

1000

1 10 100 1000

I

C

(A)

V

VV

V

C E

C EC E

C E

(V)

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 7 Copyright Vincotech

Inverter Diode Characteristics

figure 1. FWD figure 2. FWD

Typical forward characterist ics Transient t hermal impedance as a funct ion of pulse width

I

F

= f(V

F

)Z

th(j-s)

= f(t

p

)

t

p

= 250 μs 25 °C D = t

p

/ T

125 °C R

th(j-s)

= 1,41 K/W

150 °C FWD thermal model values

R (K/W)

τ

(s)

7,38E-02 2,82E+00

1,47E-01 4,00E-01

6,53E-01 7,18E-02

3,22E-01 2,02E-02

1,24E-01 4,33E-03

9,40E-02 4,82E-04

T

j

:

0

30

60

90

120

150

0 0,5 1 1,5 2 2,5 3

I

F

(A)

V

F

(V)

Z

t h (j

-

s)

(K/W)

t

tt

t

p

pp

p

(s)

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

Thermistor Characteristics

figure 1. Thermistor Typical Thermistor resistance values

Typical NTC characteristic

as a function of temperature

R = f(T)

0

1000

2000

3000

4000

5000

25 50 75 100 125

R (Ω)

T(°C)

NTC-typical temperature characteristic

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 8 Copyright Vincotech

Inverter Switching Characteristics

figure 1. IGBT figure 2. IGBT

Typical switching energy losses as a function of collector current Typical switching energy losses as a funct ion of gate resistor

E = f(I

C

)E = f(R

g

)

With an inductive load at 25 °C With an inductive load at 25 °C

V

CE

=300 V 150 °C V

CE

=300 V 150 °C

V

GE

=±15 V V

GE

=±15 V

R

gon

=8 Ω I

C

= 50 A

R

goff

= 8 Ω

figure 3. FWD figure 4. FWD

Typical reverse recovered energy loss as a function of collector current Typical reverse recovered energy loss as a function of gate resistor

E

rec

= f(I

c

)E

rec

= f(R

g

)

With an inductive load at 25 °C With an inductive load at 25 °C

V

CE

=300 V 150 °C V

CE

=300 V 150 °C

V

GE

=±15 V V

GE

=±15 V

R

gon

=8 Ω I

C

=50 A

T

j

:T

j

:

T

j

:T

j

:

E

rec

E

rec

0

0,4

0,8

1,2

1,6

0 20 40 60 80 100

E

(mWs)

I

II

I

C

C C

C

(A)

(A)(A)

(A)

E

rec

E

rec

0

0,3

0,6

0,9

1,2

0 10 20 30 40

E

(mWs)

R

RR

R

g

g g

g

(

((

(

Ω)

Ω)Ω)

Ω)

E

on

on on

on

E

on

ono n

on

E

off

off off

off

E

off

0

0,5

1

1,5

2

2,5

3

0 10 20 30 40 50 60 70 80 90 100

E

(mWs)

I

II

I

C

C C

C

(A)

(A)(A)

(A)

E

on

on on

on

E

off

E

on

E

off

offo ff

off

0

0,5

1

1,5

2

2,5

3

0 10 20 30 40

E

(mWs)

R

RR

R

g

g g

g

(

((

(

Ω)

Ω)Ω)

Ω)

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 9 Copyright Vincotech

Inverter Switching Characteristics

figure 5. IGBT figure 6. IGBT

Typical switching t imes as a function of collector current Typical swit ching t imes as a funct ion of gate resistor

t = f(I

C

)t = f(R

g

)

With an inductive load at With an inductive load at

T

j

= 150 °C T

j

= 150 °C

V

CE

=300 V V

CE

=300 V

V

GE

=±15 V V

GE

=±15 V

R

gon

=8 Ω I

C

= 50 A

R

goff

= 8 Ω

figure 7. FWD figure 8. FWD

Typical reverse recovery time as a function of collector current Typical reverse recovery time as a funct ion of IGBT turn on gate resistor

t

rr

= f(I

C

)t

rr

= f(R

gon

)

At V

CE

=

300 V 25 °C At V

CE

=

300 V 25 °C

V

GE

=±15 V 150 °C V

GE

=±15 V 150 °C

R

gon

=8 Ω I

C

=50 A

T

j

:T

j

:

td( off )

t

tt

t

f

ff

f

td(on)

tr

0,001

0,01

0,1

1

0 20 40 60 80 100

t

(

μ

s)

I

II

I

C

C C

C

(A

(A(A

(A

)

))

)

td( off )

t

tt

t

f

ff

f

td(on)

tr

0,001

0,01

0,1

1

0 10 20 30 40

t

(

μ

s)

R

RR

R

g

g g

g

(

((

(

Ω)

Ω)Ω)

Ω)

trr

0

0,1

0,2

0,3

0,4

0 10 20 30 40

t

rr

(

μ

s)

R

RR

R

g o n

g o n g o n

g o n

(

((

(

Ω)

Ω)Ω)

Ω)

trr

0

0,1

0,2

0,3

0,4

0 20 40 60 80 100

t

rr

(

μ

s)

I

II

I

C

CC

C

(A)

(A)(A)

(A)

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 10 Copyright Vincotech

Inverter Switching Characteristics

figure 9. FWD figure 10. FWD

Typical recovered charge as a function of collector current Typical recovered charge as a function of IGBT turn on gate resistor

Q

r

= f(I

C

)Q

r

= f(R

gon

)

At

At V

CE

=

300 V 25 °C At V

CE

=

300 V 25 °C

V

GE

=±15 V 150 °C V

GE

= ±15 V 150 °C

R

gon

=8 Ω I

C

=50 A

figure 11. FWD figure 12. FWD

Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I

RM

= f(I

C

)I

RM

= f(R

gon

)

At V

CE

=

300 V 25 °C At V

CE

=

300 V 25 °C

V

GE

=±15 V 150 °C V

GE

= ±15 V 150 °C

R

gon

=8 Ω I

C

=50 A

T

j

:T

j

:

T

j

:T

j

:

I

II

I

RM

RMRM

RM

I

II

I

R M

R MR M

R M

0

30

60

90

120

0 10 20 30 40

I

R M

(A)

R

RR

R

go n

go n go n

go n

(

((

(

Ω)

Ω)Ω)

Ω)

Q

r

Q

r

0

1

2

3

4

5

6

0 10 20 30 40

Q

r

(µC)

R

RR

R

g o n

g o n g o n

g o n

(

((

(

Ω)

Ω)Ω)

Ω)

I

RM

I

RM

0

20

40

60

80

0 20 40 60 80 100

I

R M

(A)

I

II

I

C

C C

C

(A)

(A)(A)

(A)

Q

r

Q

r

0

2

4

6

8

0 20 40 60 80 100

Q

r

(

μ

C)

I

II

I

C

C C

C

(A)

(A)(A)

(A)

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 11 Copyright Vincotech

Inverter Switching Characteristics

figure 13. FWD figure 14. FWD

Typical rate of fall of f orward and reverse recovery current as a f unction of collector current Typical rate of fall of f orward and reverse recovery current as a function of IGBT turn on gate resist or

diF/dt, dirr/dt = f(IC) diF/dt, dirr/dt = f(Rgon)

At VCE

=

300 V 25 °C At VCE

=

300 V 25 °C

VGE =±15 V 150 °C VGE = ±15 V 150 °C

Rgon =8 Ω IC=50 A

Tj:Tj:

0

3000

6000

9000

12000

0 10 20 30 40

d

i

/d

t

(A/

µ

s)

R

RR

R

g o n

g o n g on

g o n

(

((

(

Ω)

Ω)Ω)

Ω)

d

i

ii

i

F

FF

F

/

//

/

d

t

tt

t

d

i

ii

i

r r

r rr r

r r

/

//

/

d

t

tt

t

0

1000

2000

3000

4000

5000

0 20 40 60 80 100

d

i

/d

t

(A/µs)

I

II

I

C

C C

C

(A)

(A)(A)

(A)

d

i

ii

i

F

FF

F

/

//

/

d

t

tt

t

d

i

ii

i

r r

r rr r

r r

/

//

/

d

t

tt

t

figure 15. IGBT

Reverse bias safe operating area

I

C

= f(V

CE

)

At

T

j

= 150 °C

R

gon

= 8 Ω

R

goff

= 8 Ω

0

20

40

60

80

100

120

0 100 200 300 400 500 600 700

I

C

(A)

V

VV

V

C E

C E C E

C E

(V)

(V)(V)

(V)

I

II

I

C MAX

C MAXC MAX

C MAX

V

CE

MAX

I

c

cMODULE

MODULE

I

c

CHIP

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 12 Copyright Vincotech

Inverter Switching Definitions

T

j

125 °C

R

gon

8 Ω

R

goff

8 Ω

figure 1. IGBT figure 2. IGBT

Turn-off Switching Wavef orms & def inition of t

doff

, t

Eoff

(t

Eoff

= integrating time f or E

off

) Turn-on Switching W avef orms & definition of t

don

, t

Eon

(t

Eon

= integrating time f or E

on

)

V

GE

(0%) = -15 V V

GE

(0%) = -15 V

V

GE

(100%) = 15 V V

GE

(100%) = 15 V

V

C

(100%) = 300 V V

C

(100%) = 300 V

I

C

(100%) = 50 A I

C

(100%) = 50 A

t

doff

= 184 ns t

don

= 100 ns

figure 3. IGBT figure 4. IGBT

Turn-off Switching Wavef orms & def inition of t

f

Turn-on Switching Wavef orms & def inition of t

r

V

C

(100%) = 300 V V

C

(100%) = 300 V

I

C

(100%) = 50 A I

C

(100%) = 50 A

t

f

=131 ns t

r

=18 ns

=

General conditions

=

IC 1%

VCE 90%

VGE 90%

%

t

tt

t

(µs)

(µs)(µs)

(µs)

t

doff

t

Eoff

VCE

IC

VGE

IC 10%

VGE 10%

t

don

VCE 3%

%

t

tt

t

(µs)

(µs)(µs)

(µs)

I

C

V

CE

t

Eon

VGE

fitted

IC10%

IC 90%

IC 60%

IC 40%

%

t

tt

t

(µs)

(µs)(µs)

(µs)

VCE

IC

t

f

I

C 10%

IC 90%

%

t

tt

t

(µs)

(µs)(µs)

(µs)

t

r

VCE

IC

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 13 Copyright Vincotech

Inverter Switching Characteristics

figure 5. FWD figure 6. FWD

Turn-off Switching Wavef orms & definition of t

rr

Turn-on Switching Wavef orms & def inition of t

Qr

(t

Qr

= integrating time f or Q

r

)

V

F

(100%) = 300 V I

F

(100%) = 50 A

I

F

(100%) = 50 A Q

r

(100%) = 4,37 μC

I

RRM

(100%) = 62 A

t

rr

= 172 ns

I

RRM

10%

I

RRM

90%

I

RRM

100%

t

rr

%

t

tt

t

(µs)

(µs)(µs)

(µs)

I

F

V

F

fitted

t

Qr

%

t

tt

t

(µs)

(µs)(µs)

(µs)

I

F

Q

r

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 14 Copyright Vincotech

Date code UL & VIN Lot Serial

WW YY UL VIN LLLLL SSSS

Type&Ver Lot number Serial Date code

TTTTTTTVV LLLLL SSSS WWYY

Pin X Y Function

112,8 9,6 DC+

2 16 9,6 DC+

3 22,4 9,6 Therm1

4 25,6 9,6 Therm2

5 32 9,6 DC-2

6 32 6,4 S13

7 32 3,2 DC-1

8 32 0 S11

9 28,8 0 G11

10 6,4 0 Ph1

11 3,2 0 Ph1

12 0 0 G12

13 0 6,4 G14

14 0 16 Ph2

15 0 19,2 Ph2

16 0 25,6 G16

17 3,2 25,6 Ph3

18 6,4 25,6 Ph3

19 28,8 25,6 G15

20 32 25,6 S15

21 32 22,4 DC-3

22 32 16 G13

Ordering Code & Marking

Pin table

Outline

Text

Datamatrix

10-E1066PA050SA-L855F38Z-/3/

Version

with thermal paste 12 mm housing with press-fit pins

without thermal paste 12 mm housing with solder pins

NN-NNNNNNNNNNNNNN-TTTTTTVV

Name

with thermal paste 12 mm housing with solder pins

Ordering Code

10-EZ066PA050SA-L855F38T

10-EZ066PA050SA-L855F38T-/3/

10-E1066PA050SA-L855F38Z

without thermal paste 12 mm housing with press-fit pins

NN -NNNNNNNNNNNNNN

T T TTTTVV WWYY U L

V I N L LLL L SSS S

L855F38Z

L855F38T

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 15 Copyright Vincotech

Thermistor

ID

IGBT

FWD

Component

T11, T12, T13, T14,

T15, T16

D11, D12, D13, D14,

D15, D16 600 V

Rt

50 A

Pinout

Inverter Diode

Identification

Comment

Inverter Switch

50 A

600 V

Voltage Current Function

NTC

10-EZ066PA050SA-L855F38T

10-E1066PA050SA-L855F38Z

datasheet

05 Oct. 2018 / Revision 2 16 Copyright Vincotech

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Packaging instruction

Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample

Handling instruction

Handling instructions for

flow

E1 packages see vincotech.com website.

Package data

Package data for

flow

E1 packages see vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.: Date: Modification: Pages

10-Ex066PA050SA-L855F38x-D2-14 26 Oct. 2018 Added Z option to ordering options All