2SA2043-TL - ON Semiconductor L.L.C.

2SA2043

No.6914-1/4

Applications

•Relay drivers, lamp drivers, motor drivers, flash.

Features

•Adoption of FBET and MBIT processes.

•Large current capacitance.

•Low collector-to-emitter saturation voltage.

•High-speed switching.

•High allowable power dissipation.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --15 V

Collector-to-Emitter Voltage VCEO --15 V

Emitter-to-Base Voltage VEBO --5 V

Collector Current IC--10 A

Collector Current (Pulse) ICP --13 A

Base Current IB--1.2 A

Collector Dissipation PC1W

Tc=25°C15W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=--12V, IE=0A --0.1 µA

Emitter Cutoff Current IEBO VEB=--4V, IC=0A --0.1 µA

DC Current Gain hFE VCE=--2V, IC=--500mA 200 560

Gain-Bandwidth Product fTVCE=--2V, IC=--500mA 220 MHz

Output Capacitance Cob VCB=--10V, f=1MHz 90 pF

Continued on next page.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN6914A

11707 TI IM TC-00000430 / O0406EA MS IM TC-00000206

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before using any SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

SANYO Semiconductors

DATA SHEET

2SA2043 PNP Epitaxial Planar Silicon Transistor

DC / DC Converter Applications

2SA2043

No.6914-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=--3A, IB=--60mA --110 --170 mV

VCE(sat)2 IC=--4.5A, IB=--90mA --160 --240 mV

Base-to-Emitter Saturation Voltage VBE(sat) IC=--3A, IB=--60mA --0.85 --1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10µA, IE=0A --15 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, R BE=∞--15 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10µA, IC=0A --5 V

Turn-On Time ton See specified test circuit. 30 ns

Storage Time tstg See specified test circuit. 120 ns

Fall T ime tfSee specified test circuit. 14 ns

Package Dimensions Package Dimensions

unit : mm (typ) unit : mm (typ)

7518-003 7003-003

Switching Time Test Circuit

6.5

5.0 2.3 0.5

0.85

0.7 1.2

0.6 0.5

2.3 2.3

7.07.5

1.6

0.8 5.5 1.5

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

VRRB

VCC= --5VVBE=5V

50Ω

INPUT

OUTPUT

100µF470µF

PW=20µsIB1

D.C.≤1% IB2

IC= --20IB1=20IB2= --3A

6.5

5.0

2.3 0.5

0.85

0.6

0.5

1.2

2.3 2.3

7.0

2.5

5.5 1.5

0.8

0 to 0.2

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

2SA2043

No.6914-3/4

--7

--8

--9

--6

--5

--4

--3

--2

--1

00--0.1 --0.2 --0.3 --0.4 --0.5

IC -- VCE

--10mA

--20mA

--30mA

--40mA

--50mA

--60mA

--70mA

--80mA

--90mA

--100mA

IB=0mA

IT00170

Ta=75°C

25°C

--25°C

VCE= --2V

--8

--9

--7

--6

--5

--4

--3

--2

--1

00--0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2

IC -- VBE

IT00172

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- A

--1000

--100

--10

--0.01 --0.1

23 57 23 57 23 57

--1.0 --10

VCE(sat) -- IC

IT00176

Ta=75°C

--25°C

IC / IB=20

Ta=75°C

25°C

--25°C

1000

100

--0.01 325 --10--0.1

73257 3257

--1.0

hFE -- IC

VCE= --2V

IT00174

25°C

Collector Current, IC -- A

DC Current Gain, hFE

Collector Current, IC -- A

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

VBE(sat) -- IC

--10000

--1000

--100

--0.01 --0.1 --1.0 --10

Ta= --25°C

25°C

75°C

23 57 23 57 23 57

IC / IB=50

IT00180

--1000

--100

--10

--0.01 --0.1

23 57 23 57 23 57

--1.0 --10

VCE(sat) -- IC

IT00177

Ta=75°C

--25

°C

IC / IB=50

25°C

Collector Current, IC -- A

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

Collector Current, IC -- A

Base-to-Emitter

Saturation Voltage, VBE(sat) -- mV

fT -- IC

100

1.0

1000

--0.01 2573--0.1 2573--1.0 2573--10

IT00184

VCE= --2V

Cob -- VCB

1.0

100

1000

--1.0 23 57

--10 23

IT00182

f=1MHz

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

Collector Current, IC -- A

Gain-Brandwidth Product, fT -- MHz

2SA2043

No.6914-4/4PS

0.2

0.4

0.6

0.8

1.0

1.2

2006040 80 100 140120 160

PC -- Ta

IT03037

No heat sink

A S O

--1.0

--0.1

--0.01

--10

--0.1 --1.0

2537

--0.01 2537 --10

2537 23

ICP= --13A

IC= --10A

Tc=25°C

Single pulse

IT03036

500µs

100µs

DC operation (Ta=25°C)

DC operation (Tc=25°C)

2006040 80 100 140120 160

PC -- Tc

IT03038

100ms

10ms

1ms

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Ambient Temperature, Ta -- °C

Collector Dissipation, PC -- W

Case Temperature, Tc -- °C

Collector Dissipation, PC -- W

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