2-3
LC96585.1
IC AT
110oC
T O-251AA (D-PAK) T O-252AA (D-PAK)
600V
275ns UFS 600V
200ns UFS 600V
RUGGED UFS 600V
275ns UFS 600V
200ns UFS 600V
RUGGED UFS
3A HGTD3N60C3
2.0V 245µJ
HGTD3N60B3
2.0V 200µJ
HGTD3N60C3R
2.3V TBD µJHGTD3N60C3S
2.0V 245µJ
HGTD3N60B3S
2.0V 200µJ
HGTD3N60C3RS
2.3V TBD µJ
7A HGTD7N60C3
2.0V 600µJ
HGTD7N60B3
2.0V 350µJ
HGTD7N60C3R
2.3V TBD µJHGTD7N60C3S
2.0V 600µJ
HGTD7N60B3S
2.0V 350µJ
HGTD7N60C3RS
2.3V TBD µJ
IC AT
110oC
T O-262AA (D2-PAK) T O-263AB (D2-PAK) TO-220AB
600V
275ns UFS 600V
200ns UFS 600V
RUGGED UFS 600V
275ns UFS 600V
200ns UFS 600V
RUGGED UFS 600V
275ns UFS 600V
200ns UFS 600V
RUGGED UFS
3A HGT1S3N60C3D
2.0V 245µJ
HGT1S3N60B3D
2.0V 200µJ
HGT1S3N60C3DR
2.3V TBD µJHGT1S3N60C3DS
2.0V 245µJ
HGT1S3N60B3DS
2.0V 200µJ
HGT1S3N60C3DRS
2.3V TBD µJHGTP3N60C3D
2.0V 245µJ
HGTP3N60B3D
2.0V 200µJ
HGTP3N60C3DR
2.3V TBD µJ
7A HGT1S7N60C3D
2.0V 600µJ
HGT1S7N60B3D
2.0V 350µJ
HGT1S7N60C3DR
2.3V TBD µJHGT1S7N60C3DS
2.0V 600µJ
HGT1S7N60B3DS
2.0V 350µJ
HGT1S7N60C3DRS
2.3V TBD µJHGTP7N60C3
HGTP7N60C3D
2.0V 600µJ
HGTP7N60B3D
2.0V 350µJ
HGTP7N60C3DR
2.3V TBD µJ
12A HGT1S12N60C3
HGT1S12N60C3D
2.0V 900µJ
HGT1S12N60B3
HGT1S12N60B3D
2.0V 800µJ
HGT1S12N60C3R
HGT1S12N60C3DR
2.3V TBD µJ
HGT1S12N60C3S
HGT1S12N60C3DS
2.0V 900µJ
HGT1S12N60B3S
HGT1S12N60B3DS
2.0V 800µJ
HGT1S12N60C3RS
HGT1S12N60C3DRS
2.3V TBD µJ
HGTP12N60C3
HGTP12N60C3D
2.0V 900µJ
HGTP12N60B3
HGTP12N60B3D
2.0V 800µJ
HGTP12N60C3R
HGTP12N60C3DRS
2.3V TBD µJ
20A
HGT1S20N60C3
1.8V 1500µJHGT1S20N60B3
2.0V 1050µJHGT1S20N60C3R
2.3V 3000µJ
HGT1S20N60C3S
1.8V 1500µJHGT1S20N60B3S
2.0V 1050µJHGT1S20N60C3RS
2.3V 3000µJ
HGTP20N60C3
1.8V 1500µJHGTP20N60B3
2.0V 1050µJHGTP20N60C3R
2.3V 3000µJ
IC AT
110oC
TO-247 TO-264
600V
275ns UFS 600V
200ns UFS 600V
RUGGED UFS 600V
275ns UFS 600V
200ns UFS 600V
RUGGED UFS
12A HGTG12N60C3D
2.0V 900µJ
HGTG12N60B3D
2.0V 800µJ
HGTG12N60C3DR
2.3V TBD µJ
20A
HGTG20N60C3
HGTG20N60C3D
1.8V 1500µJ
HGTG20N60B3
HGTG20N60B3D
2.0V 1050µJ
HGTG20N60C3R
HGTG20N60C3DR
2.3V 3000µJ
30A HGTG30N60C3
HGTG30N60C3D
1.8V 2500µJ
HGTG30N60B3
HGTG30N60B3D
2.2V 1700µJ
HGTG27N60C3R
HGTG27N60C3DR
2.3V 2000µJ
40A
HGTG40N60C3
1.6V 3300µJHGTG40N60B3
2.0V 2500µJ
HGTG40N60C3R
2.3V TBD µJ
HGT1Y40N60C3D
1.6V 3300µJ
HGT1Y40N60B3D
2.0V 2500µJ
HGT1Y40N60C3DR
2.3V TBD µJ
A
A
A
M
CONTINUOUS CURRENT
Rating at TC = +110oC
POLARITY
N-Channel or P-Channel
1: First Generation
2: Second Generation
3: Third Generation
HGT -G-12 -N-60 -C-3-D
HARRIS IGBT
PACKAGE
D: 3 Lead TO-251/TO-252
1S: 3 Lead TO-262/TO-263
P: 3 Lead TO-220
G: 3 Lead TO-247
1Y: 3 Lead TO-264
V OL T A GE BREAKDO WN/10
i.e. (60, 120)
OPTIONS
L: Logic Level Gate
D: Integral Reverse Diode
S: Surface Mount
C: Current Sense
V: Voltage Clamping
R: Rugged IGBT
MAX FALL TIME AT
TJ = +150oC
A: 100ns E: ≤1µs
B: 200ns F: ≤2µs
C: 500ns G:≤5µs
D: 750ns
PART NOMENCLATURE
600V UFS Series IGBTs
VCE(SAT)
Maximum at T J = +25 oC
ICE = IC110, and VGE = 15V
EOFF
Typical at TJ = +150oC
ICE = IC110, and V CE(PK) = 480V
SEMICONDUCTOR
2-4
1200V 300ns UFS and Rugged UFS products to be offered in the future.
ITALICS = Future Product Offerings
IC AT
110oC
TO-251AA (D-PAK) TO-252AA (D-PAK) TO-262AA (D2-PAK) TO-263AB (D2-PAK) TO-220AB TO-247
TO-264
1200V
400ns UFS 1200V
400ns UFS 1200V
400ns UFS 1200V
400ns UFS 1200V
400ns UFS 1200V
400ns UFS 1200V
400ns UFS
3A
HGTD3N120C3
3.0V TBD µJ
HGTD3N120C3S
3.0V TBD µJ
HGT1S3N120C3D
3.0V TBD µJ
HGT1S3N120C3DS
3.0V TBD µJ
HGTP3N120C3D
3.0V TBD µJ
5A
HGTD5N120C3
3.0V TBD µJ
HGTD5N120C3S
3.0V TBD µJ
HGT1S5N120C3D
3.0V TBD µJ
HGT1S5N120C3DS
3.0V TBD µJ
HGTP5N120C3D
3.0V TBD µJ
10A
HGT1S10N120C3
HGT1S10N120C3D
3.0V 3200µJ
HGT1S10N120C3S
HGT1S10N120C3SD
3.0V 3200µJ
HGTP10N120C3
HGTP10N120C3D
3.0V 3200µJ
HGTG10N120C3D
3.0V 3200µJ
15A
HGT1S15N120C3
3.0V 4700µJ
HGT1S15N120C3S
3.0V 4700µJHGTP15N120C3
3.0V 4700µJ
HGTG15N120C3, HGTG15N120C3D
3.0V 4700µJ
20A
HGTG20N120C3, HGTG20N120C3D
3.0V 6300µJ
30A
HGTG30N120C3
3.0V 9400µJ
HGT1Y30N120C3D
3.0V 9400µJ
A
A
A
M
LC96585.1
1200V UFS Series IGBTs
VCE(SAT)
Maximum at TJ = +25oC
ICE = IC110, and VGE = 15V
EOFF
Typical at TJ = +150oC
ICE = IC110, and VCE(PK) = 960V
SEMICONDUCTOR