APTGU50TA60P - Advanced Power Technology

APTGU50TA60P

APTGU50TA60P – Rev 0 September, 2004

APT website

–

http:/

/

www.advancedpower.com 1 - 6

G5

G6

E6

E5

G3

VBUS 2 VBUS 3

G4

E4

WV

E3 0/VBUS 3

0/VBUS 2

G1

VBUS 1

U

E2

G2

0/VBUS 1 E1

Absolute maximum ratings

Symbol Parameter Max ratings Unit

VCES Collector - Emitter Breakdown Voltage 600 V

Tc = 25°C 73

IC Continuous Collector Current Tc = 80°C 50

ICM Pulsed Collector Current Tc = 25°C 200

A

VGE Gate – Emitter Voltage ±20 V

PD Maximum Power Dissipation Tc = 25°C 227 W

SSOA Switching Safe Operating Area Tj = 150°C 190A @ 600V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

VBUS1 VBUS2 VBUS3

W

E6

0/VB US3

V

G6

E5

0/VB US1

G2

E1

E2

0/VB US2

U

E3

E4

G4

G1 G3 G5

VCES = 600V

IC = 50A @ Tc = 80°C

Applicatio

n

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

• Power MOS 7® Punch Through (PT) IGBT

- Low conduction loss

- Ultra fast tail current shutoff

- Low gate c harge

- Switching frequency capability in the 200kHz

range

- Soft recovery parallel diodes

- Low diode VF

• Kelvin emitter for easy drive

• Very low stray inductance

- Symmetrical design

- Lead frames for power connections

• High level of integration

Benefits

• Outstandi ng perfor mance at hi gh freq uency

operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Very low (12mm) profile

• Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

• Module can be configured as a three phase bridge

• Module can be configured as a boost followed by a

full bridge

Triple phase leg

P

T IGBT Power Module

APTGU50TA60P

APTGU50TA60P – Rev 0 September, 2004

APT website

–

http:/

/

www.advancedpower.com 2 - 6

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA 600 V

Tj = 25°C 500

ICES Zero Gate Voltage Collector Current VGE = 0V

VCE = 600V Tj = 125°C 2500

µA

Tj = 25°C 2.2 2.7

VCE(on) Collector Emitter on Voltage VGE =15V

IC = 50A Tj = 125°C 2.1 V

VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1mA 3 6 V

IGES Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V ±100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Cies Input Capacitance 5700

Coes Output Capacitance 465

Cres Reverse Transfer Capacitance

VGE = 0V

VCE = 25V

f = 1MHz 30

pF

Qg Total gate Charge 165

Qge Gate – Emitter Charge 40

Qgc Gate – Collector Charge

VGE = 15V

VBus = 300V

IC = 50A 50

nC

Td(on) Tur n-on Delay Ti me 19

Tr Rise Time 36

Td(off) Turn-off Delay Time 83

Tf Fall Time 60

ns

Eon1 Turn-on Switching Energy 465

Eon2 Turn-on Switchi ng Energy X 837

Eoff Turn-off Switching Energy Y

Inductive Switching (25°C)

VGE = 15V

VBus = 400V

IC = 50A

RG = 5Ω

637

µJ

Td(on) Tur n-on Delay Ti me 19

Tr Rise Time 36

Td(off) Turn-off Delay Time 116

Tf Fall Time 86

ns

Eon1 Turn-on Switching Energy 465

Eon2 Turn-on Switchi ng Energy X 1261

Eoff Turn-off Switching Energy Y

Inductive Switching (125°C)

VGE = 15V

VBus = 400V

IC = 50A

RG = 5Ω

1058

µJ

X Eon2 includes diode reverse recovery

Y In accordance with JEDEC standard JESD24-1

APTGU50TA60P

APTGU50TA60P – Rev 0 September, 2004

APT website

–

http:/

/

www.advancedpower.com 3 - 6

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VRRM Maximum Peak Repetitive Reverse Voltage 600 V

Tj = 25°C 250

IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 750 µA

IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C 60 A

IF = 60A 2.2 2.7

IF = 120A 2.3 VF Diode Forward Voltage

IF = 60A Tj = 125°C 1.4

V

Tj = 25°C 55

trr Reverse Recovery Time

Tj = 125°C 151

ns

Tj = 25°C 121

Qrr Reverse Recovery Charge

IF = 60A

VR = 400V

di/dt=200A/µs

Tj = 125°C 999

nC

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT 0.55

RthJC Junction to Case Diode 0.9

°C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M6 3 5 N.m

Wt Package Weight 250 g

Package outline

5 places (3:1)

APTGU50TA60P

APTGU50TA60P – Rev 0 September, 2004

APT website

–

http:/

/

www.advancedpower.com 4 - 6

Typical Performance Curve

Outp ut char acteristics (VGE=15V)

TJ=-55°C

TJ=25°C

TJ=125°C

0

10

20

30

40

50

60

70

0 0.5 1 1.5 2 2.5 3

Ic, Collector current (A)

250µs Pulse Test

< 0.5% Duty cycle

VCE, Collector to Emitter Voltage (V)

Outp ut Characteristics (VGE=10V)

TJ=-55°C

TJ=25°C

TJ=125°C

0

10

20

30

40

50

60

70

0 0.5 1 1.5 2 2.5 3

Ic, Collector Current (A)

250µs Pulse Test

< 0.5% Duty cycle

VCE, Collector to Emitter Voltage (V)

Transfer Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

0

20

40

60

80

100

246810

VGE, Gate to Emitter Voltage (V)

Ic, Collector Current (A)

250µs Pulse Test

< 0.5% Duty cycle

Gate Charge

VCE = 120V

VCE = 300V

VCE = 480V

0

2

4

6

8

10

12

14

16

18

0 306090120150180

Gate Charg e (nC)

IC = 50A

TJ = 25°C

VGE, Gate to E mitter Voltag e (V)

Ic=100 A

Ic=50A

Ic=25A

0

0.5

1

1.5

2

2.5

3

3.5

6 8 10 12 14 16

VGE, Gate to Emitter Voltage (V)

TJ = 25°C

250µs Pulse Test

< 0.5% Duty cycle

On state Voltage vs Gate to Emitter Volt.

VCE, Collector to Emitter Voltage (V)

Ic=100 A

Ic=50A

Ic=25A

0

0.5

1

1.5

2

2.5

3

3.5

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature (°C)

250µs Pulse T est

< 0.5% Duty cycle

VGE = 15V

VCE, Collector to Emitter Voltage (V)

On state Voltage vs Junction Temperature

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-50 -25 0 25 50 75 100 125

TJ, Junction Temperature (°C)

Collector to Emitter Breakdown Voltage

(Normalized)

Breakdown Voltage vs Junction Temp.

0

20

40

60

80

100

-50 -25 0 25 50 75 100 125 150

TC, Case Temperature (°C)

Ic, DC Collector Current (A)

DC Collector Current vs Case Temperature

APTGU50TA60P

APTGU50TA60P – Rev 0 September, 2004

APT website

–

http:/

/

www.advancedpower.com 5 - 6

VGE

= 15V

VGE = 10V

0

10

20

30

40

20 30 40 50 60 70 80 90 100

ICE , Collector to Emitter Current (A)

td(on), Turn-On Delay Time (ns)

TJ = 25°C, TJ = 125°C

VCE = 400V

RG = 5Ω, L= 100µH

Turn-On Delay Time vs Collector Current

20

40

60

80

100

120

140

20 30 40 50 60 70 80 90 100

ICE, Collector to Emitter Current (A)

VCE = 400V

RG = 5Ω

L=100µH

VGE =10V, TJ=25°C

VGE =15V, TJ=25°C

VGE =10V, TJ=125°C

VGE =15V, TJ=125°C

td(off), Turn-Off Delay Time (ns)

Turn-Off Delay Time vs Collector Current

10

25

40

55

70

85

100

20 30 40 50 60 70 80 90 100

ICE, Collector to Emitter Current (A)

tr, Rise Time (ns)

VCE = 400V

RG = 5Ω

L=100µH

V

G

E =15V,

T

J

=125°C

V

G

E =10V,

T

J

=125°C

Current Rise Time vs Collector Current

TJ = 25°C

TJ = 125°C

20

40

60

80

100

120

20 30 40 50 60 70 80 90 100

ICE, Collector to Emitter Current (A)

tf, Fall Time (ns)

VCE = 400V, VGE = 15V, RG = 5Ω, L=100µH

Current Fall Time vs Collector Current

TJ=25°C,

VGE=15V

TJ=25°C,

VGE

=10V

TJ=125°C,

VGE=10V

0

0.5

1

1.5

2

2.5

3

3.5

4

20 30 40 50 60 70 80 90 100

ICE, Collector to Emitter Current (A)

VCE = 400V

RG = 5Ω, L=100µH

Eon2, Turn-On Energy Loss (mJ)

Turn-On Energy Loss vs Collector Current

TJ=125°C,

V

G

E=15

V

TJ = 25°C

TJ = 125°C

0

0.5

1

1.5

2

2.5

3

3.5

20 30 40 50 60 70 80 90 100

ICE , Collector to Emitter Current (A)

Eoff, Turn-off Energy Loss (mJ)

VCE = 400V

VGE = 15V

RG = 5Ω

L=100

µ

H

Turn-Off Energy Loss vs Collector Current

Eon2, 10 0A

Eoff, 100A

Eon2, 50A

Eoff, 50A

Eon2, 25A

Eoff, 25A

0

1

2

3

4

5

6

0 1020304050

Gate Resistance (Ohms)

Switching Energy Losses (mJ)

VCE = 400V

VGE

= 15V

T

J

= 125°C

Switching Energy Losses vs Gate Resistance

Eon2, 100A

Eoff, 100A

Eon2, 50A

Eoff, 50A

Eon2, 25A

Eoff, 25A

0

0.5

1

1.5

2

2.5

3

3.5

4

0 255075100125

TJ, Junction Temperature (°C)

Switching Energy Losses (mJ)

VCE = 400V

VGE

= 15V

RG = 5Ω

Switching Energy Losses vs Junction Temp.

APTGU50TA60P

APTGU50TA60P – Rev 0 September, 2004

APT website

–

http:/

/

www.advancedpower.com 6 - 6

Cies

Cres

Coes

10

100

1000

10000

0 1020304050

C, Capacitance (pF)

VCE, Collector to Emitter Voltage (V)

Capacitance vs Collector to Emitter Volta

g

e

0

40

80

120

160

200

0 200 400 600 800

IC, Collector Current (A)

Minimum Switching Safe Operating Area

VCE, Collector to Emitter Voltage (V)

0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0

0.1

0.2

0.3

0.4

0.5

0.6

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

Hard

switching

ZCS

ZVS

0

50

100

150

200

250

10 20 30 40 50 60 70 80

IC, Collector Current (A)

VCE = 400V

D = 50%

RG

= 5Ω

TJ = 125°C

TC = 75°C

Operating Frequency vs Collector Current

Fmax, Operating Frequency (kHz)

APT res erves the right to c ha nge , wit ho ut not ice , the spe cificatio ns and info rma tio n conta ine d he rein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522