©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4031, Rev. A
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop (150 C TJ Operation)
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings(1):
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
45
V
Max. Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
30
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
570
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25 C, IAS = 1.1 A,
L = 60 mH
36
mJ
Repetitive Avalanche Current
IAR
IAS decay linearly to 0 in 1 s
limited by TJ max VA=1.5VR
6.0
A
Max. Junction Temperature
TJ
-
-65 to +150
C
Max. Storage Temperature
Tstg
-
-65 to +150
C
Electrical Characteristics(1):
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 30A, Pulse, TJ = 25 C
0.56
V
VF2
@ 30A, Pulse, TJ = 125 C
0.51
V
Max. Reverse Current
IR1
@VR = 45V, Pulse,
TJ = 25 C
3.0
mA
IR2
@VR = 45V, Pulse,
TJ = 125 C
140
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
1600
pF
(1) in SHD package
SD175SA45A/B/C
©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4031, Rev. A Mechanical Dimensions: In Inches / mm
0.0 0.2 0.4 0.6 0.8
Forward Voltage Drop - V F (V)
10-1
100
101
102
Instantaneous Forward Current - I F (A)
Typical Forward Characteristics
125 °C
150 °C
25 °C 010 20 30 40 50
Reverse Voltage - V R (V)
10-3
10-2
10-1
100
101
102
Instantaneous Reverse Current - I R (mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
125 °C
150 °C
010 20 30 40 50
Reverse Voltage - V R (V)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
Junction Capacitance - C T (pF)
Typical Junction Capacitance
SD175SA45A/B/C
A
B
D
H
h
0.175 0.003
(4.45 0.077)
0.163 0.003
(4.14 0.077)
.120 0.003
0.0105 0.001, for Al top
0.0155 0.001, for Ag top
.011 0.0008
Bottom side metalization Ag - 30 kÅ minimum.
Top side metalization
A = Al - 25 kÅ minimum
B = Ag -30 kÅ minimum
C= Au plated Ni-Moly disc with bare edge
Bottom side is cathode, top side is anode.
D
h
H
B
A
©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4031, Rev. A
SD175SA45A/B/C
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