APTGT75TA120P - Advanced Power Technology

APTGT75TA120P

APTGT75TA120P – Rev 0 September, 2004

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Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

VBUS1 VBUS2 VBUS3

W

E6

0/VB US3

V

G6

E5

0/VB US1

G2

E1

E2

0/VB US2

U

E3

E4

G4

G1 G3 G5

G5

G6

E6

E5

G3

VBUS 2 VBUS 3

G4

E4

WV

E3 0/VBUS 3

0/VBUS 2

G1

VBUS 1

U

E2

G2

0/VBUS 1 E1

S

ymbol Parameter Ma

x

ratings Unit

VCES Collector - Emitter Breakdown Voltage 1200 V

TC = 25°C 100

IC Continuous Collector Current TC = 80°C 75

ICM Pulsed Collector Current TC = 25°C 175

A

VGE Gate – Emitter Voltage ±20 V

PD Maximum Power Dissipation TC = 25°C 350 W

RBSOA Reverse Bias Operating Area Tj = 125°C 150A@1150V

VCES = 1200V

IC = 75A @ Tc = 80°C

Applicatio

n

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

• Trench + Field Stop IGBT® Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- Avalanche energy rated

- RBSOA and SCSOA rated

• Kelvin emitter for easy drive

• Very low stray inductance

- Symmetrical design

- Lead frames for power connections

• High level of integration

Benefits

• Stable temperature behavior

• Very rugged

• Solderable terminals for easy PCB mounting

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Easy paralleling due to positive TC of VCEsat

• Very low (12mm) profile

• Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

• Module can be configured as a three phase bridge

• Module can be configured as a boost followed by a

full bridge

Triple phase leg

Trench IGBT® Power Module

APTGT75TA120P

APTGT75TA120P – Rev 0 September, 2004

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 5mA 1200 V

ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 5 mA

Tj = 25°C 1.4 1.7 2.1

VCE(on) Collector Emitter on Voltage VGE =15V

IC = 75A Tj = 125°C 2.0 V

VGE(th) Gate Threshold Voltage VGE = VCE , IC = 3 mA 5.0 6.5 V

IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 500 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Cies Input Capacitance 5340

Coes Output Capacitance 280

Cres Reverse Transfer Capacitance

VGE = 0V

VCE = 25V

f = 1MHz 240

pF

Td(on) Turn-on Delay Time 260

Tr Rise Time 30

Td(off) Turn-off Delay Time 420

Tf Fall Time

Inductive Switching (25°C)

VGE = ±15V

VBus = 600V

IC = 75A

RG = 4.7Ω 70

ns

Td(on) Turn-on Delay Time 285

Tr Rise Time 50

Td(off) Turn-off Delay Time 520

Tf Fall Time 90

ns

Eon Turn-o n Switchi ng Energy X 7

Eoff Turn-off Switching Energy Y

Inductive Switching (125°C)

VGE = ±15V

VBus = 600V

IC = 75A

RG = 4.7Ω

8.1 mJ

X Eon includes diode reverse recovery

Y In accordance with JEDEC standard JESD24-1

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VRRM Maximum Peak Repetitive Reverse Voltage 1200 V

Tj = 25°C 250

IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA

Tj = 25°C 1.6 2.1

VF Diode Forward Voltage IF = 75A

VGE = 0V Tj = 125°C 1.6 V

Tj = 25°C 3

Er Reverse Recovery Energy

IF = 75A

VR = 600V

di/dt =825A/µs Tj = 125°C 6 mJ

Tj = 25°C 7.6

Qrr Reverse Recovery Charge

IF = 75A

VR = 600V

di/dt =825A/µs Tj = 125°C 13.7 µC

APTGT75TA120P

APTGT75TA120P – Rev 0 September, 2004

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT 0.35

RthJC Junction to Case Diode 0.58

°C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M6 3 5 N.m

Wt Package Weight 250 g

Package outline

5 places (3:1)

APTGT75TA120P

APTGT75TA120P – Rev 0 September, 2004

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Typical Performance Curve

Output Characteristics (VGE=15V)

TJ=25°C

TJ=125°C

0

25

50

75

100

125

150

01234

VCE (V)

IC (A)

Output Characteristics

VGE=15V

VGE=13V

VGE=17V

VGE=9V

0

25

50

75

100

125

150

01234

VCE (V)

IC (A)

TJ = 125°C

Transfert Characteristics

TJ=25°C

TJ=125°C

0

25

50

75

100

125

150

56789101112

VGE (V)

IC (A)

Energy losses vs Collector Current

Eon

Eoff

Er

0

2.5

5

7.5

10

12.5

15

17.5

0 25 50 75 100 125 150

IC (A)

E (mJ)

VCE = 600V

VGE = 15V

RG = 4.7Ω

TJ

= 125°C

Eon

Eoff

Er

0

2

4

6

8

10

12

14

16

0 4 8 12 16 20 24 28 32

Gate Resistance (ohms)

E (mJ)

VCE = 600V

VGE =15V

IC = 75A

TJ = 125°C

Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area

0

25

50

75

100

125

150

175

0 400 800 1200 1600

VCE (V)

IC (A)

VGE=15V

TJ=125°C

RG=4.7Ω

maximum Effective Transient Thermal Impedance, Junction to Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

IGBT

APTGT75TA120P

APTGT75TA120P – Rev 0 September, 2004

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Forward Characteristic of diode

TJ=25°C

TJ=125°C

0

25

50

75

100

125

150

0 0.4 0.8 1.2 1.6 2 2.4

VF (V)

IC (A)

Hard

switching

ZCS

ZVS

0

10

20

30

40

50

60

0 20406080100120

IC (A)

Fmax, Operating Frequency (kHz)

VCE=600V

D=50%

RG=4.7Ω

TJ=125°C

Tc=75°C

Operating Frequency vs Collector Curren

t

maximum Effective Transient Thermal Impedance, Junction to Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0

0.1

0.2

0.3

0.4

0.5

0.6

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Diode

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APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522