Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SA940 TRANSISTOR (PNP) TO-220 1. BASE FEATURES Power dissipation PCM : 1.5 2. COLLECTOR W (Tamb=25) 3. EMITTER Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -150 Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100A, IE=0 -150 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-120V, IE=0 -10 A Emitter cut-off current IEBO VEB=-5V, IC=0 -10 A DC current gain hFE(1) VCE=-10V, IC=-500mA VCE(sat) IC=-500mA, IB=-50mA Base-emitter voltage VBE VCE=-10V, IC=-500mA Transition frequency fT VCE=-10V, IC=-500mA 4 MHz Cob VCB=-10V, IE=0, f=1MHz 55 pF Collector-emitter saturation voltage Collector output capacitance 40 140 -0.65 -1.5 V -0.85 V