2SA940 - Transys Electronics

TO-220 Plastic-Encapsulated Transistors

2SA940 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 1.5 W (Tamb=25℃)

Collector current

ICM : -1.5 A

Collector-base voltage

V(BR)CBO : -150 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELE CTRICAL CHARA CTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base br eakdown vol tage V(BR)CBO Ic=-100µA, IE=0 -150 V

Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -150 V

E mitter-b ase break dow n volt age V(BR)EBO IE=-100µA, IC=0 -5 V

Collector cut-off current ICBO VCB=-120V, IE=0

-10 µA

E mitte r cut-off current IEBO VEB=-5V, IC=0

-10 µA

DC current gain hFE(1) VCE=-10V, IC=-500mA 40 140

Collector-emitter saturation vol tage VCE(sat) IC=-500mA, I B=-50mA

-1.5 V

Base-emitter volt age VBE VCE=-10V, IC=-500mA -0.65 -0.85 V

Transit ion frequency fT V

CE=-10V, IC=-500mA 4 MHz

Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 55 pF

1 2 3

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Transys

Electronics

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