1
技术信息/TechnicalInformation
F4-50R12KS4_B11
IGBT-模块
IGBT-modules
preparedby:NK
approvedby:RS
dateofpublication:2013-11-11
revision:2.0 ULapproved(E83335)
EconoPACK™2模块采用第二高速IGBT和碳化硅二极管针对高频应用带有pressfit压接管脚和温度检测NTC
EconoPACK™2modulewiththefastIGBT2forhigh-frequencyswitchingandPressFIT/NTC
初步数据/PreliminaryData
VCES = 1200V
IC nom = 50A / ICRM = 100A
典型应用 TypicalApplications
• •感应加热和电焊机 InductiveHeatingandWelding
• •UPS系统 UPSSystems
电气特性 ElectricalFeatures
• •高短路能力，自限制短路电流 High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• •低开关损耗 LowSwitchingLosses
机械特性 MechanicalFeatures
• •绝缘的基板 IsolatedBasePlate
• •铜基板 CopperBasePlate
• •PressFIT压接技术 PressFITContactTechnology
• •符合RoHS RoHScompliant
• •标封装 StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode Digit
ModuleSerialNumber 1-5
ModuleMaterialNumber 6-11
ProductionOrderNumber 12-19
Datecode(ProductionYear) 20-21
Datecode(ProductionWeek) 22-23
2
技术信息/TechnicalInformation
F4-50R12KS4_B11
IGBT-模块
IGBT-modules
preparedby:NK
approvedby:RS
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 1200 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 70°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC50
70 A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 100 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 150°C Ptot 355 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V VCE sat
3,20
3,85
3,75
V
V
Tvj = 25°C
Tvj = 125°C
栅极阈值电压
Gatethresholdvoltage IC = 2,00 mA, VCE = VGE, Tvj = 25°C VGEth 4,5 5,5 6,5 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG0,60 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 5,0 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 3,40 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,21 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 50 A, VCE = 600 V
VGE = ±15 V
RGon = 13 Ω
td on
0,12
0,13
µs
µs
Tvj = 25°C
Tvj = 125°C
上升时间(电感负载)
Risetime,inductiveload IC = 50 A, VCE = 600 V
VGE = ±15 V
RGon = 13 Ω
tr
0,05
0,06
µs
µs
Tvj = 25°C
Tvj = 125°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 50 A, VCE = 600 V
VGE = ±15 V
RGoff = 13 Ω
td off
0,31
0,36
µs
µs
Tvj = 25°C
Tvj = 125°C
下降时间(电感负载)
Falltime,inductiveload IC = 50 A, VCE = 600 V
VGE = ±15 V
RGoff = 13 Ω
tf
0,02
0,03
µs
µs
Tvj = 25°C
Tvj = 125°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 50 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, di/dt = 1400 A/µs
RGon = 13 ΩEon
3,30
6,00
mJ
mJ
Tvj = 25°C
Tvj = 125°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 50 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, du/dt = 7000 V/µs
RGoff = 13 ΩEoff
1,70
2,50
mJ
mJ
Tvj = 25°C
Tvj = 125°C
短路数据
SCdata VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt ISC
300
A
Tvj = 125°C
tP ≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,35 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,12 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 125 °C
3
技术信息/TechnicalInformation
F4-50R12KS4_B11
IGBT-模块
IGBT-modules
preparedby:NK
approvedby:RS
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V
连续正向直流电流
ContinuousDCforwardcurrent IF50 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 100 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 1250 A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V VF
2,00
1,70
2,55
V
V
Tvj = 25°C
Tvj = 125°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 50 A, - diF/dt = 1400 A/µs (Tvj=125°C)
VR = 600 V
VGE = -15 V
IRM
28,0
41,0
A
A
Tvj = 25°C
Tvj = 125°C
恢复电荷
Recoveredcharge IF = 50 A, - diF/dt = 1400 A/µs (Tvj=125°C)
VR = 600 V
VGE = -15 V
Qr
3,00
8,50
µC
µC
Tvj = 25°C
Tvj = 125°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 50 A, - diF/dt = 1400 A/µs (Tvj=125°C)
VR = 600 V
VGE = -15 V
Erec
1,10
3,10
mJ
mJ
Tvj = 25°C
Tvj = 125°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,70 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,24 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 125 °C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues min. typ. max.
额定电阻值
Ratedresistance TC = 25°C R25 5,00 kΩ
R100偏差
DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %
耗散功率
Powerdissipation TC = 25°C P25 20,0 mW
B-值
B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-值
B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K
B-值
B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
4
技术信息/TechnicalInformation
F4-50R12KS4_B11
IGBT-模块
IGBT-modules
preparedby:NK
approvedby:RS
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
模块基板材料
Materialofmodulebaseplate Cu
内部绝缘
Internalisolation 基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140) Al203
爬电距离
Creepagedistance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 10,0
mm
电气间隙
Clearance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 7,5
mm
相对电痕指数
Comperativetrackingindex CTI > 200
min. typ. max.
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,02 K/W
杂散电感,模块
Strayinductancemodule LsCE 30 nH
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch RCC'+EE' 2,20 mΩ
储存温度
Storagetemperature Tstg -40 125 °C
模块安装的安装扭距
Mountingtorqueformodulmounting 螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm
重量
Weight G180 g
5
技术信息/TechnicalInformation
F4-50R12KS4_B11
IGBT-模块
IGBT-modules
preparedby:NK
approvedby:RS
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
0
10
20
30
40
50
60
70
80
90
100
Tvj = 25°C
Tvj = 125°C
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
0
10
20
30
40
50
60
70
80
90
100
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11 12
0
10
20
30
40
50
60
70
80
90
100
Tvj = 25°C
Tvj = 125°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=13Ω,RGoff=13Ω,VCE=600V
IC [A]
E [mJ]
0 10 20 30 40 50 60 70 80 90 100
0
2
4
6
8
10
12
14
16
18
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
6
技术信息/TechnicalInformation
F4-50R12KS4_B11
IGBT-模块
IGBT-modules
preparedby:NK
approvedby:RS
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=50A,VCE=600V
RG [Ω]
E [mJ]
0 10 20 30 40 50 60 70 80 90 100 110 120 130
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/W]
0,001 0,01 0,1 1 10
0,01
0,1
1
ZthJC : IGBT
i:
ri[K/W]:
τi[s]:
1
0,021
0,01
2
0,1155
0,02
3
0,112
0,05
4
0,1015
0,1
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=13Ω,Tvj=125°C
VCE [V]
IC [A]
0 200 400 600 800 1000 1200 1400
0
20
40
60
80
100
120
IC, Modul
IC, Chip
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6
0
10
20
30
40
50
60
70
80
90
100
Tvj = 25°C
Tvj = 125°C
7
技术信息/TechnicalInformation
F4-50R12KS4_B11
IGBT-模块
IGBT-modules
preparedby:NK
approvedby:RS
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=13Ω,VCE=600V
IF [A]
E [mJ]
0 10 20 30 40 50 60 70 80 90 100
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
Erec, Tvj = 125°C
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=50A,VCE=600V
RG [Ω]
E [mJ]
0 10 20 30 40 50 60 70 80 90 100 110 120 130
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
Erec, Tvj = 125°C
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
t [s]
ZthJC [K/W]
0,001 0,01 0,1 1 10
0,01
0,1
1
ZthJC : Diode
i:
ri[K/W]:
τi[s]:
1
0,042
0,01
2
0,231
0,02
3
0,224
0,05
4
0,203
0,1
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
TC [°C]
R[Ω]
0 20 40 60 80 100 120 140 160
100
1000
10000
100000
Rtyp
8
技术信息/TechnicalInformation
F4-50R12KS4_B11
IGBT-模块
IGBT-modules
preparedby:NK
approvedby:RS
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
I n f i n e o n
9
技术信息/TechnicalInformation
F4-50R12KS4_B11
IGBT-模块
IGBT-modules
preparedby:NK
approvedby:RS
dateofpublication:2013-11-11
revision:2.0
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。
请注意，对这类应用我们强烈建议
-执行联合的风险和质量评估
-得到质量协议的结论
-建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货
如果有必要，请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.