CHZ015A-QEG 15W L-Band Driver GaN HEMT on Sic in SMD leadless package Description The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015A-QEG is proposed on a 0.5m gate length GaN HEMT process. It is based on Quasi MMIC technology. It is supplied in RoHS compliant SMD package. VDS = 45V, ID_Q = 100mA, Pin = 28dBm Pulsed mode (25s-10%) Main Features Wide band capability: 1.2 - 1.4GHz Pulsed operating mode High power: > 15W High PAE: up to 55% DC bias: VDS=45V @ I D_Q=100mA Low cost package: 24L-QFN4x5 MTTF > 106 hours @ Tj=200C Performances on the connector access planes Main Electrical Characteristics Tamb.= +25C, pulsed mode Symbol Parameter Freq Frequency range GSS Small Signal Gain POUT Output Power Max Power Added Efficiency PAE Saturated Drain Current IdSAT Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 Min 1.2 18 39.5 45 1/14 Typ 19.5 41.5 55 650 Max 1.4 43 Unit GHz dB dBm % mA Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Recommended DC Operating Ratings Tamb.= +25C Symbol Parameter VDS Drain to Source Voltage VGS_Q Gate to Source Voltage ID_Q Quiescent Drain Current ID_MAX Drain Current IG_MAX PW DC Tj_MAX Gate Current (forward mode) Pulse width Duty cycle Junction temperature (1) Min 20 Typ 45 -1.9 100 Max 50 650 (1) mA 0 8 1.5 mA ms % C 350 10 200 Unit V V mA Conditions VDS=45V, ID_Q=100mA VDS=45V VDS=45V, Compressed mode Compressed mode Limited by dissipated power. DC Characteristics Tamb.= +25C Symbol Parameter VP Pinch-Off Voltage (2) ID_SAT Saturated Drain Current Gate Leakage Current IG_leak (reverse mode) Drain-Source VBDS Break-down Voltage RTH Thermal Resistance (1) (2) Min -3 Typ -2 2.7 Max -1 -1 200 Unit V A mA V 5.5 C/W Conditions VDS=45V, ID=IDSS/100 VDS=7V, VG=2V (1) VD=45V, VG=-7V (1) VG=-7V (1) 1ms - 10% Parameters extrapolated from unit cell measurement. For information, limited by ID_MAX , see on Absolute Maximum Ratings. Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 2/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver RF Characteristics (1) Tamb.= +25C, pulsed mode (2), on board 61501358(1), VDS=45V, ID_Q=100mA Symbol Parameter Min Typ Freq Frequency range 1.2 GSS Small Signal Gain 18 19.5 dGSS Small Signal Gain flatness +/-0.3 PSAT Saturated Output Power 39.5 41.5 Power Added Efficiency PAE 45 55 Saturated Drain Current IDSAT 650 Rlin Input Return Loss -12 Max 1.4 43 -10 Unit GHz dB dB dBm % mA dB (1) Measured on evaluation board 61501358 on the connector access planes. Input RF and gate voltage are pulsed. Conditions are 25s width, 10% duty cycle and 1s offset between RF and DC pulse. (2) Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 3/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Absolute Maximum Ratings Tamb.= +25C (1), (2), (3) Symbol Parameter VDS Drain-Source Voltage VGS_Q Gate-Source Voltage IG_MAX Maximum Gate Current in forward mode IG_MIN Maximum Gate Current in reverse mode ID_MAX Maximum Drain Current PIN Maximum Input Power PW_MAX Pulse width DC_MAX Duty cycle Top Operating temperature range Tj TSTG Junction Temperature Storage Temperature Rating -0.5, +60 -10, +2 25 -4 2 32 3 20 -40 to +85 Unit V V mA mA A dBm ms % C 220 -55 to +150 C C Note (4), (6) (4) (5) (1) Operation by this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. (3) The given values have not to be exceeded at the same time even momentarily for any parameter, since each parameter is independent from each other, otherwise deterioration or destruction of the device may take place. (4) Max junction temperature has to be considered. (5) Linked to and limited by IG_MAX & IG_MIN values. (6) VGS_Q max limited by ID_MAX and IG_MAX values. Simulated Source and Load Impedance VDS = 45V, ID_Q = 100mA Zload Zsource Frequency (GHz) Typical [1.2-1.4] Source 50 - j0 Load 54.0 + j29.6 These values are defined at the package interface with PCB. Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 4/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Typical Package Sij parameters (simulation) Tamb.= +25C, CW mode, VDS=45V, ID_Q=100mA Freq S11 PhS11 S12 PhS12 (GHz) (dB) () (dB) () 0.1 -0.04 -7.9 -60.47 103.6 0.2 -0.09 -16.0 -53.53 85.8 0.3 -0.18 -24.6 -49.33 73.7 0.4 -0.32 -34.3 -46.02 62.1 0.5 -0.55 -45.4 -43.13 49.7 0.6 -0.95 -58.6 -40.54 35.9 0.7 -1.65 -75.1 -38.09 20.3 0.8 -2.86 -95.8 -35.88 2.2 0.9 -4.89 -122.7 -34.01 -18.2 1.0 -7.93 -159.0 -32.58 -40.3 1.1 -11.14 150.1 -31.59 -63.0 1.2 -12.04 92.7 -30.92 -85.3 1.3 -11.73 49.2 -30.40 -107.3 1.4 -12.88 16.9 -29.97 -130.0 1.5 -18.12 -9.9 -29.71 -154.4 1.6 -27.14 129.5 -29.80 179.7 1.7 -12.71 113.3 -30.37 153.4 1.8 -8.17 93.3 -31.25 128.0 1.9 -6.07 77.4 -32.19 102.7 2.0 -5.06 66.4 -33.21 74.7 2.1 -4.28 60.6 -34.91 41.9 2.2 -3.14 55.2 -38.21 8.4 2.3 -2.20 47.6 -42.76 -17.7 2.4 -1.65 39.9 -47.60 -35.4 2.5 -1.32 33.3 -52.31 -47.3 2.6 -1.11 27.7 -56.83 -55.3 2.7 -0.96 22.7 -61.24 -60.4 2.8 -0.84 18.3 -65.64 -62.7 2.9 -0.75 14.4 -70.11 -61.8 3.0 -0.68 10.8 -74.72 -55.7 3.1 -0.62 7.5 -79.12 -40.7 3.2 -0.57 4.4 -82.10 -16.7 3.3 -0.53 1.5 -82.89 6.3 3.4 -0.49 -1.3 -82.61 20.6 3.5 -0.46 -3.9 -82.26 27.9 3.6 -0.43 -6.4 -82.13 31.5 3.7 -0.40 -8.8 -82.20 32.9 3.8 -0.38 -11.1 -82.44 33.2 3.9 -0.36 -13.4 -82.81 32.8 4.0 -0.34 -15.5 -83.27 32.1 Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 5/14 S21 (dB) 9.48 10.39 11.07 11.89 12.84 13.87 14.98 16.04 16.90 17.43 17.60 17.53 17.37 17.17 16.86 16.22 15.15 13.80 12.41 10.98 8.87 5.20 0.29 -4.89 -9.91 -14.75 -19.45 -24.12 -28.86 -33.73 -38.37 -41.58 -42.59 -42.52 -42.38 -42.45 -42.71 -43.13 -43.67 -44.29 PhS21 () -166.5 175.2 162.7 150.8 138.1 123.9 108.0 89.6 68.8 46.3 23.4 0.7 -21.6 -44.7 -69.4 -95.7 -122.3 -148.0 -173.7 158.0 124.8 91.0 64.6 46.5 34.2 25.9 20.5 17.8 18.4 24.1 38.7 62.4 85.0 99.0 105.9 109.1 110.2 110.1 109.3 108.2 S22 (dB) -5.44 -5.98 -5.87 -5.54 -5.05 -4.56 -4.58 -4.22 -3.87 -3.63 -3.47 -3.31 -3.09 -2.86 -2.81 -3.09 -3.62 -3.94 -3.63 -2.80 -2.22 -2.78 -4.06 -5.11 -5.68 -5.87 -5.85 -5.72 -5.54 -5.34 -5.14 -4.94 -4.75 -4.56 -4.39 -4.22 -4.06 -3.92 -3.78 -3.65 PhS22 () -20.3 -24.1 -30.2 -37.3 -45.1 -55.3 -63.1 -69.9 -77.5 -85.0 -91.8 -97.8 -103.7 -110.1 -117.3 -124.1 -128.1 -128.7 -128.3 -131.5 -140.8 -151.7 -156.8 -156.4 -153.9 -151.4 -149.6 -148.5 -148.0 -148.0 -148.3 -148.9 -149.6 -150.5 -151.5 -152.5 -153.6 -154.8 -156.0 -157.2 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Typical Performance on Evaluation Board (ref 61501358) Calibration and measurements are done on the connector access planes of the evaluation boards. Tamb.= +25C, pulsed mode (1), VDS=45V, ID_Q=100mA Pout, PAE, Gain & Id @ 1.3GHz Pout, PAE & Gain @ Pin=28dBm (1) Input RF and gate voltage are pulsed. Conditions are 25s width, 10% duty cycle and 1s offset between DC and RF pulse. Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 6/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Typical Performance on Evaluation Board (ref 61501358) Calibration and measurements are done on the connector access planes of the evaluation boards. Tamb.= +25C, pulsed mode (1), VDS=45V, ID_Q=100mA S parameters versus frequency (1) Input RF and gate voltage are pulsed. Conditions are 25s width, 10% duty cycle and 1s offset between DC and RF pulse. Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 7/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Typical Performance in Temperature (on evaluation board) Calibration and measurements are done on the connector access planes of the evaluation boards (ref 61501358). Tamb.= -40C, +25C, +85C, pulsed mode (1), VDS=45V, Vgs fixed (ID_Q=100mA @ +25C) Pout, PAE, Gain & Id @ 1.3GHz & -40C Pout, PAE, Gain & Id @ 1.3GHz & +85C (1) Input RF and gate voltage are pulsed. Conditions are 25s width, 10% duty cycle and 1s offset between DC and RF pulse. Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 8/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Typical Performance in Temperature (on evaluation board) Calibration and measurements are done on the connector access planes of the evaluation boards (ref 61501358). Tamb.= -40C, +25C, +85C, pulsed mode (1), VDS=45V, ID_Q=100mA (fixed @ +25C) Linear Gain versus temperature with ID_Q fixed @ +25C (100mA) Input Return Loss versus temperature with ID_Q fixed @ +25C (100mA) (1) Input RF and gate voltage are pulsed. Conditions are 25s width, 10% duty cycle and 1s offset between DC and RF pulse. Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 9/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Demonstration Amplifier Low Frequency Equivalent Schematic (ref 61501358) Demonstration Amplifier (ref 61501358) / Bill of Materials Designator L1 L2 C1 C2 C3 C4 C5 C6 R1 R2 J1 J2 J3 Q1 - Type Inductor for output pre-matching Inductor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Jumper Resistor Connector Connector Connector Driver PCB Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 Value - Description Qty 3.6nH, +/- 5%, 0603 1 22nH, +/- 5.2%, 0908 10pF, +/- 5%, 0603 120pF, +/- 5%, 0805 220pF, +/- 5%, 0805 1nF, +/- 5%, 0805 1F, +/- 10%, 1210 68F, +/- 20%, H13 Jumper 0 , 0603 3, +/- 1%, 0603 SMD 3 contacts SMD 5 contacts SMA CHZ015A-QEG RO4003, Er=3.55, h=508m 1 2 1 1 2 1 1 1 1 1 1 2 1 - 10/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Amplifier Demonstration Board (ref 61501358) IN Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 OUT 11/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Amplifier Demonstration Board (ref 61501358) Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 12/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Package outline (1) Tcase Matt tin, Lead Free (Green) Units : mm From the standard : JEDEC MO-220 (VGHD) 25- GND 12345678- (3) (C) Nc DC Nc Nc GND (2) GND (2) Nc Nc 910111213141516- OUT Nc OUT Nc Nc GND (2) Nc Nc 1718192021222324- Nc GND (2) Nc Nc GND (2) IN GND (2) Nc (1) The package outline drawing included in this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked "Gnd" through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. (3) The temperature is monitored at the package back-side interface (Tcase) as shown above. Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 13/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHZ015A-QEG 15W L-Band Driver Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N2011/65 and REACh N1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 4x5 package: CHZ015A-QEG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 14/14 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Quebec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34