Quy. 34k Rat SE OR EMH ne ete bee RL aOR Bee mE ba ee ew ed BCS56 to 558 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in plastic TO-92 envelopes, es of audio amplifiers. QUICK REFERENCE DATA pecially suitable for use in driver stages BC556 | BCS57 | BC558 Collector-emitter voltage (+ Vag = 0 V) max. 50 30 V Collector-emitter voltage (open base) max. 45 30 =OV D.C. current gain | - > 75 75 Tic = 2mA;VcE=5V < 00 | 800 Collector current (peak value) max, 200 mA Total power dissipation UP to Tamb = 25 OC max, 500 mW Junction temperature max. 150 o Transition frequency at f = 35 MHz l=10mA;-Vcee =5 V typ. 200 MHz Noise figure at Rg =2kQ le = 200 pA; Vcp=5V f= 1kHz;B = 200 Hz typ. 2 dB MECHANICAL DATA Dimensions in mm Fig. 1 TO-92 variant. 3 TL J T 0,40 ? eS afer diameter within 2,5 max is uncontrolled ~ 5,2max + 12, 7min 4 0,49 max 4 _4 72790994.2~ N - RATINGS reiting values to aceordars rh 80556 | BLDS7 | dULso Collactor base voltage {coer arnitter! ~Vero Tax 80 | 50 ! 3G OV Collector-emitter voltage (Vas = 0} -Voes Tax 60 | 30 | SOV Collector-emitter voltage (oper dase) -VCEO max 89 ! 4 | Sc OV Emitter-Oase voltage (onen collector} -VER0 Man, 5 | 5 | SV Collector current (d.c.} l max 100 nA Coiector current (peak value} low mex, 200 ma Emitter current (peak value) lea Max. 200 mA Base current (peak value) Igqq max, 200 mA Total power dissipation UD tO Tamp = 25 OC Prot max, 500 mV Stcrage temperature T stg 65 to + 150 9 Junction temperature Tj max. 150 eC THERMAL RESISTANCE From junction to ambient in free air Reh j-a = 290 c/w From junction to case Rth j-c = 150 K/W CHARACTERISTICS Tj = 25 9C unless otherwise specified. Collector cut-off current - typ. 1 nA le =0;-Vceg=30V;T)= 25C lego Z 15 nA Tj = 150 C IcRo < 4 uA cam} * selon DMA Voce =5V VRE "YP. 00 t osc mv <o 750 mv Ic=19mA;-Vcee=5V VpE < 820 mv Saturation voltages ** ~Ic= 10 mA; Ig =0,5mA ~VcEsat oe 500 me VBEsat typ. 750 mv ~I = 100 mA; -Ig=5mA -VeEsat seo ~VBEsat typ. 930 mV * Vee decreases by about 2 mV/K with increasing temperature. ** Vpecat decreases dy about 1,7 mV/K with increasing temperature,Se Pa ta . ai. Silicon planar epitaxial transistors BC556 to 558 Collector capacitance at f = 1 MHz le =lp=0;-Vce=10V Ce typ. 4 pF Transition frequency at f = 35 MHz lce=10mA;-Vce=5V ty typ. 200 MHz Small-signal current gain at f = 1 kHz lce=2mA;-Vcgp =5V Nfe 75 to 900 Noise figure at Rg = 2 kQQ. l = 200 uA; -VcE=5V typ. 2 dB f= 1 kHz: B = 200 Hz F - 0 8 BC556A BCSS6B | BC557 | BC557A | BC557B | BCS57C BC558 | BCS58A | BC558B ; BC558C D.C, current gain > 75 195 220 | 420 le =2mA;-VcE=5V MFE 00 | 250 | 475 | 800BC556 to 558 = oO ao Zo on a 0 5 102 lp (nA) 10 107! 7285709 [TT scssre Coe Hl eet ist \ ! } | 4 | Me Vaaes Ay = | ZE | | oo 750 _ Vee (mv) 1000 Fig. 2 Voce =5 V; 1] = 25C. 7Z85706 BC5564 BC557A BC558A BCS56B BCS57B8 BC5588 BC557C BC558C 100 0 - 100 4 T (C) Fig. 4 Vcg =5 Vi Ico =10mMA. 7285704 BCSS6GA BCSS7TA BCS558A BC5568 BC5578 8C5588 acss7c BCS558C 100 0 100 200 T; (C) Fig.6 Veg =5 Vile =0,1 mA. 7285970? BCSO6A BCS5S7A BC558A 305568 8C5578 | 805588 | | gess7c BC558C _ 102 100 0 100 T (C) Fig. 3 -Vcp =5V; le = 50 mA. 10 7285705 (uA) BC556A BC557A BC558A BC5568 BC5578 BC5588 BC557C BC558C 1 - 100 a 100 T, (C) Fig. 5 Vcp=5 Vi lo=1 mA. 260 72857108 To . 1 NEE (MHz) Lass AS wo LHe NON 7 Trosees SOs (peg NN 100 mn ) 50 ~ Ig (mal 100 Fig. 7 Vcog=5V; 7; = 25 C; f= 35 MHz.Silicon planar epitaxial transistors ~ yf - a ~ cook - a BC556 to 558 500 poe ee 785700 i BC557C BC558C NreE | 8C5568 8C5578 250 8C5588 | '8C556A BC5574 BC55aa 0 1a72 107! 1 10 102 Fig. 8 Vee = 5 V; 7; = 25 9C, 200 7285702 VCEsat (mV) 100 BCS56A BC5568 | BC557A BC5578 BC557C BC558A BC558B BC558C 0 107! 1 10 102 ~Ic lelmA} Fig. 9 ~ = 20; T; = 25 0, 1000 r ) 7285701 i : | Vgesat : {mv} | Le aT 750 8C5568 8C557C |e 8C557B BCS58CN. er | cease BC558B ee |___acssga = | paeeneernrn nme] | ee eee H i Poy il 500 | | | | 107! 1 10 104 le (mA) | Fig. 10 ~f. 20; T) = 25 C.t 77285698 19-2 7285699 BC557C h BC558C re BCSS7C c558C BC5568 BC5578 BC558B 8C556B 8C5578 558B 1073 BC AC556A BCSS7A BC558A BC5S6A BCS5S7A 8C558A 1074 ig (mA) Ig (mA) Fig. 11. Fig. 12. For Figs 11, 12, 13 and 14 the following conditions apply: -Vce =9V;f=1 kHz; 1j = 25 9. 7285703 3 7285697 500 t 10 io] | ' BCS57C| h BC558C oe hte (pA/V) BCS5S7C / | acss6a| | | | BC558C 250 gcs57B || 8C5588 BC5568 BC557 8C5588 BC556A BCS57A | BC55BA | BCS56A BC5S7A BCS58A 1071 1 10 107! 1 ate) Ic (mA) aI (mA) Fig. 13. 7285710 Fig. 14. (pF) = Veg (VI Fig. 15 f= 1 MHz, Tj = 25 C.