9 LLE OD ff 4assus2 gooae7a 9 &j Data Sheet No. PD-9.414B INTERNATIONAL RECTIFIER T- 37 -tr INTERNATIONAL RECTIFIER | T42R HEXFET TRANSISTORS IRFZ30 0 IR-FZ32 N-Channel 50 VOLT POWER MOSFETs 50 Voit, 0.05 Ohm HEXFET Product Summary TO-220AB Plastic Package vi R I The HEXFET technology has expanded its product base to Part Number Os DS(on) 0 serve the low voltage, very low Rps(on) MOSFET transistor IRFZ30 50V 0.052 30A requirements. International Rectifiers highly efficient 0 0.07] 25A geometry and unique processing of the HEXFET have been IRFZ32 50V combined to create the lowest on resistance per device performance. In addition to this feature all HEXFETs have documented reliability and parts per million quality ! The HEXFET transistors also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. Features: Extremely Low RDS(on) Compact Plastic Package Fast Switching a a a They are well suited for applications such as switching power . Low Drive Current a a supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and in systems that are operated from low voltage batteries, such as automotive, portable equipment, etc. Ease of Paralleling Excellent Temperature Stability Parts Per Million Quality 4 2.87 (0 113} 2.62 (0 103) } 3 78 (0.1493 F540 199) OTA CASE STYLE AND DIMENSIONS ORAIN 1.320.052) (* 12210 048) 2 6 23 (0 245) TEAM 3 - SOURCE TERM 2 - DAAIN TERM 1 ~ GATE 10.54 (0.418) 457 (0 180) 43210 170) aygionto) TT 2 23 {0 090) 115 (0.45) MIN 15.09 (0.594) MAX. 13.97 (0.550) MAX. 051 (0.020) 047 (0 076) 1 2:89 10 104) 15 (0088) 764 (0 104} Case Style TO-220AB Dimensions in Millimeters and (Inches) C-427LIE D 4455452 0004 IRFZ30, IRFZ32 Devices i bet Oo i : - INTERNATICNAL RECTIFIER T-39-11 Absolute Maximum Ratings 55 to 150 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) q np ll & Vp up epee a | Vv Ipton) * Rostonmax.. Vas = 10V Rpsion) Vag = 10V, Ip = 164 > See Fig. See Fig, 17 (MOSFET switching times are essentially independent of operating temperatura} (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. charge is essentially independent of operating temperature.) contact screw on tab symbol showing the to center of die. internal device inductances. drain lead, 6mm (0.25 in.) from package to center of ie, source lead, 6mm (0.25 In.) from package to source bonding pad. Thermal Resistance Rinuc _ Junction-to-Case ALL - - 1.67. | KWG@ Rihcs _Case-to-Sink ALL - 1.0 = KW@| Mounting surface fiat, smooth, and greased. Rinya __Junction-to-Ambient ALL - - 0 KAW@| Typical socket mount C-4281LE D i 44SS4S2 gogsLag 7? INTERNATIONAL RECTIFIER Source-Drain Diode Ratings and Characteristics {Body Diode) (Body Diode) Time Ty = 25C to 160C. @ KW = CW WIK = WiC 80 ps PULSE Ww tp. QRAIN CURRENT (AMPERES) av 0 10 20 30 40 50 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS), . Fig. 1 Typical Output Characteristics us PULSE TEST Ip, GRAIN CURRENT (AMPERES) 0 04 08 1.2 1.6 2.0 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics turn-on Pulse Test: Pulse width < 300ys, Duty Cycle < 2%. C-429 p, ORAIN CURRENT (AMPERES) 1p, DRAIN CURRENT (AMPERES) IRFZ30, IRFZ32 Devices T-39-11 teverse P-N junction rectifier @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Therma! Impedance Curve (Fig. 5}. 70 60 50 40 30 20 200 100 50 5 T T 80 us PULSE TEST | Vos > lp(an} X Roston) MAX. } Ty = -559C J we Ty = Q Y Ty = 125C / 2 4 6 8 10 12 14 Vag, GATE-TO SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics IN IS LIMITED BY Ras(on)- 10 IRFZ32 7 Te = 259C Ty = 180C MAX. Rinse = 1.67 KAW LE PU 4.0 2 5 10 20 50 100 200 Vos. ORAIN-TO SOURCE VOLTAGE {VOLTS} Fig. 4 Maximum Safe Operating AreaIRFZ30, IRFZ32 Devices CE (PER UNIT} G NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDAN yg TRANSCONDUCTANCE (SIEMENS) BVpss. DRAIN-TO-SOURCE BREAKOOWN VOLTAGE (NORMALIZED) 0; . SCLDL 0. Znyclt Rinse. So 8 1LE D i 4&SS4uS2 0004641 9 i INTERNATIONAL RECTIFIER T-39-11 [et] >| 1 0.08 SINGLE 1. DUTY FACTOA, 0 = i THERMAL IMPEDANCE) 2. PER UNIT BASE = Rinje = 1.67 DEG. CAW. 3. Tym - Te = Pp Ztnaclv. 19-5 2 5 19-4 2 5 10-3 2 10-2 2 5 10-1 2 5 1.0 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 80 us > tolon) X Ty = 180C Ty= 259C Ty = 55C Ipg. REVERSE ORAIN CURRENT (AMPERES) 1.0 0 20 40 60 80 0 0.4 08 12 16 2.0 Ip. DRAIN CURRENT (AMPERES) Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage DRAIN-TO-SOURCE ON-RESISTANCE (OHMS) (NORMALIZED) a a ec 0.75 0.50 -40 0 40 80 120 160 -40 0 40 80 120 160 Tj. JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature C-430ALE D ff 4a55452 oooaLse o f INTERNATIONAL RECTIFIER IRFZ30, IRFZ32 Devices T-39-11 2000 Vas = 20 f=1MHz Cissy = Cys + Cgg, Cys SHORTED . Ciss = Coq 1500 2 15 w = = gs + Ogg 2 3 3 Z 5 1000 10 = 3 < 2 o So a HF 4 1p =38A 500 ao FOR TEST CI 2 18 0 10 20 30 40 50 0 10 20 30 40 Vpg. GRAIN-TO-SOURCE VOLTAGE (VOLTS) Oy, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 0.200 50 = Roston) OF 5 ps 2 os TION. INITIAL Ty = 25C, (THE MINIMAL a TING EFFECT WAS TED Pr 40 2 0.180 @ < Gi Z 2 = 0.125 = : = 30 a a w 0.100 = 3 3 2 2 S 0.075 z % 2 a z a & 0.050 s 10 3 & 0.025 ole 0 10 2 3 406 50 6 70 8 25 50 75 100 125 150 Ip. QRAIN CURRENT {AMPERES} Te, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 80 VARY ty TO OBTAIN 70 REQUIRED PEAK I TT @ 60 Veg = 10V fot, < = | 2 50 L z Vpp=058Ypsg Eg 7978 BV p55 a a 40 Fig. 15 Clamped Inductive Test Circuit Ew = 2 a = 20 10 0 7 PT) Te, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve Fig. 16 Clamped Inductive Waveforms C-431ie o ff yassus2 onosnaa 2 i IRFZ30, IRFZ32 Devices T-39. , INTERNATIONAL RECTIFIER ' 39-11 os REGULATOR (SOLATED SAME TYPE 12 BATTERY | 4 Vgg = 10 'p 0S | o o+ CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 17 Switching Time Test Circuit Fig. 18 Gate Charge Test Circuit 40!2 104 1 eo 0.1 Cg o = 60% UCL 2 2 10 90% UCL 8 =z 2 oo = a 3 99% UCL & = i & & & z a z 0.001 oc .! 104 102 1 0.0001 50 70 90 110 430 450 50 70 90 110 130 = 150 TEMPERATURE (C) TEMPERATURE (C) Fig. 19 Typical Time to Accumulated 1% Failure *Fig. 20 Typical High Temperature Reverse Bias (HTRB) Failure Rate The data shown is correct as of April 15, 1987. This Information is updated on a quarterly basis; for the latest reliability data, please contact your local IR field office. C-432