TIP127L Features * Medium Power Complementary Silicon Transistors * Halogen Free Available Upon Request By Adding Suffix "-HF" * Moisture Sensitivity Level 1 * Epoxy Meets UL 94 V-0 Flammability Rating * Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix Designates RoHS Compliant. See Ordering Information) PNP Plastic-Encapsulate Transistors * Maximum Ratings @ 25C Unless Otherwise Specified * Operating Junction Temperature Range: -55 to +150 * Storage Temperature Range: -55 to +150 * Thermal Resistance: 62.5/W Junction to Ambient Parameter TO-220 Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -5 A Power Dissipation PD 2 W Note: 1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. B C F S Q A T U 1 2 3 H K D R G Device Marking: TIP127 J V L 1.BASE 2.COLLECTOR 3.EMITTER Internal Structure COLLECTOR DIM A B C D F G H J K L N Q R S T U V BASE 7.2 k 230 EMITTER Rev.3-3-12012020 N 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.560 0.625 14.22 15.88 0.380 0.420 9.65 10.67 0.140 0.190 3.56 4.82 0.020 0.045 0.51 1.14 0.139 0.161 3.53 4.09 0.090 0.110 2.29 2.79 ----- 0.250 ----- 6.35 0.012 0.025 0.30 0.64 0.500 0.580 12.70 14.73 0.045 0.060 1.14 1.52 0.190 0.210 4.83 5.33 0.100 0.135 2.54 3.43 0.080 0.115 2.04 2.92 0.045 0.055 1.14 1.39 0.230 0.270 5.84 6.86 ----- 0.050 ----- 1.27 0.045 ----- 1.15 ----- NOTE MCCSEMI.COM TIP127L Electrical Characteristics @ TA=25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V(BR)CBO -100 V IC=-1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -100 V IC=-30mA, IB=0 Collector Cutoff Current ICBO -0.2 mA VCB=-100V, IE=0 Collector Cutoff Current ICEO -0.5 mA VCE=-30V, IB=0 Emitter Cutoff Current IEBO -2 mA VEB=5V, IC=0 DC Current Gain Collector-Emitter Saturation Voltage hFE(1) 1000 VCE=-3V, IC=-0.5A hFE(2) 1000 VCE=-3V, IC=-3A VCE(sat) Base-Emitter Voltage VBE Collector Output Capacitance Cob Rev.3-3-12012020 -2.0 V IC=-3A, IB=-12mA -4.0 V IC=-5A, IB=-20mA -2.5 V VCE=-3V, IC=-3A pF VCB=-10V, IE=0,f=1MHz 300 2/4 MCCSEMI.COM TIP127L Curve Characteristics Fig. 2 - DC Current Gain Characteristics Fig. 1 - Static Characteristics 10000 -6 Common Emitter TA=25C -1.0mA -0.9mA -0.8mA -4 TA=100C 1000 DC Current Gain Collector Current (A) -5 -0.7mA -0.6mA -3 -0.5mA -2 -0.4mA TA=25C 100 -0.3mA -1 Common Emitter VCE= - 3V IB=-0.2mA -0 -0 -2 -4 -6 10 -8 -1 -10 Base-Emitter Saturation Voltage (V) Collector-Emitter Saturation Voltage (mV) -5000 -2.0 -1000 -800 -600 TA=25C -400 TA=100C -200 -1.6 TA=25C -1.2 -0.8 TA=100C -0.4 =250 -1 -10 -100 -1000 -0.0 -5000 =250 -1 -10 -100 -1000 -5000 Collector Current (mA) Collector Current (mA) Fig. 6 - Collector Power Derating Curve Fig. 5 - Base-Emitter Voltage Characteristics 2.5 -5000 Collector Power Dissipation (W) -1000 Collcetor Current (mA) -1000 Fig. 4 - Base-Emitter Saturation Voltage Characteristics Fig. 3 - Collector-Emitter Saturation Voltage Characteristics -1200 -0 -100 Collector Current (mA) Collector-Emitter Voltage (V) TA=100C -100 -10 TA=25C -1 2.0 1.5 1.0 0.5 Common Emitter VCE= - 3V -0.1 -0.0 0.0 -0.5 -1.0 -1.5 -2.0 Rev.3-3-12012020 0 25 50 75 100 125 150 Ambient Temperature (C) Base-Emitter Voltage (V) 3/4 MCCSEMI.COM TIP127L Ordering Information Device Packing Part Number-BP Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton Note : Adding "-HF" Suffix For Halogen Free, eg. 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