MCCSEMI.COM
Rev.3-3-12012020
1/4
TIP127L
PNP
Plastic-Encapsulate
Transistors
TO-220
MIN MAX MIN MAX
A 0.560 0.625 14.22 15.88
B 0.380 0.420 9.65 10.67
C 0.140 0.190 3.56 4.82
D 0.020 0.045 0.51 1.14
F 0.139 0.161 3.53 4.09 Φ
G0.090 0.110 2.29 2.79
H----- 0.250 ----- 6.35
J 0.012 0.025 0.30 0.64
K 0.500 0.580 12.70 14.73
L 0.045 0.060 1.14 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.135 2.54 3.43
R 0.080 0.115 2.04 2.92
S 0.045 0.055 1.14 1.39
T 0.230 0.270 5.84 6.86
U----- 0.050 ----- 1.27
V 0.045 ----- 1.15 -----
DIMENSIONS
DIM INCHES MM NOTE
B
A
K
H
GN
C
S
U
T
J
R
L
D
V
F
Q
1
23
1.BASE
2.COLLECTOR
3.EMITTER
Note: 1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
PD
Continuous Collector Current IC-5 A
Power Dissipation
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Collector-Base Voltage VCBO -100 V
• Operating Junction Temperature Range: -55℃ to +150℃
• Storage Temperature Range: -55℃ to +150℃
• Thermal Resistance: 62.5℃/W Junction to Ambient
Parameter Symbol Rating Unit
Maximum Ratings @ 25°C Unless Otherwise Specified
Features
• Medium Power Complementary Silicon Transistors
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Moisture Sensitivity Level 1
• Epoxy Meets UL 94 V-0 Flammability Rating
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix Designates
RoHS Compliant. See Ordering Information)
•
2 W
≈7.2 k
BASE
COLLECTOR
≈230
EMITTER
Internal Structure
Device Marking: TIP127
MCCSEMI.COM
2/4
TIP127L
Collector Cutoff Current ICEO
VCB=-10V, IE=0,f=1MHz
VVCE=-3V, IC=-3A
hFE(2) 1000
Emitter Cutoff Current IEBO -2
-2.5
-4.0 V
Base-Emitter Voltage VBE
Collector Output Capacitance Cob
Collector-Emitter Breakdown Voltage V(BR)CEO -100
Electrical Characteristics @ TA=25°C Unless Otherwise Specified
Parameter Symbol Min Typ Max Units Conditions
Collector-Base Breakdown Voltage V(BR)CBO -100 V IC=-1mA, IE=0
hFE(1) 1000
IC=-30mA, IB=0
VCE=-30V, IB=0
VEB=5V, IC=0
V
-0.5 mA
DC Current Gain
300 pF
VCE=-3V, IC=-0.5A
IC=-3A, IB=-12mA
-2.0 V
Collector Cutoff Current ICBO -0.2 mA VCB=-100V, IE=0
Collector-Emitter Saturation Voltage VCE(sat)
mA
VCE=-3V, IC=-3A
IC=-5A, IB=-20mA
Rev.3-3-12012020
MCCSEMI.COM
Curve Characteristics
3/4
TIP127L
-0 -2 -6 -8
-1
-2
-3
-4
-5
-0
-6
-1.0mA
-0.9mA-0.8mA -0.7mA
-0.6mA
-0.5mA
-0.4mA
-0.3mA
IB=-0.2mA
Common Emitter
TA=25°C
Collector Current (A)
-4
Collector-Emitter Voltage (V)
Fig. 1 - Static Characteristics
-10 -1000-1 -5000
100
1000
10
10000
Common Emitter
VCE= - 3V
TA=100°C
DC Current Gain
-100
Collector Current (mA)
Fig. 2 - DC Current Gain Characteristics
TA=25°C
-1 -10 -1000 -5000
-0.4
-0.8
-1.2
-1.6
-0.0
-2.0
β=250
TA=100°C
Base-Emitter Saturation Voltage (V)
-100
Collector Current (mA)
Fig. 4 - Base-Emitter Saturation Voltage Characteristics
TA=25°C
-10 -1000-1 -5000
-200
-400
-600
-800
-1000
-0
-1200
β=250
TA=100°C
Collector-Emitter Saturation Voltage (mV)
-100
Collector Current (mA)
Fig. 3 - Collector-Emitter Saturation Voltage Characteristics
TA=25°C
-1
-10
-100
-1000
-0.1
-5000
-0.0 -0.5 -1.5 -2.0
Common Emitter
VCE= - 3V
TA=100°C
TA=25°C
-1.0
Base-Emitter Voltage (V)
Collcetor Current (mA)
Fig. 5 - Base-Emitter Voltage Characteristics
0 25 125 150
0.0
0.5
1.0
1.5
2.0
2.5
Collector Power Dissipation (W)
50 75 100
Ambient Temperature (°C)
Fig. 6 - Collector Power Derating Curve
Rev.3-3-12012020
MCCSEMI.COM
Ordering Information
4/4
TIP127L
Rev.3-3-12012020
Device Packing
Part Number-BPBulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton
Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-BP-HF
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