© Semiconductor Components Industries, LLC, 2014
July, 2018 − Rev. 2 1Publication Order Number:
NTMFS4C03N/D
NTMFS4C03N
Power MOSFET
30 V, 2.1 mW, 136 A, Single N−Channel,
SO−8FL
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS "20 V
Continuous Drain Cur-
rent RqJC (Notes 1, 3) Steady
State
TC = 25°C ID136 A
Power Dissipation
RqJC (Notes 1, 3) TC = 25°C PD64 W
Continuous Drain
Current RqJA
(Notes 1, 2, 3) Steady
State
TA = 25°C ID30 A
Power Dissipation
RqJA (Notes 1, 2, 3) TA = 25°C PD3.1 W
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 352 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
150 °C
Source Current (Body Diode) IS53 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 11 A) EAS 549 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 2) RqJC 1.95 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 40
1. The e ntire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
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A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4C03N
AYWZZ
1
V(BR)DSS RDS(ON) MAX ID MAX
30 V 2.1 mW @ 10 V 136 A
2.8 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device Package Shipping†
ORDERING INFORMATION
NTMFS4C03NT1G SO−8FL
(Pb−Free) 1500 /
Tape & Reel
NTMFS4C03NT3G SO−8FL
(Pb−Free) 5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4C03N
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ18.2 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V TJ = 25 °C 1 mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ4.8 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 1.5 2.1 mW
VGS = 4.5 V ID = 30 A 2.2 2.8
Forward Transconductance gFS VDS = 3 V, ID = 30 A 136 S
Gate Resistance RGTA = 25 °C 1.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
3071
pF
Output Capacitance COSS 1673
Reverse Transfer Capacitance CRSS 67
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
20.8
nC
Threshold Gate Charge QG(TH) 4.9
Gate−to−Source Charge QGS 8.5
Gate−to−Drain Charge QGD 4.7
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V,
ID = 30 A 45.2 nC
SWITCHING CHARACTERISTICS (Note 5)
T urn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
14
ns
Rise Time tr32
T urn−Off Delay Time td(OFF) 27
Fall Time tf17
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A TJ = 25°C 0.75 1.1 V
TJ = 125°C 0.6
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
47
ns
Charge Time ta23
Discharge Time tb24
Reverse Recovery Charge QRR 39 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTMFS4C03N
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
VGS = 10 V
3.4 V
3.2 V
3.0 V
2.8 V
TJ = 25°C
TJ = 25°C
TJ = 150°C
TJ = −55°C
ID = 30 A
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
3.8 V
3.6 V
2.6 V
TJ = 25°C
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
345678910
0
25
50
75
100
125
150
175
200
225
250
0.0 0.5 1.0 1.5 2.0 2.5 3.0
4.5 V
0
25
50
75
100
125
150
175
200
225
250
1.5 2 2.5 3 3.5 4 4.5
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 25 50 75 100 125 150 175 200 225 250
VDS = 3 V
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
15012510075250
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
50
ID = 30 A
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6 −25−50
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
30252015105
10
100
1000
10000
IDSS, LEAKAGE (nA)
VGS = 0 V
TJ = 85°C
TJ = 125°C
TJ = 100°C
0
NTMFS4C03N
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.01
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
Coss
Crss
VDD = 15 V
ID = 15 A
VGS = 4.5 V
td(on)
tr
tf
TJ = 25°C
TJ = 150°C
VGS = 0 V
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
TJ = 25°C
VDS = 15 V
ID = 30 A
DC
1000
td(off)
10
100
1000
10000
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
3
6
9
12
15
18
0
1
2
3
4
5
6
7
8
9
10
11
12
0 5 10 15 20 25 30 35 40 45 50
QT
Qgs Qgd
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
100
1000
0.1 1 10 100 0.1
1.0
10.0
100.0
1000.0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TJ = −55°C
VDS
VGS
VGS ≤ 10 V
TC = 25°C
100
10
1
0.1
0.01 0.1
NTMFS4C03N
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5
TYPICAL CHARACTERISTICS
Figure 12. Thermal Impedance (Junction−to−Ambient)
PULSE TIME (sec)
R(t) (°C/W)
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
0.001
0.01
0.1
1
10
100
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03
RqJA Steady State = 40°C/W
PCB Cu Area = 650 mm2
PCB Cu Thk = 2 oz
Figure 13. Avalanche Characteristics
TIME IN AVALANCHE (s) 1.00E−021.00E−03
1
10
IPEAK, (A)
1.00E−04
100
TJ(initial) = 25°C
TJ(initial) = 100°C
NTMFS4C03N
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6
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M3.00 3.40
q0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
M
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
e
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
2X
0.475
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