PD - 96071A IRF7402UPbF HEXFET(R) Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 20V RDS(on) = 0.035 Top View Description Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 6.8 5.4 54 2.5 1.6 0.02 12 5.0 -55 to + 150 Units A W W/C V V/ns C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. Units 50 C/W 1 09/14/06 IRF7402UPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- 0.70 6.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.024 --- V/C Reference to 25C, ID = 1mA 0.035 VGS = 4.5V, ID = 4.1A 0.050 VGS = 2.7V, ID = 3.5A --- --- V VDS = VGS, ID = 250A --- --- S VDS = 10V, ID = 1.9A --- 1.0 VDS = 16V, VGS = 0V A --- 25 VDS = 16V, V GS = 0V, TJ = 125C --- 100 VGS = 12V nA --- -100 VGS = -12V 14 22 ID = 3.8A 2.0 3.0 nC VDS = 16V 6.3 9.5 VGS = 4.5V, See Fig. 6 and 12 5.1 --- VDD = 10V 47 --- ID = 3.8A ns 24 --- RG = 6.2 32 --- R D = 2.6 650 --- VGS = 0V 300 --- pF VDS = 15V 150 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units 2.5 54 --- --- --- --- 51 69 1.2 77 100 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 3.8A, VGS = 0V TJ = 25C, IF = 3.8A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD 3.8A, di/dt 96A/s, VDD V(BR)DSS, TJ 150C 2 Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec This data sheet has curves & data from IRF7601 www.irf.com IRF7402UPbF 100 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 10 1 20s PULSE WIDTH TJ = 25C A 1.5V 0.1 0.1 1 10 10 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150C TJ = 25C V DS = 10V 20s PULSE WIDTH 2.0 2.5 3.0 A 3.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 Fig 2. Typical Output Characteristics 2.0 1.5 1 VDS , Drain-to-Source Voltage (V) 100 0.1 20s PULSE WIDTH TJ = 150C A 0.1 0.1 Fig 1. Typical Output Characteristics 1 1.5V 1 VDS , Drain-to-Source Voltage (V) 10 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D TOP I D = 3.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 A 80 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7402UPbF 1000 C, Capacitance (pF) Ciss 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS, Gate-to-Source Voltage (V) 1200 800 Coss 600 400 Crss 200 0 1 10 100 I D = 3.8A VDS = 16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 12 16 20 24 A Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) 8 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 100 10 TJ = 150C TJ = 25C 1 VGS = 0V 0.1 0.4 0.8 1.2 1.6 2.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 4 A 2.4 100us 10 1ms 1 TC = 25 C TJ = 150 C Single Pulse 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7402UPbF 8.0 RD V DS ID , Drain Current (A) V GS 6.0 D.U.T. RG + - V DD 4.5V 4.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7402UPbF 6 www.irf.com IRF7402UPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) ' $ + >@ ( $ H >@ 0,//,0(7(56 0,1 0$; E F ' ( H H + ; H ;E ,1&+(6 0,1 0$; $ $ ',0 % $ $ %$6,& %$6,& %$6,& %$6,& . / \ .[ & \ >@ & $ % 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;/ ;F )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking www.irf.com 7 IRF7402UPbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2006 8 www.irf.com