N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
*R
DS(on)=3Ω
* Low threshold volt a ge
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Continuo us Drain Cur rent at Tamb=25°C ID320 mA
Pulsed Drain Current IDM 6A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 100 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 0.75 1.5 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 10
500 µA
µAVDS=100 V, VGS=0
VDS=80 V, VGS=0V, T=125°C
(2)
On-State Drain Current(1) ID(on) 750 mA VDS=25 V, VGS=5V
Static Drain-Source On-State
Resistance (1) RDS(on) 4.5
3.0 Ω
ΩVGS=5V,ID=250mA
VGS=10V, ID=500mA
Forward Transconductance
(1)(2) gfs 225 mS VDS=25V,ID=500mA
Input Capacitance (2) Ciss 75 pF
Common So urce Output
Capacitance (2) Coss 25 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2) Crss 8pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈25V, VGS=10V, ID=1A
Rise Time (2)(3) tr12 ns
Turn-Off Delay Time (2)(3) td(off) 15 ns
Fall Time (2)(3) tf13 ns
E-Line
TO92 Compatible
ZVNL110A
3-400
D
G
S
