Integrated Circuit Solution Inc. 1
SSR012-0B
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control
using MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-pin LQFP and
119-pin PBGA package
• Single +3.3V, +10%, –5% power supply
• Power-down snooze mode
DESCRIPTION
The ICSI IS61SP12836 is a high-speed, low-power synchro-
nous static RAM designed to provide a burstable, high-perfor-
mance, secondary cache for the i486™, Pentium™, 680X0™,
and PowerPC™ microprocessors. It is organized as 131,072
words by 36 bits, fabricated with ICSI's advanced CMOS
technology. The device integrates a 2-bit burst counter, high-
speed SRAM core, and high-drive capability outputs into a
single monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single clock
input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQa, BW2 controls DQb, BW3 controls DQc,
BW4 controls DQd, conditioned by BWE being LOW. A LOW
on GW input would cause all bytes to be written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller) input
pins. Subsequent burst addresses can be generated internally
by the IS61SP12836 and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Interleave
burst is achieved when this pin is tied HIGH or left floating.
IS61SP12836
128K x 36 SYNCHRONOUS
PIPELINED STATIC RAM
FAST ACCESS TIME
Symbol Parameter -166 -150 -133 -117 -5 Units
tKQ Clock Access Time 3.5 3.8 4 4 5 ns
tKC Cycle Time 6 6.7 7.5 8.5 10 ns
Frenquency 166 150 133 117 100 MHz