A623308 Series Preliminary 8K X 8 BIT CMOS SRAM Document Title 8K X 8 BIT CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue July 2, 1999 Preliminary 0.1 Erase 55ns part December 14, 2000 0.2 Add -SI/SU part no. and change ICC1, Isb1 December 11, 2002 0.3 Erase 28-pin TSOP reverse type package December 23, 2002 PRELIMINARY (December, 2002, Version 0.3) AMIC Technology, Corp. A623308 Series Preliminary 8K X 8 BIT CMOS SRAM Features n External Operating Voltage: 4.5V to 5.5V n Access times: 70 ns (max.) n Current: A623308-S series: Operating: 35mA (max.) Standby: 10A (max.) A623308-SI/SU series: Operating: 35mA (max.) Standby: 15A (max.) n Extended operating temperature range: 0C to 70C for -S series, -25C to 85C for -SI series, -40C to 85C for -SU series. n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL compatible n Common I/O using three-state output n Data retention voltage: 2.0V (min.) n Available in 28-pin SOP and TSOP (forward type) packages General Description Minimum standby power is drawn by this device when CE is at a high level, independent of the other input levels. Data retention is guaranteed at a power supply voltage as low as 2.0V. The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. Pin Configurations 1 28 VCC 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O2 13 16 I/O4 GND 14 15 I/O3 (December, 2002, Version 0.3) OE A11 A9 A8 NC WE VCC NC A12 A7 A6 A5 A4 A3 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 ~ ~ NC A12 A623308M PRELIMINARY n TSOP A623308V ~ ~ n SOP 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 AMIC Technology, Corp. A623308 Series Block Diagram VCC A5 GND A9 ROW 128 X 512 DECODER MEMORY ARRAY A11 A12 I/O 0 COLUMN I/O INPUT DATA CIRCUIT COLUMN DECODER I/O 7 A0 CE A4 A10 CONTORL OE CIRCUIT WE Pin Descriptions - SOP Pin No. Symbol 1,26 NC 2-10, 21, 23-25 Pin Description-TSOP Pin No. Symbol No Connection 5,8 NC No Connection A0 - A12 Address Input 1 OE Output Enable 11-13, 15-19 I/O0 - I/O7 Data Inputs/Outputs 2-4, 9-17, 28 A0 - A12 Address Input 14 GND Ground 7 VCC Power Supply 20 CE Chip Enable 6 WE Write Enable 22 OE Output Enable 18-20, 22-26 I/O0 - I/O7 27 WE Write Enable 21 GND 28 VCC Power Supply 27 CE PRELIMINARY Description (December, 2002, Version 0.3) 2 Description Data Inputs/Outputs Ground Chip Enable AMIC Technology, Corp. A623308 Series Recommended DC Operating Conditions (TA = 0C to +70C, -25C to +85C or -40C to +85C) Symbol Parameter Min. Typ. Max. Unit 4.5 5.0 5.5 V 0 0 0 V VCC Supply Voltage GND Ground VIH Input High Voltage 2.2 3.5 VCC + 0.3 V VIL Input Low Voltage -0.3 0 +0.8 V Absolute Maximum Ratings* *Comments VCC to GND . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V IN, IN/OUT Volt to GND . . . . . . . . . -0.5V to VCC + 0.5V Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0C to +70C or -40C to +85C Storage Temperature, Tstg . . . . . . . . . -55C to +125C Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . 0.7W Soldering Temp. & Time . . . . . . . . . . . . . 260C, 10 sec Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied and exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics (TA = 0C to +70C, -25C to +85C or -40C to +85C, VCC = 5.0V 10%, GND = 0V) Symbol Parameter A623308-70S A623308-70SI/SU Min. Max. Min. Max. Unit Conditions ILI Input Leakage Current - 1 - 1 A VIN = GND to VCC ILO Output Leakage Current - 1 - 1 A CE = VIH or OE = VIH or WE = VIH VI/O = GND to VCC ICC Active Power Supply Current - 5 - 5 mA CE = VIL, II/O = 0mA ICC1 Dynamic Operating Current - 35 - 35 mA Min. Cycle, Duty = 100% CE = VIL, II/O = 0mA ICC2 Dynamic Operating Current - 5 - 5 mA CE = VIL, VIH = VCC VIL = 0V, f = 1 MHz II/O = 0 mA PRELIMINARY (December, 2002, Version 0.3) 3 AMIC Technology, Corp. A623308 Series DC Electrical Characteristics (continued) Symbol ISB A623308-70S Parameter A623308-70SI/SU Unit Conditions Min. Max. Min. Max. - 0.5 - 0.5 mA CE = VIH - 10 - 15 A CE VCC - 0.2V VIN 0V Supply Current Standby Power ISB1 VOL Output Low Voltage - 0.4 - 0.4 V IOL = 2.1mA VOH Output High Voltage 2.4 - 2.4 - V IOH = -1.0mA Truth Table Mode I/O Operation Supply Current CE OE WE Standby H X X High Z ISB, ISB1 Output Disable L H H High Z ICC, ICC1, ICC2 Read L L H DOUT ICC, ICC1, ICC2 Write L X L DIN ICC, ICC1, ICC2 Note: X: H or L Capacitance (TA = 25C, f = 1.0 MHz) Symbol Parameter Min. Max. Unit Conditions CIN* Input Capacitance 6 pF VIN = 0V CI/O* Input/Output Capacitance 8 pF VI/O = 0V * These parameters are sampled and not 100% tested. PRELIMINARY (December, 2002, Version 0.3) 4 AMIC Technology, Corp. A623308 Series AC Characteristics (TA = 0C to +70C, -25C to +85C or -40C to +85C, VCC = 5.0V 10%) Symbol A623308-70S/SI/SU Parameter Unit Min. Max. 70 - ns Read Cycle tRC Read Cycle Time tAA Address Access Time - 70 ns tACE Chip Enable Access Time - 70 ns tOE Output Enable to Output Valid - 35 ns tCLZ Chip Enable to Output in Low Z 10 - ns tOLZ Output Enable to Output in Low Z 5 - ns tCHZ Chip Disable to Output in High Z - 25 ns tOHZ Output Disable to Output in High Z - 25 ns tOH Output Hold from Address Change 5 - ns tWC Write Cycle Time 70 - ns tCW Chip Enable to End of Write 60 - ns tAS Address Set up Time 0 - ns tAW Address Valid to End of Write 60 - ns tWP Write Pulse Width 50 - ns tWR Write Recovery Time 0 - ns tWHZ Write to Output in High Z - 30 ns tDW Data to Write Time Overlap 30 - ns tDH Data Hold from Write Time 0 - ns tOW Output Active from End of Write 5 - ns Write Cycle Notes: tCHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels. PRELIMINARY (December, 2002, Version 0.3) 5 AMIC Technology, Corp. A623308 Series Timing Waveforms Read Cycle 1 (1) tRC Address tAA OE tOE tOH tOLZ5 CE tOHZ5 tACE tCHZ5 tCLZ5 DOUT Read Cycle 2 (1, 2, 4) tRC Address tAA tOH tOH DOUT PRELIMINARY (December, 2002, Version 0.3) 6 AMIC Technology, Corp. A623308 Series Timing Waveforms (continued) Read Cycle 3 (1, 3, 4) CE tACE tCLZ 5 tCHZ 5 DOUT Notes: 1. 2. 3. 4. 5. WE is high for Read Cycle. Device is continuously enabled, CE = VIL. Address valid prior to or coincident with CE transition low. OE = VIL. Transition is measured 500mV from steady state. This parameter is sampled and not 100% tested. (6) Write Cycle 1 (Write Enable Controlled) tWC Address tAW tWR 3 tCW5 CE (4) tAS1 tWP 2 WE tDW tDH DIN tWHZ 7 tOW 7 DOUT PRELIMINARY (December, 2002, Version 0.3) 7 AMIC Technology, Corp. A623308 Series Timing Waveforms (continued) (6) Write Cycle 2 (Chip Enable Controlled) tWC Address tWR 3 tAW tCW5 CE tAS1 (4) tWP 2 WE tDW tDH DIN tWHZ7 DOUT Notes: 1. 2. 3. 4. tAS is measured from the address valid to the beginning of Write. A Write occurs during the overlap (tWP) of a low CE and a low WE . tWR is measured from the earliest of CE or WE going high to the end of the Write cycle. If the CE low transition occurs simultaneously with the WE low transition or after the WE transition, outputs remain in a high impedance state. 5. tCW is measured from the later of CE going low to the end of Write. 6. OE level is high or low. 7. Transition is measured 500mV from steady. This parameter is sampled and not 100% tested. PRELIMINARY (December, 2002, Version 0.3) 8 AMIC Technology, Corp. A623308 Series AC Test Conditions Input Pulse Levels 0V, 3.0V Input Rise And Fall Time 5 ns Input and Output Timing Reference Levels 1.5V Output Load See Figure 1,2 +5V +5V 1800 1800 I/O I/O 990 CL CL 990 30pF* 5pF* * Including scope and jig. * Including scope and jig. Figure 1. Output Load Figure 2. Output Load for tCLZ tOLZ , tCHZ, tOHZ, tWHZ, and tow Data Retention Characteristics (TA = 0C to +70C, -25C to +85C or -40C to +85C) Symbol Parameter Min. Max. Unit Conditions VDR VCC for Data Retention 2.0 5.5 V CE VCC - 0.2V ICCDR Data Retention Current - 3 A VCC = 2.0V, CE VCC - 0.2V VIN 0V tCDR Chip Disable to Data Retention Time 0 - ns tRC - ns See Retention Waveform tR Operation Recovery Time Low VCC Data Retention Waveform DATA RETENTION MODE VCC 4.5V tCDR 4.5V tR VDR 2.0V VIH VIH CE CE VDR - 0.2V PRELIMINARY (December, 2002, Version 0.3) 9 AMIC Technology, Corp. A623308 Series Ordering Information Operating Current Max. (mA) Standby Current Max. (A) Package A623308M-70S 35 10 28L SOP A623308V-70S 35 10 28L TSOP (Forward) 35 15 28L SOP A623308V-70SI 35 15 28L TSOP (Forward) A623308M-70SU 35 15 28L SOP A623308V-70SU 35 15 28L TSOP (Forward) Part No. Access Time (ns) A623308M-70SI PRELIMINARY 70 (December, 2002, Version 0.3) 10 AMIC Technology, Corp. A623308 Series Package Information SOP (W.B.) 28L Outline Dimensions unit: inches/mm H 15 E 28 L 1 B Detail F 14 L1 A1 e S D y A A2 c D Seating Plane y See Detail F Dimensions in inches Symbol Min Nom Max A - - 0.112 A1 0.004 - - A2 0.093 0.098 0.103 Dimensions in mm Min Nom Max - - 2.85 0.10 - - 2.36 2.49 2.62 0.51 B 0.014 0.016 0.020 0.36 0.41 C 0.008 0.010 0.012 0.20 0.25 0.30 D - 0.713 0.728 - 18.11 18.49 E 0.326 0.331 0.336 8.28 8.41 8.53 e 0.044 0.050 0.056 1.12 1.27 1.42 H 0.453 0.465 0.477 11.51 11.81 12.12 1.12 L 0.028 0.036 0.044 0.71 0.91 L1 0.059 0.067 0.075 1.50 1.70 1.91 S - - 0.047 - - 1.19 y - - 0.004 - - 0.10 0 - 8 0 - 8 Notes: 1. The maximum value of dimension D includes end flash. 2. Dimension E does not include resin fins. 3. Dimension S includes end flash. PRELIMINARY (December, 2002, Version 0.3) 11 AMIC Technology, Corp. A623308 Series Package Information TSOP 28L TYPE I (8 X 13.4mm) Outline Dimensions unit: inches/mm D1 Detail "A" 28 A1 E c A A2 1 e 14 L 15 D D Detail "A" y S Dimensions in inches Symbol b Dimensions in mm Min Nom Max Min Nom Max A - - 0.049 - - 1.25 A1 0.002 - - 0.05 - - A2 0.037 0.039 0.041 0.95 1.00 1.05 b 0.007 0.009 0.011 0.17 0.22 0.27 c 0.005 - 0.008 0.12 - 0.21 E 0.311 0.315 0.319 7.90 8.00 8.10 L 0.012 0.020 0.028 0.30 0.50 0.70 D 0.520 0.528 0.536 13.20 13.40 13.60 D1 0.461 0.465 0.469 11.70 11.80 11.90 e 0.022 BSC S 0.55 BSC 0.017 TYP 0.425 TYP y - - 0.004 - - 0.10 0 - 5 0 - 5 Notes: 1. The maximum value of dimension D1 includes end flash. 2. Dimension E does not include resin fins. 3. Dimension S includes end flash. PRELIMINARY (December, 2002, Version 0.3) 12 AMIC Technology, Corp.