BZT52C2V4S-BZT52C75S
200mW, 5% Tolerance SMD Zener Diode
Small Signal Diode
VZ Tolerance Selection of ±5%
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min Max Min Max
Case : Flat lead SOD-323 small outline plastic package 1.15 1.35 0.045 0.053
2.30 2.70 0.091 0.106
0.25 0.40 0.010 0.016
1.60 1.80 0.063 0.071
0.80 1.00 0.031 0.039
0.05 0.20 0.002 0.008
Package
SOD-323F
Maximum Ratings
IF=10mA
Notes:1. Valid provided that electrodes are kept at ambient temperature
VBR : Voltage at IZK
IZK : Test current for voltage VBR
ZZK : Dynamic impedance at IZK
IZT : Test current for voltage VZ
VZ: Voltage at current IZT
ZZT : Dynamic impedance at IZT
IZM : Maximum steady state current
VZM : Voltage at IZM
Zener I vs. V Characteristics
V
Thermal Resistance (Junction to Ambient) (Note 1) RθJA 625 °C/W
Forward Voltage 1
°C
D
E
Units
mW
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
Ordering Information
BZT52CxxS RR 3Kpcs/7" Reel
Part No. Packing
-65 to + 150
Value
200
Junction and Storage Temperature Range
VF
TJ, TSTG
PD
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Power Dissipation
Symbol
F
High temperature soldering guaranteed: 260 °C/10s
Polarity : Indicated by cathode band
Weight : 4.02±0.5 mg
A
B
C
SOD-323F
Maximum Ratings and Electrical Characteristics
Features
Mechanical Data
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Unit (mm)
Wide zener voltage range selection : 2.4V to 75V
Unit (inch)
Dimensions
Voltage
Current
IF
VF
VR
IR
VBR
IZK
VZ
IZT
VZM
IZM
Forward RegionLeakage RegionBreakdownRegion
D
A
B
C
E
F
Version : D10
BZT52C2V4S-BZT52C75S
200mW, 5% Tolerance SMD Zener Diode
Small Signal Diode
Electrical Characteristics
Ta = 25°C unless otherwise noted
VF Forward Volatge = 1 V Maximum @ IF = 10mA for all part numbers
Device
Marking Min Nom Max
BZT52C2V4S Z0 2.28 2.40 2.52 5 100 1 564 45 1
BZT52C2V7S Z1 2.57 2.70 2.84 5 100 1 564 18 1
BZT52C3V0S Z2 2.85 3.00 3.15 5 100 1 564 9 1
BZT52C3V3S Z3 3.14 3.30 3.47 5 95 1 564 4.5 1
BZT52C3V6S Z4 3.42 3.60 3.78 5 90 1 564 4.5 1
BZT52C3V9S Z5 3.71 3.90 4.10 5 90 1 564 2.7 1
BZT52C4V3S Z6 4.09 4.30 4.52 5 90 1 564 2.7 1
BZT52C4V7S Z7 4.47 4.70 4.94 5 80 1 470 2.7 2.0
BZT52C5V1S Z8 4.85 5.10 5.36 5 60 1 451 1.8 2.0
BZT52C5V6S Z9 5.32 5.60 5.88 5 40 1 376 0.9 2.0
BZT52C6V2S ZA 5.89 6.20 6.51 5 10 1 141 2.7 4.0
BZT52C6V8S ZB 6.46 6.80 7.14 5 15 1 75 1.8 4.0
BZT52C7V5S ZC 7.11 7.50 7.86 5 15 1 75 0.9 5.0
BZT52C8V2S ZD 7.79 8.20 8.61 5 15 1 75 0.63 5.0
BZT52C9V1S ZE 8.65 9.10 9.56 5 15 1 94 0.45 6.0
BZT52C10S ZF 9.50 10.00 10.50 5 20 1 141 0.18 7.0
BZT52C11S ZG 10.45 11.00 11.55 5 20 1 141 0.09 8.0
BZT52C12S ZH 11.40 12.00 12.60 5 25 1 141 0.09 8.0
BZT52C13S ZJ 12.35 13.00 13.65 5 30 1 160 0.09 8.0
BZT52C15S ZK 14.25 15.00 15.75 5 30 1 188 0.045 10.5
BZT52C16S ZL 15.20 16.00 16.80 5 40 1 188 0.045 11.2
BZT52C18S ZM 17.10 18.00 18.90 5 45 1 212 0.045 12.6
BZT52C20S ZN 19.00 20.00 21.00 5 55 1 212 0.045 14.0
BZT52C22S ZP 20.90 22.00 23.10 5 55 1 235 0.045 15.4
BZT52C24S ZR 22.80 24.00 25.20 5 70 1 235 0.045 16.8
BZT52C27S ZS 25.65 27.00 28.35 2 80 0.5 282 0.045 18.9
BZT52C30S ZT 28.50 30.00 31.50 2 80 0.5 282 0.045 21.0
BZT52C33S ZU 31.35 33.00 34.65 2 80 0.5 306 0.045 23.0
BZT52C36S ZV 34.20 36.00 37.80 2 90 0.5 329 0.045 25.2
BZT52C39S ZW 37.05 39.00 40.95 2 130 0.5 329 0.045 27.3
BZT52C43S ZX 40.85 43.00 45.15 2 150 0.5 353 0.045 30.1
BZT52C47S ZY 44.65 47.00 49.35 2 170 0.5 353 0.045 33.0
BZT52C51S Z- 48.45 51.00 53.55 2 180 0.5 376 0.045 35.7
BZT52C56S Z= 53.20 56.00 58.80 2 200 0.5 400 0.045 39.2
BZT52C62S Z 58.90 62.00 65.10 2 215 0.5 423 0.045 43.4
BZT52C68S Z> 64.60 68.00 71.40 2 240 0.5 447 0.045 47.6
BZT52C75S Z< 71.25 75.00 78.75 2 255 0.5 470 0.045 52.5
Notes:
1. The Zener Volta
g
e
(
V
Z
)
is tested under pulse condition of 10ms
.
2. The device numbers listed have a standard tolerance on the nominal zener volta
g
e o
f
±5%.
4. The Zener impedance is derived from the 60-cycle ac volatge, which results when an ac current having an rms value
equal to
ZZK @ IZK(Ω)
Max
VZ @ IZT (Volt) IR @ VR(μA)
Max
IZK(mA)IZT(mA) VR(V)
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and
tighter voltage tolerances, contact your nearest Taiwan semiconductor representative.
Part Number ZZT @ IZT(Ω)
Max
Version : D10
BZT52C2V4S-BZT52C75S
200mW, 5% Tolerance SMD Zener Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Forward Current (mA)
0
0
1
10
100
0123456789101112
Zener Current (mA)
Ta=25°C
FIG 3 Zener Breakdown Characteristics
0
0
1
10
100
15 25 35 45 55 65 75
Zener Current (mA)
Ta=25°C
Ta=150°C
Ta=25°C
FIG 6 Effect of Zener Voltage on Impedence
1
10
100
1000
1 10 100
Dynamic Impedence (Ώ)
FIG 5 Typical Capacitance
1
10
100
1000
1 10 100
Capacitance(pF)
Bias at 50% of VZ(Nom)
1V Bias
Iz=20m
Iz=5mA
Iz=1mA
Zener Voltage (V)
Forward Voltage (V)
FIG 2 Zener Breakdown Characteristics
Zener Voltage (V)
Zener Voltage (V)
Zener Voltage (V)
0.01
0.1
Version : D10
0
50
100
150
200
250
300
0 50 100 150 200
Power Dissipation (mW)
FIG 4 Admissible Power Disspation Curve
Ambient Tempeture (°C)
