CREAT BY ART
- Built-in strain relief
- Ideal for automated placement
- Glass passivated junction
- Low inductance
- Typical I
R
less than 1μA above 11V
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 qualified
Molding compound, UL flammability classification rating 94V-0
Standard Part No. with suffix "H" means automotive grade
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
SYMBOL UNIT
P
D
Watts
P
D
Watts
P
ZSM
Watts
T
J
°C
T
STG
°C
Document Number: DS_D1409041 Version: N15
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER
ORDER INFORMATION (EXAMPLE)
Non repetitive peak power dissipation (Note 1)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
VALUE
Note 1: Non Repetitive Peak surge P
D
Test Condition: tp=100μs sq. pulse, T
A
=25
o
C prior to surge
Operating junction temperature range
60
Power dissipation, R
THJA
<30K/W, T
A
=60°C
Power dissipation, R
THJA
<100K/W, T
A
=25°C
A
Case: DO-214AC (SMA)
DO-214AC (SMA)
Storage temperature range - 55 to +175
60
- 55 to +175
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
1.25
1SMA4737 - 1SMA200Z
1W, 7.5V - 200V Surface Mount Silicon Zener Diodes
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Taiwan Semiconductor
1SMA4737 R3G
Green compoundcode
Packingcode
Partno.
Vz@Iz
T
I
ZT
Z
ZT
@I
ZT
I
R
VmAΩΩmA μAV mA
1SMA4737 737A 7.5 34 4 700 0.50 5 5.0 605
1SMA4738 738A 8.2 31 4.5 700 0.50 5 6.0 550
1SMA4739 739A 9.1 28 5 700 0.50 5 7.0 500
1SMA4740 740A 10 25 7 700 0.25 5 7.6 454
1SMA4741 741A 11 23 8 700 0.25 1 8.4 414
1SMA4742 742A 12 21 9 700 0.25 1 9.1 380
1SMA4743 743A 13 19 10 700 0.25 1 9.9 344
1SMA4744 744A 15 17 14 700 0.25 1 11.4 304
1SMA4745 745A 16 15.5 16 700 0.25 1 12.2 285
1SMA4746 746A 18 14.0 20 750 0.25 1 13.7 250
1SMA4747 747A 20 12.5 22 750 0.25 1 15.2 225
1SMA4748 748A 22 11.5 23 750 0.25 1 16.7 205
1SMA4749 749A 24 10.5 25 750 0.25 1 18.2 190
1SMA4750 750A 27 9.5 35 750 0.25 1 20.6 170
1SMA4751 751A 30 8.5 40 1000 0.25 1 22.8 150
1SMA4752 752A 33 7.5 45 1000 0.25 1 25.1 135
1SMA4753 753A 36 7.0 50 1000 0.25 1 27.4 125
1SMA4754 754A 39 6.5 60 1000 0.25 1 29.7 115
1SMA4755 755A 43 6.0 70 1500 0.25 1 32.7 110
1SMA4756 756A 47 5.5 80 1500 0.25 1 35.8 95
1SMA4757 757A 51 5.0 95 1500 0.25 1 38.8 90
1SMA4758 758A 56 4.5 110 2000 0.25 1 42.6 80
1SMA4759 759A 62 4.0 125 2000 0.25 1 47.1 70
1SMA4760 760A 68 3.7 150 2000 0.25 1 51.7 65
1SMA4761 761A 75 3.3 175 2000 0.25 1 56.0 60
1SMA4762 762A 82 3.0 200 3000 0.25 1 62.2 55
1SMA4763 763A 91 2.8 250 3000 0.25 1 69.2 50
1SMA4764 764A 100 2.5 350 3000 0.25 1 76.0 45
1SMA110Z 110A 110 2.3 450 4000 0.25 1 83.6 -
1SMA120Z 120A 120 2.0 550 4500 0.25 1 91.2 -
1SMA130Z 130A 130 1.9 700 5000 0.25 1 98.8 -
1SMA150Z 150A 150 1.7 1000 6000 0.25 1 114.0 -
1SMA160Z 160A 160 1.6 1100 6500 0.25 1 121.6 -
1SMA180Z 180A 180 1.4 1200 7000 0.25 1 136.8 -
1SMA200Z 200A 200 1.2 1500 8000 0.25 1 152.0 -
Notes:
1. Tolerance and Type Number Designation. The type numbers losted have a standard tolerance on the nominal zener voltage of ±5%
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances
B. Matched sets
3. Zener Voltage (Vz) Measurement. Guarantees the zener voltage when messured at 90 seconds while maintaining the lead temperature(T
L
)
at 30℃±1°C, from the diode body
4. Zener Impedance (Zz) Derivation. The zener impedance is derives from the 60 cycle AC voltage, which results when an accurrent having and
rms value equal to 10% of the DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
5. Surge Current (I
R
) Non-Repetitive. The rating listd in the electrical chatacteristics table is maximum peak, non-repetitive, reverse surge current
of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
per JEDEC registration;
however, actual device capability is as described in Figure 10.
Document Number: DS_D1409041 Version: N15
1SMA4737 - 1SMA200Z
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T
A
=25°C unless otherwise noted)
Device
(Note 1)
Zener Impedance
(Note 2)
(Note 3)
Test
Current
Device
Marking
code
Nominal
Zener Voltage
Z
ZK
@I
ZK
Surge currentLeakage Current
I
R
@V
R
Max.
Document Number: DS_D1409041 Version: N15
1SMA4737 - 1SMA200Z
Taiwan Semiconductor
0
0.25
0.5
0.75
1
1.25
1.5
0 25 50 75 100 125 150 175
PD, MAXIMUM POWER DISSIPATION
(WATTS)
AMBIENT TEMPERATURE(℃)
FIG. 1 POWER TEMPERATURE DERATING CURVE
1
10
100
1000
110100
Zz, DYNAMIC IMPEDANCE (Ω)
Iz, ZENER CURRENT(mA)
FIG.4 EFFECT OF ZENER VOLTAGE
ON ZENER IMPEDANCE
Iz(rms)=0.1 Iz(dc)
f=1KHz
Iz = 1mA
5 mA
20mA
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
IF, FORWARD CURRENT (mA)
VF, FORWARD VOLTAGE (V)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
MINIMUM
MAXIMUM
70°C
150°C
25°C
0°C
1
10
100
1000
0 1 10 100
Zz, DYNAMIC IMPEDANCE (Ω)
Iz, ZENER CURRENT (mA)
FIG.3 EFFECT OF ZENER CURRENT
ON ZENER IMPEDANCE
Iz(rms)=0.1 Iz(dc)
f=1KHz
47V
27V
0.8V
0.001
0.01
0.1
1
10
100
1000
10000
3456789101112131415
IR, LEAKAGE CURRENT(μA)
Vz, NOMINAL ZENER VOLTAGE(V)
FIG.5 TYPICAL LEAKAGE CURRENT
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
125°C
25°C
Document Number: DS_D1409041 Version: N15
1SMA4737 - 1SMA200Z
Taiwan Semiconductor
10
100
1000
1 10 100
C, CAPACITANCE(pF)
Vz, FORWARD VOLTAGE (V)
FIG.6 TYPICAL CAPACITANCE versus Vz
50% OF BREAKDOWN
0V BIAS
1.0V BIAS
-4
-2
0
2
4
6
8
10
12
23456789101112
θVz, TEMPERATURE COEFFICIENT
(mV/°C)
Vz, ZENER VOLTAGE(V)
FIG. 7 TEMPERATURE COEFFICIENTS
a-RANGE FOR UNITS TO 12 VOLTS
RANGE Vz@ IZT
1
10
100
10 100
θVz, TEMPERATURE COEFFICIENT
(mV/℃)
Vz, ZENER VOLTAGE(V)
FIG.8 TEMPERATURE COEFFICIENTS
RANGE Vz@ IZT
b-RANGE FOR UNITS 12 TO 100 VOLTS
-4
-2
0
2
4
6
33.544.555.566.577.58
θVz, TEMPERATURE COEFFICIENT
(mV/℃)
Vz, ZENER VOLTAGE(V)
FIG. 9 EFFECT OF ZENER CURRENT
NOTE:BELOW 3 VOLTAGE ABOVE a
VOLTS CHANGES IN ZENER CURRENT
NOT AFFECT TEMPERATURE
Vz@ IZT
0.01mA
1 mA
20mA
1
10
100
0.01 0.1 1 10 100 1000
PPK, PEAK SURGE POWER WATTS
PW, PULSE WIDTH (ms)
FIG.10 MAXIMUM SURGE POWER
20% DUTY CYCLE
11V-91V NON-REPETITIVE
10% DUTY CYCLE
5% DUTY CYCLE
0.8V-10V NON-REPETITIVE
RECTANGULAR WAVEFORM
TA=25°C PRIOR TO INITIAL PULSE
Min Max Min Max
A 1.27 1.58 0.050 0.062
B 4.06 4.60 0.160 0.181
C 2.29 2.83 0.090 0.111
D 1.99 2.50 0.078 0.098
E 0.90 1.41 0.035 0.056
F 4.95 5.33 0.195 0.210
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Device Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1409041 Version: N15
E5.45
MARKING DIAGRAM
1SMA4737 - 1SMA200Z
Taiwan Semiconductor
1.68
B1.52
C3.93
0.215
D2.41
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
SUGG ESTED PAD LAYOUT
Symbol Unit (mm)
DO-214AC (SMA)
Unit (inch)
0.066
0.060
0.155
0.095
A
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1409041 Version: N15
1SMA4737 - 1SMA200Z
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
