4Mx32 5V NOR FLASH MODULE WF4M32-XXX5 FEATURES Access Times of 100, 120, 150ns 5 Volt Read and Write Packaging: Low Power CMOS * 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP (Package 402). * 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880") square (Package 509) 4.57mm (0.180") height. Designed to fit JEDEC 68 lead 0.990CQFJ footprint (Fig. 3) Sector Architecture Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. Supports reading or programming data to a sector not being erased. RESET# pin resets internal state machine to the read mode. * 32 equal size sectors of 64KBytes per each 2Mx8 chip * Any combination of sectors can be erased. Also supports full chip erase. Minimum 100,000 Write/Erase Cycles Minimum Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation, Separate Power and Ground Planes to improve noise immunity Organized as 4Mx32 * This product is subject to change without notice. Note: For programming information and waveforms refer to Flash Programming 16M5 Application Note AN0038. RY/BY# function and timings don't apply to this device. User configurable as 2x4Mx16 or 4x4Mx8 in HIP. Commercial, Industrial, and Military Temperature Ranges FIGURE 1 - PIN CONFIGURATION FOR WF4M32-XH2X5 PIN DESCRIPTION I/O0-31 A0-21 WE# CS1-4# OE# VCC VSS RESET# Top View 1 12 23 34 45 56 I/O8 RESET# I/O15 I/O24 VCC I/O31 I/O9 CS2# I/O14 I/O25 CS4# I/O30 I/O10 GND I/O13 I/O26 NC I/O29 A14 I/O11 I/O12 A7 I/O27 I/O28 A16 A10 OE# A12 A4 A1 A11 A9 A17 A21 A5 A2 Data Inputs/Outputs Address Inputs Write Enable Chip Select Output Enable Power Supply Ground Reset BLOCK DIAGRAM CS1# CS2# CS3# CS4# A21 A0 A15 WE# A13 A6 A3 A18 VCC I/O7 A8 A20 I/O23 I/O0 CS1# I/O6 I/O16 CS3# I/O22 I/O1 A19 I/O5 I/O17 GND I/O21 I/O2 I/O3 I/O4 I/O18 I/O19 I/O20 OE# WE# A0-20 RESET# 11 22 33 44 55 2M x 8 2M x 8 2M x 8 2Mx 8 2M x 8 2M x 8 2M x 8 2M x 8 I/O8-15 I/O16-23 I/O24-31 66 I/O0-7 Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 1 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 FIGURE 2 - PIN CONFIGURATION FOR WF4M32-XG2TX5 PIN DESCRIPTION I/O0-31 A0-21 WE# CS1-2# OE# VCC GND RESET# RESET# A0 A1 A2 A3 A4 A5 NC GND NC WE# A6 A7 A8 A9 A10 VCC TOP VIEW 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 Block Diagram CS1# RESET# WE# OE# A0-20 2M x 8 A20 A19 A16 CS1# OE# CS2# A17 NC NC NC A18 A15 A14 A13 A12 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 A11 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 VCC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 Data Inputs/Outputs Address Inputs Write Enable Chip Select Output Enable Power Supply Ground Reset 8 2M x 8 2M x 8 8 2M x 8 2M x 8 2M x 8 8 2M x 8 2M x 8 8 CS2# I/O0-7 I/O8-15 I/O16-23 I/O24-31 Note: CS1#& CS2# are used as bank select The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 2 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 ABSOLUTE MAXIMUM RATINGS Parameter Voltage on Any Pin Relative to VSS Storage Temperature Endurance -- write/erase cycles (Mil) CAPACITANCE Symbol Ratings VT -2.0 to +7.0 V TSTG -65 to +150 C 100,000 min. cycles 20 years Data Retention (Mil Temp) Unit TA = +25C, VIN = 0V, f = 1.0MHz Parameter OE# capacitance WE# capacitance CS# capacitance Data I/O capacitance Address input capacitance NOTES: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, inputs may overshoot VSS to -2.0 V for periods of up to 20 ns. See . Maximum DC voltage on output and I/O pins is VCC + 0.5 V. During voltage transitions, outputs may overshoot to VCC + 2.0 V for periods up to 20 ns. See . 2. Minimum DC input voltage on A9, OE#, RESET# pins is -0.5V. During voltage transitions, A9, OE#, RESET# pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See Maximum DC input voltage on A9, OE#, and RESET# is 12.5 V which may overshoot to 13.5 V for periods up to 20 ns. Symbol COE CWE CCS CI/O CAD HIP (H2) CQFP (G2T) 75 75 75 75 20 50 30 30 75 75 This parameter is guaranteed by design but not tested. Stresses greater than those listed in this section may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED DC OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage VCC 4.5 5.0 5.5 V Ground VSS 0 0 0 V Input High Voltage VIH 2.0 - VCC + 0.5 V Input Low Voltage VIL -0.5 - +0.8 V Operating Temperature (Mil) TA -55 - +125 C Operating Temperature (Ind) TA -40 - +85 C Operating Temperature (Com) TA 0 - +70 C DC CHARACTERISTICS - CMOS COMPATIBLE Parameter Input Leakage Current Output Leakage Current VCC Active Current for Read (1) VCC Active Current for Program or Erase (2) VCC Standby Current Output Low Voltage Output High Voltage Low VCC Lock-Out Voltage Symbol ILI ILOX32 ICC1 ICC2 ICC3 VOL VOH VLKO Conditions VCC = VCC MAX, VIN = GND to VCC VCC = VCC MAX, VOUT = GND to VCC CS# = VIL, OE# = VIH, f = 5MHz CS# = VIL, OE# = VIH VCC = VCC MAX, CS# = VCC 0.5V, f = 5MHz, RESET# = VCC 0.5V IOL = 12.0 mA, VCC = VCC MIN IOH = -2.5 mA, VCC = VCC MIN Min Max 10 10 215 295 2 0.45 0.85 x VCC 3.2 4.2 Unit A A mA mA mA V V V NOTES: 1. The ICC current is typically less than 8mA/MHz, with OE# at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 3 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 AC CHARACTERISTICS - WRITE/ERASE/PROGRAM OPERATIONS - WE# CONTROLLED Parameter Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Write Enable Pulse Width High Duration of Byte Programming Operation (1) Sector Erase (2) Read Recovery Time before Write VCC Setup Time Chip Programming Time Chip Erase Time (3) Output Enable Hold Time (4) RESET# Pulse Width Symbol tAVAV tELWL tWLWH tAVWL tDVWH tWHDX tWLAX tWHWL tWHWH1 tWHWH2 tGHWL tVCS tWC tCS tWP tAS tDS tDH tAH tWPH Min 100 0 45 0 45 0 45 20 -100 Max Min 120 0 50 0 50 0 50 20 -120 300 15 0 50 0 50 10 500 Min 150 0 50 0 50 0 50 20 -150 300 15 Max 300 15 0 50 44 256 tOEH tRP Max 44 256 10 500 44 256 10 500 Unit ns ns ns ns ns ns ns ns s sec s s sec sec ns ns NOTES: 1. Typical value for tWHWH1 is 7s. 2. Typical value for tWHWH2 is 1sec. 3. Typical value for Chip Erase Time is 32sec. 4. For Toggle and Data Polling. AC CHARACTERISTICS - READ-ONLY OPERATIONS Parameter Symbol Min -1000 Max -120 Max -150 Max TRC Address Access Time TAVQV TACC 100 120 150 ns Chip Select Access Time TELQV TCE 100 120 150 ns Output Enable to Output Valid TGLQV TOE 40 50 55 ns Chip Select High to Output High Z (1) TEHQZ TDF 20 30 35 ns Output Enable High to Output High Z (1) TGHQZ TDF 20 30 35 ns Output Hold from Addresses, CS# or OE# Change, whichever is First TAXQX TOH 0 0 20 TREADY 150 Unit TAVAV RESET# Low to Read Mode (1) 120 Min Read Cycle Time 1. 100 Min ns 0 20 ns 20 s Guaranteed by design, not tested. Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 4 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 AC CHARACTERISTICS FOR G2T PACKAGE - WRITE/ERASE/PROGRAM OPERATIONS, CS# CONTROLLED Parameter Write Cycle Time Write Enable Setup Time Chip Select Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Pulse Width High Duration of Byte Programming Operation (1) Sector Erase Time (2) Read Recovery Time Chip Programming Time Chip Erase Time (3) Output Enable Hold Time (4) NOTES: 1. Typical value for tWHWH1 is 7s. 2. Typical value for tWHWH2 is 1sec. 3. Typical value for Chip Erase Time is 32sec. 4. For Toggle and Data Polling. Symbol tAVAV tWLEL tELEH tAVEL tDVEH tEHDX tELAX tEHEL tWC tWS tCP tAS tDS tDH tAH tCPH tWHWH1 tWHWH2 tGHEL Min 100 0 45 0 45 0 45 20 -100 Max Min 120 0 50 0 50 0 50 20 300 15 0 10 Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 5 Max Min 150 0 50 0 50 0 50 20 300 15 0 44 256 tOEH -120 Max 300 15 0 44 256 10 -150 44 256 10 Unit ns ns ns ns ns ns ns ns s sec s sec sec ns 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 AC CHARACTERISTICS FOR H2 PACKAGE - WRITE/ERASE/PROGRAM OPERATIONS - WE# CONTROLLED Parameter Symbol Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time (1) Write Enable Pulse Width High (2) Duration of Byte Programming Operation (3) Sector Erase (4) Read Recovery Time before Write VCC Setup Time Chip Programming Time Chip Erase Time (5) Output Enable Hold Time (6) RESET# Pulse Width tAVAV tELWL tWLWH tAVWL tDVWH tWHDX tWLAX tWHWL tWHWH1 tWHWH2 tGHWL tVCS tWC tCS tWP tAS tDS tDH tAH tWPH Min 100 0 45 0 45 15 45 20 -100 Max Min 120 0 50 0 50 15 50 20 -120 300 15 0 50 0 50 10 500 Min 150 0 50 0 50 15 50 20 -150 300 15 Max 300 15 0 50 44 256 tOEH tRP Max 44 256 10 500 44 256 10 500 Unit ns ns ns ns ns ns ns ns s sec s s sec sec ns ns NOTES: 1. A21 must be held constant until WE# or CS# go high, whichever occurs first. 2. Guaranteed by design, but not tested. 3. Typical value for tWHWH1 is 7s. 4. Typical value for tWHWH2 is 1sec. 5. Typical value for Chip Erase Time is 32sec. 6. For Toggle and Data Polling. AC CHARACTERISTICS FOR H2 PACKAGE - READ-ONLY OPERATIONS Parameter Symbol Min -1000 Max -120 Max -150 Max TRC Address Access Time TAVQV TACC 100 120 150 ns Chip Select Access Time TELQV TCE 100 120 150 ns Output Enable to Output Valid TGLQV TOE 50 50 55 ns Chip Select High to Output High Z TEHQZ TDF 40 45 45 ns Output Enable High to Output High Z TGHQZ TDF 40 45 45 ns Output Hold from Addresses, CS# or OE# Change, whichever is First TAXQX TOH 0 0 20 TREADY 6 150 Unit TAVAV Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 120 Min Read Cycle Time RESET# Low to Read Mode 100 Min ns 0 20 ns 20 s 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 AC CHARACTERISTICS FOR PACKAGE - WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED Parameter Symbol Min -100 Max Min -120 Max -150 Min Max Unit Write Cycle Time tAVAV tWC 100 120 150 Write Enable Setup Time tWLEL tWS 0 0 0 ns ns Chip Select Pulse Width tELEH tCP 45 50 50 ns Address Setup Time tAVEL tAS 0 0 0 ns Data Setup Time tDVEH tDS 45 50 50 ns Data Hold Time tEHDX tDH 15 15 15 ns Address Hold Time (1) tELAX tAH 45 50 50 ns Chip Select Pulse Width High tEHEL tCPH 20 20 20 Duration of Byte Programming Operation (2) tWHWH1 Sector Erase Time (3) tWHWH2 Read Recovery Time tGHEL 300 15 0 Chip Programming Time 15 0 tOEH 10 s 15 sec 44 sec 256 sec s 44 256 Output Enable Hold Time (5) 300 0 44 Chip Erase Time (4) ns 300 256 10 10 ns NOTES: 1. A21 must be held constant until WE# or CS# go high, whichever occurs first. 2. Typical value for tWHWH1 is 7s. 3. Typical value for tWHWH2 is 1sec. 4. Typical value for Chip Erase Time is 32sec. 5. For Toggle and Data Polling. FIGURE 4 - AC TEST CIRCUIT AC Test Conditions Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level IOL Current Source (Bipolar Supply) CEFF = 50 pf Unit V ns V V NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. VZ 1.5V D.U.T. Typ VIL = 0, VIH = 3.0 5 1.5 1.5 IOH Current Source Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 7 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 PACKAGE 402 - 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H2) 35.2 (1.385) 0.38 (0.015) SQ PIN 1 IDENTIFIER SQUARE PAD ON BOTTOM 25.4 (1.0) TYP 5.7 (0.223) MAX 3.71 (0.146) 0.23 (0.009) 0.762 (0.030) 0.127 (0.005) 2.54 (0.100) TYP 15.24 (0.600) TYP 1.27 (0.050) TYP DIA 0.46 (0.018) 0.05 (0.002) DIA 25.4 (1.0) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 8 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T) 25.15 (0.990) 0.26 (0.010) SQ 4.57 (0.180) MAX 22.36 (0.880) 0.26 (0.010) SQ 0.254 (0.010) +0.05 (0.002) -0.25 (0.001) 0.254 (0.010) TYP Pin 1 R 0.127 (0.005) MIN 24.03 (0.946) 0.26 (0.010) 0.19 (0.007) 0.06 (0.002) 1 / 7 1.0 (0.040) 0.127 (0.005) DETAIL A 1.27 (0.050) TYP SEE DETAIL "A" 0.38 (0.015) 0.05 (0.002) 20.32 (0.800) TYP The Microsemi 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 9 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 ORDERING INFORMATION W F 4M32 - XXX X X 5 X MERCURY SYSTEMS NOR FLASH ORGANIZATION, 4M x 32 User configurable as 2x4M x 16 or 4x4M x 8 in HIP package ACCESS TIME (ns) PACKAGE TYPE: H2 = Ceramic Hex In line Package, HIP (Package 402) G2T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509) DEVICE GRADE: Q = Military Grade* M = Military I = Industrial C = Commercial -55C to +125C -40C to +85C 0C to +70C VPP PROGRAMMING VOLTAGE: 5=5V LEAD FINISH: Blank = Gold plated leads A = Solder dip leads * This product is processed the same as the 5962-XXXXXHXX product but all test and mechanical requirements are per the Mercury data sheet. Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 10 4340.13E-0816-ss-WF4M32-XXX5 WF4M32-XXX5 Document Title 4Mx32 5V NOR FLASH MODULE Revision History Rev # History Release Date Status Rev 7 Changes (Pg. 1, 2, 3, 6, 7, 13, 15) June 2009 Final May 2011 Final August 2011 Final June 2012 Final May 2014 Final August 2014 Final August 2016 Final 7.1 Remove G4T package option, all references to G4T and "is under devlopment, not qualified or characterized" 7.2 Remove Fig 2: G4T pin configuration 7.3 Remove preference to G4T on page 3 7.4 Remove reference to G4T on page 6 7.5 Remove reference to G4T on page 7 7.6 Remove package 502-G4T package 7.7 Add "Q" = MIL-STD-883 screened 7.8 Remove reference to G4T package Rev 8 Changes (Pg. 1-16) 8.1 Change document layout from White Electronic Designs to Microsemi Rev 9 Changes (Pg. 1, 16) 9.1 Add "NOR" to headline Rev 10 Changes (Pg. 1, 16) 10.1 Update features 10.2 Update Absolute Maximum Ratings, Capacitance, Recommended DC Operating Conditions and DC Characteristics charts 10.3 Delete subtitles from the AC Characteristics charts 10.4 Delete waveforms diagrams 10.5 Update package 402 and 509 diagrams 10.6 Update ordering information chart Rev 11 Change (Pg. 10) 11.1 Changed Device Grade "Q" description from "MIL-STD-883 Compliant" to "MIL-PRF-38534 Class H Compliant." Rev 12 Change (Pg. 10) 12.1 Changed Device Grade "Q" description from "MIL-PRF-38534 Class H Compliant" to "Military Grade." Rev 13 Changes (Pg. All) (ECN 10156) 13.1 Change document layout from Microsemi to Mercury Systems Mercury Systems reserves the right to change products or specifications without notice. (c) 2016 Mercury Systems. All rights reserved. Mercury Corp. - Memory and Storage Solutions * (602) 437-1520 * www.mrcy.com 11 4340.13E-0816-ss-WF4M32-XXX5