Rev. 2.4 Page 1 2009-11-10
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
GDS
Type
V
DS
I
D
R
DS(on)Package Pb-free
BUZ 73 A 200 V 5.5 A 0.6
Ω
PG-TO-220-3 yes
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C = 37 ˚C
I
D 5.5
A
Pulsed drain current
T
C = 25 ˚C
I
Dpuls
22
Avalanche current,limited by
T
jmax
I
AR 7
Avalanche energy,periodic limited by
T
jmax
E
AR 6.5 mJ
Avalanche energy, single pulse
I
D = 7 A,
V
DD = 50 V,
R
GS = 25
Ω
L
= 3.67 mH,
T
j = 25 ˚C
E
AS
120
Gate source voltage
V
GS
±
20 V
Power dissipation
T
C = 25 ˚C
P
tot
40
W
Operating temperature
T
j -55 ... + 150 ˚C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip case
R
thJC
≤
3.1 K/W
Thermal resistance, chip to ambient
R
thJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
BUZ 73A H
. Halogen-free according to IEC61249-2-21
BUZ 73A H
Rev. 2.4 Page 2 2009-11-10
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 25 ˚C
V
(BR)DSS
200 --
V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th)
2.1 3 4
Zero gate voltage drain current
V
DS = 200 V,
V
GS = 0 V,
T
j = 25 ˚C
V
DS = 200 V,
V
GS = 0 V,
T
j = 125 ˚C
I
DSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS
- 10 100
nA
Drain-Source on-resistance
V
GS = 10 V,
I
D = 4.5 A
R
DS(on)
- 0.5 0.6
Ω
BUZ 73A H
Rev. 2.4 Page 3 2009-11-10
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
≥
2 *
I
D *
R
DS(on)max,
I
D = 4.5 A
g
fs
3 4.2 -
S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss
- 400 530
pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss
- 85 130
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss
- 45 70
Turn-on delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 3 A
R
GS = 50
Ω
t
d(on)
- 10 15
ns
Rise time
V
DD = 30 V,
V
GS = 10 V,
I
D = 3 A
R
GS = 50
Ω
t
r
- 40 60
Turn-off delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 3 A
R
GS = 50
Ω
t
d(off)
- 55 75
Fall time
V
DD = 30 V,
V
GS = 10 V,
I
D = 3 A
R
GS = 50
Ω
t
f
- 30 40
BUZ 73A H
Rev. 2.4 Page 4 2009-11-10
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
C = 25 ˚C
I
S-- 5.5
A
Inverse diode direct current,pulsed
T
C = 25 ˚C
I
SM
-- 22
Inverse diode forward voltage
V
GS = 0 V,
I
F = 14 A
V
SD
- 1.3 1.7
V
Reverse recovery time
V
R = 100 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
t
rr
- 200 -
ns
Reverse recovery charge
V
R = 100 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
Q
rr
- 0.6 -
µC
BUZ 73A H
Rev. 2.4 Page 5 2009-11-10
Drain current
I
D =
ƒ
(
T
C)
parameter:
V
GS
≥
10 V
020 40 60 80 100 120 ˚C 160
T
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
A
6.0
I
D
Power dissipation
P
tot =
ƒ
(
T
C)
020 40 60 80 100 120 ˚C 160
T
C
0
5
10
15
20
25
30
35
W
45
P
tot
Safe operating area
I
D =
ƒ
(
V
DS)
parameter:
D
= 0.01
, T
C = 25˚C
-1
10
0
10
1
10
2
10
A
I
D
10 0 10 1 10 2 V
V
DS
R
DS(on) =
V
DS /
I
D
DC
10 ms
1 ms
100 µs
t
p = 36.0µs
Transient thermal impedance
Z
th JC =
ƒ
(
t
p)
parameter:
D = t
p /
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
BUZ 73A H
Rev. 2.4 Page 6 2009-11-10
Typ. output characteristics
I
D =
ƒ(
V
DS)
parameter:
t
p = 80 µs
0246810 12 V16
V
DS
0
1
2
3
4
5
6
7
8
9
10
11
A
13
I
D
V
GS [V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
P
tot = 40W
l 20.0
Typ. drain-source on-resistance
R
DS (on) =
ƒ(
I
D)
parameter:
V
GS
02468A11
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ω
1.8
R
DS (on)
V
GS [V] =
a
4.0
V
GS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics
I
D =
f
(
V
GS)
parameter:
t
p = 80 µs
V
DS
≥
2 x
I
D x
R
DS(on)max
012345678V10
V
GS
0
1
2
3
4
5
6
7
8
9
10
11
A
13
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
V
DS
≥
2 x
I
D
x R
DS(on)max
02468A12
I
D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S
6.0
g
fs
BUZ 73A H
Rev. 2.4 Page 7 2009-11-10
Gate threshold voltage
V
GS (th) =
ƒ
(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60 -20 20 60 100 ˚C 160
T
j
2%
typ
98%
Drain-source on-resistance
R
DS (on) =
ƒ
(
T
j)
parameter:
I
D = 4.5 A,
V
GS = 10 V
-60 -20 20 60 100 ˚C 160
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Ω
1.9
R
DS (on)
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS = 0V,
f
= 1MHz
0510 15 20 25 30 V40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F =
ƒ
(
V
SD)
parameter:
T
j
, t
p = 80 µs
-1
10
0
10
1
10
2
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 150 ˚C typ
T
j = 150 ˚C (98%)
BUZ 73A H
Rev. 2.4 Page 8 2009-11-10
Avalanche energy
E
AS =
ƒ
(
T
j)
parameter:
I
D = 7 A,
V
DD = 50 V
R
GS = 25
Ω
,
L
= 3.67 mH
20 40 60 80 100 120 ˚C 160
T
j
0
10
20
30
40
50
60
70
80
90
100
110
mJ
130
E
AS
Typ. gate charge
V
GS =
ƒ
(
Q
Gate)
parameter:
I
D puls = 14 A
04812 16 20 24 28 32 nC 38
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS =
ƒ
(
T
j)
-60 -20 20 60 100 ˚C 160
T
j
180
185
190
195
200
205
210
215
220
225
230
V
240
V
(BR)DSS
BUZ 73A H
Package Drawing: TO220-3
Rev. 2.4
Page 9
2009-11-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
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on the types in question, please contact the nearest Infineon Technologies Office.
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reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.4
Page 10
2009-11-10