CDIL cue SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors Marking PACKAGE OUTLINE DETAILS CMBT2907 = 2B ALL DIMENSIONS IN mm CMBT2907A = 2F 3.0 2.8 0.48 0.38 T 3 Pin configuration | (1= BASE 2.6 7 2= EMITTER 2.4 | 3 = COLLECTOR : 1 2 | | 3 Lt 02 1 0.89 - 0.60 2.00 0.40 1.80 2 ABSOLUTE MAXIMUM RATINGS CMBT2907__ CMBT2907A Collector-base voltage (open emitter) ~-VcBO max. 60 60 v Collector-emitter voltage (open base) -VCEO max. 40 60 v Emitterbase voltage (open collector) -VEBO max. 5,0 Vv Collector current (d.c.) -Ic max. 600 mA Total power dissipation up to Tamb = 25C Pitot max. 250 mW Junction temperature T max. 150 C D.C. current gain -Ic = 500mA; -Vcg = 10V hpe > 30 50 Turn-off switching time Icon = 150 mA; -Igon = IBoff = 15 MA to < 100 ns Transition frequency at f = 100 MHz Ic = 50 mA; -VcE = 20 V fr > 200 MHz 101CDIL CMBT2907A RATINGS (at Ta = 25C unless otherwise specified) Limiting values CMBT2907__ CMBT2907A Collector-base voltage (open emitter) -VcBo max. 60 60 Vv Collector-emitter voltage (gpen base) -VcCEO max. 40 60 Vv Emitter-base voltage (open collector) -VEBO max. 5,0 Vv Collector current (d.c.) -Ic max. 600 mA Power dissipation up to Tamb = 25 C Prot max. 250 mW Storage temperature range Tstg -55 to +150 C Junction temperature : Tj max, 150 C THERMAL RESISTANCE From junction to ambient in free air Rth j-a = 500 K/W CHARACTERISTICS Tj ~ 25 C unless otherwise specified Collector cut-off current CMBT2907_ CMBT2907A Tg = 0; -Vcop = 50V -ICBo < 20 10 nA Ig = 0; -Vcp = SOV; T; = 125C -Icgo < 20 10 pA Vep = 0,5 V; -VcE = 30 V -ICEXx < 50 nA Base current with reverse biased emitter junction VeB = 3V; -VcE = 30V -IBEX < 50 nA Saturation voltages -Ic = 150 mA; -1gp = 15 mA -VcEsat < 0,4 Vv -VBEsat < 1,3 Vv -Ic = 500 mA; -1g = 50 mA -VCEsat < 1,6 Vv -VBEsat < 2,6 Vv Collector-base breakdown voltage Open emitter; ~[c = 10 A; IE = 0 -V(BR)CBO > 60 Vv Collector-emitter breakdown voltage Open base; -Ic = 10 mA; lp; 0 -V(BR)CEO > 40 60 Vv Emitter-base breakdown voltage Open collector; -Ig = 10 pA; Ic = 0 -V(BR)EBO > 5,0 Vv CMBT2907. CMBT2907A D.C. current gain -Ic = 0,1 mA; -VcR = 10 V hFE > 35 75 -Ic = 1 mA; -VcgR = 10 V hfe > 50 100 -Ic = 10 mA; -Vcg = 10 V hFE > 75 100 ~Ic = 150mA; --Vcg = 10V hg 100 to 300 -Ic = 500mA; -Vcg = 10V hee > 30 50 102EDIL CMBT2907 CMBT2907A Transition frequency at f = 100 MHz -Ic = 50 mA; - Veg = 20 V; Tamb = 25 C fr > 200 MHz Output capacitance at f = 1 MHz Ig = Ie = 0; -Vcop = 10V Co < 8,0 pF Input capacitance at f = 1 MHz Ic =I, =0;-VEB~2V Cj < 30 pF Switching times (between 10% and 90% levels) Turn-on time when switched to -Ic = 150mA; -lg = 15 mA; Vcc = 30V delay time ig < 10. ns rise time tr < 40 ns turn on time (tq + tr) ton < 45 ns Turnoff time when switched from ~-Ic = 150 mA; -lIp = 15 mA; Vcc = 6 V to cut-off with + Igy = 15 mA Storage time ts < 80 ns fall time te < 30 ns turn-off time (ts + ts tof < 100 ns ak 2 .e