kg SGS-THOMSO yf See crones DESCRIPTION The 2N5179 is a silicon planar epitaxial NPN tran- sistor in Jedec TO-72 metal case, intended for low- noise tuned-amplifier and converter applications up to 500 MHz. 2N5179 VHF/UHF AMPLIFIER INTERNAL SCHEMATIC DIAGRAM c B NPN Ss ouuy E ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VcBo Collector-base Voltage (le = 0) 20 Vv VcEO Collector-ermitter Voltage (Ip = 0) 12 Vv VEBo Emitter-base Voltage (Ic = 0) 2.5 Vv lo Collector Current 50 mA Prot Total Power Dissipation at Tamp < 25 C 200 mw at Tcase $ 25 C 300 mW Tstg, Tj | Storage and Junction Temperature 65 to 200 C October 1988 1/42N5179 THERMAL DATA Rth j-case | Thermal Resistance Junction-case Max 583 C/W Rth j-amb Thermal Resistance Junction-ambient Max 875 CAN ELECTRICAL CHARACTERISTICS (Tamb = 25 CC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit loBo Collector Cutoff Current Vop =15V 20 nA (le =0) Vop = 15V Tamb = 150 C 1 pA ViBR) cso | Collector-base lo =1HA 20 Vv Breakdown Voltage (le =0) Veceasus) | Collector-emitter lc =3mA 12 Vv Sustaining Voltage (Ig =0) Vi BR)EBO *| Emitter-base le = 10 pA 2.5 Vv Breakdown Voltage (Ic =0) Voce (sat) | Collector-emitter lo =10 mA lp =1 mA 0.4 Vv Saturation Voltage Vee(sat) | Base-emitter lc =10 mA Ip =1mA 1 Vv Saturation Voltage here DC Current Gain lc=3mA Vce=1V 25 70 250 Hte Small Signal Current Gain lc =2mA Voce =6V f = 1 kHz 25 90 300 fr Transition Frequency lc =5mA Voce =6V f = 100 MHz 0.9 1.4 2 GHz Cre Reverse Capacitance lo =0 Voce =6V f = 1 MHz 0.7 1 pF NF Noise Figure lo =1.5 mA Voce =6V f=200 MHz Rg =125Q0 3 4.5 dB Gpe Power Gain lo =5 mA Voce =12V (neutralized) f=200 MHz Rg =50 15 21 dB Po Oscillator Power Output lo =12 mA Vop =10V f = 500 MHz 20 mW lob 'Co'e Feedback Time lo =2mA Vop =6V Constant f = 31.9 MHz 3 7 14 ps 2l4 (7 SGS-THOMSON vf MICROELECTRONICS2N5179 TO-72 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 12.7 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 1.16 0.045 L 45 45 0016198 hy SGS-THOMSON 3/4 MICROELECTRONICS2N5179 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 &r